Tool and method of developing
A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.
1. A method of developing, comprising:
rotating a wafer at a first rotating speed;
dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution, wherein the path ranges from a center of the wafer to a point between the center of the wafer and an edge of the wafer, and a distance between the center of the wafer and the point is shorter than a radius of the wafer;
rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly; and
dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer,
wherein the second rotating speed is less than the first rotating speed.
2. The method of claim 1 , wherein the path is a linear path corresponds to the radius of the wafer.
3. The method of claim 2 , wherein the first nozzle is reciprocated between the center of the wafer and two-thirds of the radius of the wafer.
4. The method of claim 3 , wherein the operation of dispensing the rinse solution is performed by the second nozzle moving back and forth along the linear path during dispensing the rinse solution.
5. The method of claim 1 , after the operation of dispensing the rinse solution, further comprising:
moving the first nozzle and the second nozzle to a home position, wherein the home position is not above the wafer; and
rotating the wafer at a third rotating speed to spread the rinse solution onto the wafer uniformly and remove the developer solution onto the wafer.
6. The method of claim 5 , wherein the third rotating speed is greater than the first rotating speed.
7. The method of claim 1 , wherein the first rotating speed ranges from about 500 rpm to about 1000 rpm.
8. The method of claim 1 , wherein the rinse solution is deionized water.
9. A method of developing, comprising:
rotating a wafer at a first rotating speed;
dispensing a developer solution onto the wafer at the first rotating speed, wherein the developer solution is dispensed back and forth along a linear path during dispensing the developer solution, wherein the linear path ranges from a center of the wafer to a point between the center of the wafer and an edge of the wafer, and a distance between the center of the wafer and the point is shorter than a radius of the wafer;
rotating the wafer at a second rotating speed for a time period to spread the developer solution onto the wafer uniformly; and
dispensing a rinse solution onto the wafer at the second rotating speed,
wherein the second rotating speed is less than the first rotating speed.
10. The method of claim 9 , wherein the linear path corresponds to a radius of the wafer, and dispensing the developer solution is reciprocated between the center of the wafer and two-thirds of the radius of the wafer.
11. The method of claim 9 , wherein the operation of dispensing the developer solution is performed by a first nozzle moving back and forth along the linear path.
12. The method of claim 11 , wherein the operation of dispensing the rinse solution is performed by a second nozzle moving back and forth along the linear path.
13. The method of claim 12 , after the operation of dispensing the rinse solution, further comprising:
moving the first nozzle and the second nozzle to a home position, wherein the home position is not above the wafer; and
rotating the wafer at a third rotating speed to spread the rinse solution onto the wafer uniformly and remove the developer solution onto the wafer.
14. The method of claim 13 , wherein the third rotating speed is greater than the first rotating speed.
15. The method of claim 14 , wherein the second rotating speed is less than the first rotating speed.
16. The method of claim 13 , wherein the third rotating speed ranges from about 1500 rpm to about 2000 rpm.
17. The method of claim 12 , wherein dispensing the developer solution and the rinse solution is performed by a third nozzle.
18. The method of claim 9 , wherein the first rotating speed ranges from about 500 rpm to about 1000 rpm.
19. The method of claim 9 , wherein the second rotating speed ranges from about 600 rpm to about 1000 rpm.