Amorphous p-type oxide for a semiconductor device
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu 2 O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu 2 O and x and y satisfy the following expressions: 0≦x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
1. A p-type oxide, wherein the p-type oxide is amorphous and is represented by the following compositional formula:
x AO. y Cu 2 O
where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu 2 O, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein
in a case that A is any one of Mg, Ca and Ba or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, x and y satisfy each of the following expressions (i) and (ii):
0≦ x< 100; and (i)
x+y= 100, (ii)
in a case that A is Sr only, x and y satisfy each of the following expressions (iii) and (iv):
either 0≦ x< 50 or 50< x< 100; and (iii)
x+y= 100 (iv).
2. A semiconductor device comprising:
an active layer,
wherein the active layer comprises a p-type oxide,
wherein the p-type oxide contained in the active layer is amorphous and is represented by the following compositional formula:
x AO. y Cu 2 O
where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu 2 O, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein
in a case that A is any one of Mg, Ca and Ba or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, x and y satisfy each of the following expressions (i) and (ii):
0≦ x< 100; and (i)
x+y= 100, (ii)
and in a case that A is Sr only, x and y satisfy each of the following expressions (iii) and (iv):
either 0≦ x< 50 or 50< x< 100; and (iii)
x+y= 100 (iv).
3. The semiconductor device according to claim 2 , further comprising:
a first electrode; and
a second electrode,
wherein the semiconductor device is a diode where the active layer is formed between the first electrode and the second electrode.
4. The semiconductor device according to claim 2 , further comprising:
a gate electrode configured to apply gate voltage;
a source electrode and a drain electrode which are configured to extract electric current; and
a gate insulating layer,
wherein the semiconductor device is a field effect transistor where the active layer is formed between the source electrode and the drain electrode, and the gate insulating layer is formed between the gate electrode and the active layer.