Organic light-emitting display apparatus
An organic light-emitting display apparatus is provided. The apparatus includes an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is less than that of the second semiconductor region.
1. An organic light-emitting display apparatus, comprising:
an organic light-emitting diode emitting visible light;
a driving thin film transistor driving the organic light-emitting diode and comprising a driving gate electrode, a driving semiconductor layer, a driving source electrode, and a driving drain electrode; and
a compensation thin film transistor electrically connected to the driving thin film transistor and compensating for threshold voltage of the driving thin film transistor,
the compensation thin film transistor comprising a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode,
the compensation gate electrode comprising a first gate electrode and a second gate electrode electrically connected to each other,
the compensation drain electrode electrically connected to the driving gate electrode of the driving thin film transistor, and
the compensation semiconductor layer comprising a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region being less than that of the second semiconductor region.
2. The apparatus of claim 1 , wherein a length of the first semiconductor region in a direction from the compensation source electrode to the compensation drain electrode is less than a length of the second semiconductor region in a direction from the compensation source electrode to the compensation drain electrode.
3. The apparatus of claim 1 , wherein a width of the first semiconductor region in a direction perpendicular to a direction of the compensation source electrode toward the compensation drain electrode is less than a width of the second semiconductor region in a direction perpendicular to a direction of the compensation source electrode toward the compensation drain electrode.
4. The apparatus of claim 1 , wherein the first gate electrode of the compensation gate electrode corresponds to a region of a wire, and the second gate electrode protrudes from the wire.
5. The apparatus of claim 1 , wherein an area of the first gate electrode that overlaps the first semiconductor region and corresponds to a length in a direction from the compensation source electrode to the compensation drain electrode has a smaller width than an area of the second gate electrode that overlaps the second semiconductor region and corresponds to a length in a direction from the compensation source electrode to the compensation drain electrode.
6. The apparatus of claim 5 , wherein a wire which the first gate electrode of the compensation gate electrode corresponds to is a scanning line via which a scan signal for driving the organic light-emitting diode is applied.
7. The apparatus of claim 6 , further comprising a switching thin film transistor connected to the scanning line and comprising a switching gate electrode, a switching semiconductor layer, a switching source electrode, and a switching drain electrode.
8. The apparatus of claim 1 , wherein the compensation semiconductor layer is curved such that the first semiconductor region and the second semiconductor region are not disposed side by side.
9. The apparatus of claim 1 , further comprising a first conductive member electrically connecting the driving gate electrode and the compensation drain electrode,
wherein the first conductive member extends so as to be disposed in a first contact hole which corresponds to the driving gate electrode and in a second contact hole which corresponds to the compensation drain electrode.
10. The apparatus of claim 1 , further comprising a storage capacitor which comprises a first electrode electrically connected to the compensation drain electrode and a second electrode connected to a driving voltage line.
11. The apparatus of claim 10 , wherein the first electrode of the storage capacitor is connected to the driving gate electrode.
12. The apparatus of claim 10 , wherein the second electrode comprises an opening formed in a region where the second electrode at least overlaps the first electrode.
13. The apparatus of claim 10 , wherein the second electrode is at least commonly comprised in at least two adjacent pixels selected from among the pixels.
14. The apparatus of claim 10 , wherein the driving voltage line is connected to the second electrode.
15. The apparatus of claim 1 , wherein the compensation source electrode is electrically connected to the driving drain electrode.
16. The apparatus of claim 1 , further comprising an emission control thin film transistor operating according to an emission control signal transmitted through an emission control line,
wherein the compensation source electrode is electrically connected to a pixel electrode of the organic light-emitting diode via the emission control thin film transistor.
17. The apparatus of claim 1 , further comprising an emission control thin film transistor operating according to an emission control signal transmitted through an emission control line,
wherein the driving source electrode is electrically connected to a driving voltage line via the emission control thin film transistor.
18. The apparatus of claim 1 , wherein the compensation source electrode and the compensation drain electrode are formed by doping the compensation semiconductor layer with impurities.