Method for manufacturing semiconductor device
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.
1. A method for manufacturing a semiconductor device, comprising:
forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%;
patterning the mask layer; and
performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.
2. The method according to claim 1 , wherein
a ratio of tungsten-tungsten (W—W) bond number in the mask layer is not less than 20%.
3. The method according to claim 1 , wherein
the mask layer further contains carbon, and
a ratio of tungsten-carbon (W—C) bond number in the mask layer is not more than 50%.
4. The method according to claim 1 , wherein
the mask layer further contains carbon, and
a composition ratio of the carbon in the mask layer is less than 50%.
5. The method according to claim 1 , wherein
a Young's modulus of the mask layer is not less than 170 GPa.
6. The method according to claim 1 , wherein
the layer to be etched contains silicon, and
the layer to be etched is etched using a gas containing fluorine.
7. The method according to claim 1 , wherein
the layer to be etched is a stacked body including a plurality of first layers and a plurality of second layers alternately stacked, the second layers being layers of a different type of material from the first layers.
8. The method according to claim 1 , further comprising:
forming a film containing a metal nitride provided between the layer to be etched and the mask layer.
9. A method for manufacturing a semiconductor device, comprising:
forming a mask layer on a layer to be etched, the mask layer containing tungsten and carbon, a composition ratio of the carbon being less than 50%;
patterning the mask layer; and
performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.
10. The method according to claim 9 , wherein a ratio of tungsten-tungsten (W—W) bond number in the mask layer is not less than 20%.
11. The method according to claim 9 , wherein
a ratio of tungsten-carbon (W—C) bond number in the mask layer is not more than 50%.
12. The method according to claim 9 , wherein
a Young's modulus of the mask layer is not less than 170 GPa.
13. The method according to claim 9 , wherein
the layer to be etched contains silicon, and
the layer to be etched is etched using a gas containing fluorine.
14. The method according to claim 9 , wherein
the layer to be etched is a stacked body including a plurality of first layers and a plurality of second layers alternately stacked, the second layers being layers of a different type of material from the first layers.
15. The method according to claim 9 , further comprising:
forming a film containing a metal nitride provided between the layer to be etched and the mask layer.
16. A method for manufacturing a semiconductor device, comprising:
forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, containing tungsten and carbon, or containing tungsten, boron and carbon, the mask layer having a full width at half maximum being not less than 0.5° in XRD (X-ray diffraction) peaks measured by 2θ/θ method of XRD analysis in which 2θ is between 30° and 50°;
patterning the mask layer; and
performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.
17. The method according to claim 16 , wherein
a Young's modulus of the mask layer is not less than 170 GPa.
18. The method according to claim 16 , wherein
the layer to be etched contains silicon, and
the layer to be etched is etched using a gas containing fluorine.
19. The method according to claim 16 , wherein
the layer to be etched is a stacked body including a plurality of first layers and a plurality of second layers alternately stacked, the second layers being layers of a different type of material from the first layers.
20. The method according to claim 16 , further comprising:
forming a film containing a metal nitride provided between the layer to be etched and the mask layer.