Method and system for adaptively scanning a sample during electron beam inspection
A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.
1. A system comprising:
an inspection sub-system including:
an electron beam source configured to generate one or more electron beams,
a sample stage configured to secure the sample;
a set of electron-optic elements configured to direct the one or more electron beams onto the sample; and
a detector assembly including at least an electron collector, the detector configured to detect electrons from the surface of the sample; and
a controller communicatively coupled to one or more portions of the inspection sub-system, the controller including one or more processors configured to execute program instructions configured to cause the one or more processors to adjust one or more parameters of the inspection sub-system, in response to one or more assessed characteristics of one or more portions of an area for inspection.
2. The system of claim 1 , wherein the inspection sub-system is configured to inspect a surface of one or more wafers.
3. The system of claim 1 , wherein the electron beam source includes one or more electron guns.
4. The system of claim 1 , wherein the sample stage comprises:
at least one of a linear sample stage and a rotational sample stage.
5. The system of claim 1 , wherein the one or more parameters of the inspection sub-system adjusted by the controller comprise:
one or more stage parameters.
6. The system of claim 5 , wherein the one or more stage parameters comprise:
at least one of stage scanning speed or sample bias voltage.
7. The system of claim 1 , wherein the one or more parameters of the inspection sub-system adjusted by the controller comprise:
one or more electron-optic parameters.
8. The system of claim 7 , wherein the one or more electron-optics parameters comprise:
one or more electron-optic focus parameters.
9. The system of claim 1 , wherein the one or more parameters of the inspection sub-system adjusted by the controller comprise:
one or more electron beam scanning parameters.
10. The system of claim 9 , wherein the one or more electron beam scanning parameters comprise:
at least one of scanning pattern, scan-line density, scan-line spacing, electron beam scanning speed, scanning range or field of scanning.
11. The system of claim 1 , wherein the one or more parameters of the inspection sub-system adjusted by the controller comprise:
one or more image forming parameters.
12. The system of claim 11 , wherein the one or more image forming parameters comprise:
at least one of extraction voltage, extraction field strength for secondary electrons or electron landing energy.
13. The system of claim 1 , wherein the one or more parameters of the inspection sub-system adjusted by the controller comprise:
one or more digitization parameters.
14. The system of claim 13 , wherein the one or more digitization parameters comprise:
at least one of digitization rate or pixel data rate.
15. The system of claim 1 , wherein the one or more characteristics of one or more portions of an area for inspection comprise:
a complexity metric of one or more patterns within the one or more portions of the area for inspection.
16. The system of claim 1 , wherein the one or more assessed characteristics of one or more portions of an area for inspection comprise:
a structural characteristic of one or more patterns within the one or more portions of the area for inspection.
17. The system of claim 1 , wherein the one or more assessed characteristics of one or more portions of an area for inspection comprise:
a defect density within the one or more portions of the area for inspection.
18. The system of claim 1 , wherein the one or more assessed characteristics of one or more portions of an area for inspection comprise:
a defect size within the one or more portions of the area for inspection.
19. The system of claim 1 , wherein the one or more assessed characteristics of one or more portions of an area for inspection comprise:
a defect type within the one or more portions of the area for inspection.
20. The system of claim 1 , wherein the controller is configured to assess the one or more characteristics of one or more portions of an area for inspection during an inspection recipe setup.
21. The system of claim 1 , wherein the controller is configured to assess the one or more characteristics of one or more portions of an area for inspection during a setup inspection run prior to inspection.
22. The system of claim 1 , wherein the controller is configured to assess the one or more characteristics of one or more portions of an area for inspection during inspection runtime.
23. The system of claim 1 , wherein the controller is communicatively coupled to the electron source and is configured to control one or more electron source parameters.
24. The system of claim 1 , wherein the controller is communicatively coupled to the sample stage and is configured to control one or more stage parameters of the sample disposed on the sample stage.
25. The system of claim 1 , wherein the controller is communicatively coupled to one or more electron-optic elements of the set of electron-optic elements and is configured to control one or more electron-optic parameters.
26. The system of claim 1 , wherein the set of electron-optic elements includes one or more electron optic lenses for focusing the one or more electron beams onto the surface of the sample.
27. The system of claim 26 , wherein the controller is communicatively coupled to the one or more electron-optic lenses of the set of electron-optic elements and is configured to control one or more electron-optic focus parameters.
28. The system of claim 1 , wherein the set of electron-optic elements includes one or more electron beam scanning elements configured to scan the one or more electron beams across the surface of the sample.
29. The system of claim 28 , wherein the controller is communicatively coupled to the one or more electron beam scanning elements and is configured to control one or more electron beam scanning parameters with the electron beam scanning coils.
30. The system of claim 1 , wherein the controller is communicatively coupled to a portion of the detector assembly.
31. The system of claim 30 , wherein the controller is communicatively coupled to the electron collector of the detector assembly and is configured to control one or more image forming parameters.
32. The system of claim 1 , wherein the controller is communicatively coupled to the detector assembly and is configured to control at least one digitization parameter of the detector assembly.
33. The system of claim 1 , wherein the detector assembly further includes a scintillating element and a photomultiplier tube.
34. The system of claim 33 , wherein the detector assembly further includes a light detector.
35. The system of claim 1 , wherein the controller is configured to elongate one or more pixels along a selected direction.
36. A method comprising:
directing one or more electron beams onto a surface of a sample;
assessing one or more characteristics of one or more portions of an area for inspection; and
performing an inline adjustment of one or more parameters associated with the one or more electron beams directed onto the surface of the sample based on the one or more assessed characteristics of the of one or more portions of the area for inspection.