Apparatus and method for generation of high harmonics from silicon
A method and apparatus is disclosed for generating tunable attosecond-scale radiation pulses, with a frequency in range of mid-infrared to ultra-violet, from a silicon medium. The invention utilizes an intense laser pulse to drive a high harmonic generation (HHG) process in a silicon medium and a weak secondary field to control the HHG process. The weak secondary field has a frequency equal to the second harmonic of the intense laser pulse. The spatial, temporal and spectral properties of the HHG process and the emitted harmonic beam are tuned by adjusting the relative delay between the two fields and the intensity of the weak secondary field.
1. A method comprising:
applying a driving electromagnetic field to a silicon medium to thereby cause the silicon medium to emit a harmonic beam; and
applying a control field to the driving electromagnetic field in an interaction region of the silicon medium to thereby control one or more properties of the harmonic beam,
wherein the driving electromagnetic field has a first frequency and the harmonic beam comprises a plurality of high-order harmonics of the first frequency,
wherein the control field has a second frequency that is a second harmonic of the first frequency, and
wherein the one or more properties of the harmonic beam consist of spectral, temporal and spatial properties.
2. The method of claim 1 , wherein the method comprises varying an intensity of the control field to modulate a spectrum of the harmonic beam.
3. The method of claim 1 , wherein the method comprises varying a relative phase between the control field and the driving electromagnetic field as a function of a harmonic order to thereby modulate an intensity of the harmonic order in the harmonic beam.
4. The method of claim 1 , wherein the control field comprises a laser field.
5. The method of claim 1 , wherein the control field comprises a DC field.
6. The method of claim 1 , wherein the control field comprises an AC field.
7. The method of claim 1 , wherein the control field comprises a pulsed electrical signal.
8. The method of claim 1 , wherein the driving electromagnetic field comprises a laser field.
9. The method of claim 1 , wherein the applied control field is an optically applied electromagnetic field.
10. The method of claim 1 , wherein the harmonic beam comprises one or more high harmonics that are in a mid-infrared to ultraviolet frequency regime.
11. The method of claim 1 , wherein a frequency comb is impressed on high harmonic radiation or on isolated ultrashort pulses generated by electron-hole recollision.
12. The method of claim 11 comprising tuning a period of the ultraviolet frequency comb by controlling one or more spectral properties of the short intent laser pulse.
13. The method of claim 11 wherein, light intensity required to produce the ultraviolet frequency comb is reduced through the use of one or more nano-antennas deposited directly on the silicon medium.
14. An apparatus comprising:
a silicon generation medium;
a driving field generator configured to apply a driving electromagnetic field to the silicon generation medium to thereby cause the silicon generation medium to emit a harmonic beam; and
a control field generator configured to apply a control field to the driving electromagnetic field in an interaction region of the silicon generation medium to thereby control one or more properties of the harmonic beam,
wherein the driving electromagnetic field has a first frequency and the harmonic beam comprises a plurality of high-order harmonics of the first frequency,
wherein the control field has a second frequency that is a second harmonic of the first frequency, and
wherein the one or more properties of the harmonic beam consist of spectral, temporal and spatial properties.
15. The apparatus of claim 14 , wherein control field generator comprises one or more internal terminals on a surface of the silicon generation medium.
16. The apparatus of claim 14 , wherein the control field generator comprises one or more external terminals.
17. The apparatus of claim 14 , wherein the control field comprises a laser field.
18. The apparatus of claim 14 , wherein the control field comprises a DC field.
19. The apparatus of claim 14 , wherein the control field comprises an AC field.
20. The apparatus of claim 14 , wherein the control field comprises a pulsed electrical signal.
21. The apparatus of claim 14 , wherein the driving electromagnetic field comprises a laser field.
22. The apparatus of claim 14 , wherein the control field is an optically applied electromagnetic field.
23. The apparatus of claim 14 , wherein the harmonic beam comprises one or more high harmonics that are in a mid-infrared to ultraviolet frequency regime.
24. The apparatus of claim 14 wherein, one or more nano-antennas are deposited directly on the silicon generation medium.