Spin orbit and spin transfer torque-based spintronics devices

1. A spintronics device comprising:

a ferromagnet layer, 0.1 to 1000 nm in thickness, having a first surface and a second surface opposed to each other;

a metal layer covering the first surface of the ferromagnet layer;

a spacer layer covering the second surface of the ferromagnet layer;

a capping layer, 0.1 to 1000 nm in thickness, deposited on the spacer layer so that the spacer layer is disposed between the capping layer and the ferromagnet layer; and

a dielectric layer covering either the metal layer or the spacer layer, wherein the magnetization direction of the ferromagnet layer is switchable.

2. The spintronics device of claim 1 , wherein the ferromagnet layer is made of Co, Fe, Ni, NiFe, CoFe, CoFeB, CoCrPt, FePt, FeGd, GdFeCo, CoGd, [XY] n or [XZ] n , in which each of X and Y is independently Co, Fe, Ni, NiFe, CoFe, CoFeB, CoCrPt, FePt, FeGd, GdFeCo, or CoGd, Z is Pt, Ta, Pd, Jr, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, TI, Po, At, or a combination thereof, and n is an integer greater than 0.

3. The spintronics device of claim 2 , wherein the metal layer is made of Pt, Ta, Pd, Jr, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, Tl, Po, At, or a combination thereof and the dielectric layer is made of ionic liquid, glass, silicon, magnesia, sapphire, or polymer.

4. The spintronics device of claim 3 , wherein the spacer layer is made of a metal, an oxide, or a nitride.

5. The spintronics device of claim 4 , further comprising:

a plurality of metal-ferromagnet bilayers deposited on the ferromagnet layer so that the device has multiple stacked metal-ferromagnet bilayers or a plurality of metal-ferromagnet-spacer trilayers deposited on the spacer layer so that the device has multiple stacked metal-ferromagnet-spacer trilayers.

6. The spintronics device of claim 4 , wherein the spacer layer is made of Pt,Ta, Pd, Ir, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, Tl, Po, At, or a combination thereof.

7. The spintronics device of claim 1 , wherein the metal layer is made of Pt, Ta, Pd, Jr, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, Tl, Po, At, or a combination thereof.

8. The spintronics device of claim 1 , wherein each of the spacer layer and the capping layer is independently made of an oxide or a nitride.

9. The spintronics device of claim 8 , wherein the oxide is silicon oxide, magnesium oxide, or aluminum oxide; and the nitride is boron nitride or silicon nitride.

10. A method of using the spintronics device of claim 1 , comprising:

providing an in-plane current through the metal layer to exert spin orbit torque on the ferromagnet layer,

whereby the magnetization direction of the ferromagnet layer is changed.

11. A spintronics device comprising:

a ferromagnet layer, 0.1 to 1000 nm in thickness, having a first surface and a second surface opposed to each other, the ferromagnet layer being made of Co, Fe, Ni, NiFe, CoFe, CoFeB, CoCrPt, FePt, FeGd, GdFeCo, CoGd, [XY] n or [XZ] n , in which each of X and Y is independently Co, Fe, Ni, NiFe, CoFe, CoFeB, CoCrPt, FePt, FeGd, GdFeCo, or CoGd, Z is Pt, Ta, Pd, Ir, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, TI, Po, At, or a combination thereof, and n is an integer greater than 0;

a metal layer covering the first surface of the ferromagnet layer, the metal layer being made of Pt, Ta, Pd, Ir, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, Tl, Po, At, or a combination thereof;

a spacer layer covering the second surface of the ferromagnet layer, the spacer layer being made of a metal, an oxide, or a nitride;

a dielectric layer covering either the metal layer or the spacer layer, the dielectric layer being made of ionic liquid, glass, silicon, magnesia, sapphire, or polymer; and

a first addressing line deposited on the surface of the metal layer, the first addressing line being made of Pt, Ta, Pd, Ir, Hf, Pb, W, Cu, Al, Bi, Au, Ru, Rh, Mo, Te, Se, Sb, La, Sr, Ti, Y, Zr, Nb, Tc, Cd, In, Re, Os, Hg, Tl, Po, At, or a combination thereof, wherein the magnetization direction of the ferromagnet layer is switchable and the metal layer is a second addressing line orthogonal to the first addressing line.