Multi-source optimal reconfigurable energy harvester
Provided is an energy harvesting device, including a solar cell including at least one active layer for receiving a first range of electromagnetic frequencies, at least one layer including antenna structures for receiving RF energy and formed on a first side of the solar cell, and at least one semiconductor for absorbing IR energy, and formed on a second side of the solar cell opposite the first side.
1. An energy harvesting device, comprising:
a solar cell comprising at least one active layer for receiving a first range of electromagnetic frequencies;
an RF harvester comprising at least one layer comprising antenna structures for receiving RF energy and formed on a first side of the solar cell, and
a thermophotovoltaic cell comprising at least one semiconductor for absorbing IR energy and formed on a second side of the solar cell opposite the first side,
wherein the at least one semiconductor comprises epitaxially grown, ring-shaped spectral response structures.
2. The energy harvesting device of claim 1 , wherein the antenna structures comprise spiral antenna structures capable of capturing RF energy with frequencies of 700 MHz up to 3 GHz.
3. The energy harvesting device of claim 1 , wherein the spectral response structures comprise diameters in a range of 700 nm to 1000 μm.
4. The energy harvesting device of claim 1 , wherein the spectral response structures comprise crystalline Ge.
5. The energy harvesting device of claim 1 , wherein the active layer comprises an inorganic semiconductor.
6. The energy harvesting device of claim 1 , wherein the at least one semiconductor includes
a first semiconductor for absorbing a first range of IR frequencies and
a second semiconductor for absorbing a second range of IR frequencies.
7. The energy harvesting device of claim 1 , wherein the first range of electromagnetic frequencies comprises a range including ultraviolet and visible light.
8. The energy harvesting device of claim 1 wherein the at least one semiconductor layer comprises Si.
9. The energy harvesting device of claim 1 , wherein the at least one semiconductor comprises
a first IR absorber layer comprising Ge ring structures formed on Si; and
a second IR absorber layer comprising GaAs on GaSb.
10. The energy harvesting device of claim 1 , wherein the at least one layer of RF harvester comprises a semiconductor.
11. The energy harvesting device of claim 1 , wherein active layer comprises an organic semiconductor.
12. The energy harvesting device of claim 1 , wherein the spectral response structures comprise multiple sizes of Ge rings for absorbing different IR frequencies.