IP Library Granted Patent US 9,735,295
Granted Patent B2
US 9,735,295 · App. 15/027,184 · Granted Aug 15, 2017

Electrode having excellent light transmittance, method for manufacturing same, and electronic element including same

Inventors: Kwang Hee Lee (Gwangju, KR); Su Hyun Jung (Gwangju, KR); Hong Kyu Kang (Gwangju, KR)
Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
H01L31/022466H01L31/1884H01L51/0021H01L51/442H01L51/5203H01L51/5215H01L51/5234H01L51/56G06F2203/04103H01L21/28061H01L21/32051H01L33/44H01L51/5281Y02E10/549
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Quick Facts
Patent No.
US 9,735,295
App. No.
15/027,184
Granted
Aug 15, 2017
Kind
B2
Abstract

An electronic device with an electrode having a superior light transmittance and including a substrate, an amine group-containing compound layer formed on the substrate, and a metal layer formed on the amine group-containing compound layer is provided. In accordance with the present invention, the electrode is easily manufactured when a solution process is used, has performances of a light transmittance, a sheet resistance, and flexibility higher than those of a typical ITO transparent electrode, and a manufacturing cost of the electrode may be reduced.

Claims (39)

1. An electrode having a light transmittance, the electrode comprising:

a substrate;

an amine group-containing compound layer contacted with the substrate; and

a metal layer contacted with the amine group-containing compound layer,

wherein the amine group-containing compound layer is disposed between the substrate and the metal layer.

2. The electrode of claim 1 , further comprising:

an anti-reflection layer contacted with the metal layer,

wherein the amine group-containing compound layer, the metal layer, and the anti-reflection layer are laminated in sequence on the substrate.

3. An electrode having a light transmittance, the electrode comprising:

a substrate;

a metal oxide layer contacted with the substrate;

an amine group-containing compound layer contacted with the metal oxide layer; and

a metal layer contacted with the amine group-containing compound layer,

wherein the metal oxide layer, the amine group-containing compound layer, and the metal layer are laminated in sequence on the substrate.

4. The electrode of claim 3 , further comprising:

an anti-reflection layer formed on the metal layer,

wherein the metal oxide layer, the amine group-containing compound layer, the metal layer, and anti-reflection layer are laminated in sequence on the substrate.

5. The electrode of claim 1 , wherein the substrate is

an inorganic substrate selected from glass, quartz, Al.sub.2O.sub.3, SiC, Si, GaAs, and InP, or

an organic substrate selected from Kepton foil, polyimide (PI), polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polycarbonate (PC), cellulose triacetate (CTA), and cellulose acetate propionate (CAP).

6. The electrode of claim 1 , wherein the amine group-containing compound layer is alkylamine available for having substituents, cycloalkylamine available for having substituents, arylamine available for having substituents, polymer containing amine groups derived from these amines, or a combination of two or more polymers containing the amine groups.

7. The electrode of claim 1 , wherein a metal of the metal layer is selected from Ag, Cu, Au, Al, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Tl, Pb, Bi, Ga, Ge, Sb, Ac, Th, and a combination thereof.

8. The electrode of claim 2 , wherein the anti-reflection layer is made of one selected from polyaniline, polythiophene, polyethylenedioxythiophene (PEDOT), polyimide, polystyrenesulfonate (PSS), polypyrrole, polyacetylene, poly(p-phenylene), poly(p-phenylene sulfide), poly(p-phenylene vinylene), polythiophene poly(thienylene vinylene), poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS), and a combination thereof.

9. The electrode of claim 2 , wherein the anti-reflection layer is made of one selected from poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-di-octylfluorene) (PFN), poly(9,9-bis(4′-sulfonatobutyl)(fluorine-alt-co-1,4-phenylene (PFP), poly(styrenesulfonic acid) (PSS), poly(p-quaterphenylene-2,2′-dicarboxylic acid), diphenyl fluorine derivative (DPF), tetrakis(1-imidazolyl)borate, Bim4-), and a combination thereof.

10. The electrode according to claim 3 ,

wherein said transparent electrode further comprises an anti-reflection layer contacted with the metal layer,

wherein the metal oxide layer, the amine group-containing compound layer, the metal layer, and the anti-reflection layer are laminated in sequence on the substrate.

11. A method of manufacturing a transparent electrode having a multilayer structure, the method comprising:

forming an amine group-containing compound layer on a substrate; and

forming a metal layer on the amine group-containing compound layer,

wherein

the formed amine group-containing compound layer is contacted with the substrate, and

the formed amine group-containing compound layer and the formed metal layer are laminated in sequence on the substrate.

12. The method of claim 11 , further comprising:

forming an anti-reflection layer on the metal layer,

wherein the formed amine group-containing compound layer, the formed metal layer, and the formed anti-reflection layer are laminated in sequence on the substrate.

13. The method of claim 11 , wherein the amine group-containing compound layer is formed through spin-coating, roll coating, spray coating, flow coating, ink-jet printing, nozzle printing, dip coating, electrophoretic deposition, tape casting, screen printing, pad printing, doctor blade coating, gravure printing, gravure offset printing, Langmuir-Blodgett process, sputter deposition, electron beam evaporation, thermal evaporation, or chemical vapor deposition.

14. The method of claim 11 , wherein the metal layer is formed through an applying method by sputter deposition, electron beam evaporation, thermal evaporation, chemical vapor deposition, or a solution process.

15. The method of claim 12 , wherein the anti-reflection layer is formed through spin-coating, roll coating, spray coating, flow coating, ink-jet printing, nozzle printing, dip coating, electrophoretic deposition, tape casting, screen printing, pad printing, doctor blade coating, gravure printing, gravure offset printing, Langmuir-Blodgett process, sputter deposition, electron beam evaporation, thermal evaporation, or chemical vapor deposition.

Assignments (4)
LICENSE AGREEMENT Recorded Mar 19, 2023
From: ONES (ORGANIC NANO ELECTRONIC SYSTEM) CO., LTD
To: MSWAY CO., LTD.
Reel/Frame 063117/0504 →
LICENSE AGREEMENT Recorded Mar 18, 2023
From: ONES (ORGANIC NANO ELECTRONIC SYSTEM) CO., LTD
To: MSWAY CO., LTD.
Reel/Frame 063117/0406 →
CHANGE OF NAME Recorded Aug 8, 2017
From: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
To: ONES (ORGANIC NANO ELECTRONIC SYSTEM) CO., LTD
Reel/Frame 043230/0284 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2016
From: LEE, KWANG HEE; JUNG, SU HYUN; KANG, HONG KYU
To: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 038190/0337 →
Priority Claims (1)
KR 10-2013-0118543 · Oct 4, 2013 · national
Continuity (1)
Related Publication 20160233357A1 · Aug 11, 2016