Drive control method of power semiconductor module and control circuit of power semiconductor module
An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an overcurrent, the short-circuit protection unit outputs an alarm signal to a composition unit. Also, it detects the temperature of the power semiconductor module by using a temperature detection element, converts the detected temperature into a digital signal in the temperature information generating unit, and outputs the digitized temperature information to the composition unit. The composition unit composites the temperature information and the alarm signal and one resultant composite output is transmitted to a control unit on the low voltage side.
1. A drive control method of a power semiconductor module in which a drive control circuit that includes a gate drive unit, a protection unit, a temperature information generating unit and a composition unit, the power semiconductor module are arranged on a high voltage side, and a control unit that controls the drive control circuit is arranged on a low voltage side, the method comprising the steps of:
applying by the gate drive unit a prescribed voltage to a gate of a power semiconductor device and controlling ON and OFF of the power semiconductor device;
responding by the protection unit to an abnormal state of the power semiconductor device and outputting an alarm signal when an abnormal state has been detected;
converting into a digital signal, a temperature detected by a temperature detection element arranged on a board of the power semiconductor module and generating temperature information, by the temperature information generating unit; and
inputting from the power semiconductor module to the composition unit the alarm signal and temperature information generated by the temperature information generating unit;
compositing by the composition unit the inputted alarm signal and temperature information; and
outputting the composited temperature information and alarm signal to one insulation element provided between the high voltage side and the low voltage side.
2. The drive control method of a power semiconductor module according to claim 1 , further comprising the steps of
interrupting control of ON and OFF of the power semiconductor device conducted by the gate drive unit by a short-circuit protection unit of the protection unit; and
outputting by the short-circuit protection unit an overcurrent alarm signal when an overcurrent of the power semiconductor device has been detected, wherein the alarm signal is based on the overcurrent alarm signal.
3. The drive control method of a power semiconductor module according to claim 1 , further comprising the steps of
conducting overheat protection of the power semiconductor device semiconductor module by an overheat protection unit of the protection unit; and
outputting by the overheat protection unit an overheat alarm signal, wherein the alarm signal is based on the overheat alarm signal.
4. The drive control method of a power semiconductor module according to claim 1 , further comprising the step of conducting an AND operation between the temperature information and the alarm signal by an AND circuit of the composition unit.
5. The drive control method of a power semiconductor module according to claim 1 , wherein said step of compositing includes the steps of
(a) compositing the temperature information input to the composition unit by inserting the temperature information into an input/output route of the temperature information and the alarm signal,
(b) outputting by the composition unit a result of said step (a), and
(c) blocking/allowing by a switch of the composition unit in accordance with the alarm signal, passage of the temperature information into the composition unit for compositing.
6. The drive control method of a power semiconductor module according to claim 1 , wherein said step of compositing includes the steps of
blocking/allowing passage the temperature information into the composition unit in accordance with the alarm signal by a switch of the composition unit that is connected between a temperature information input/output terminal and a reference potential,
receiving the alarm signal and the temperature information via an input/output route, compositing the received temperature information and alarm signal, and outputting a result of the compositing, by the composition unit, and
controlling ON and OFF of the switch by the alarm signal.
7. The drive control method of a power semiconductor module according to claim 1 , further comprising the steps of
blocking/allowing passage of the temperature information into the composition unit in accordance with the alarm signal, by a switch of the composition unit, the switch being connected between a temperature information input/output terminal and a reference potential, the switch including an NPN transistor, a collector of the NPN transistor being connected to the temperature information input/output terminal, an emitter of the NPN transistor being connected to the reference potential, a base of the NPN transistor being connected to an output side of an inverting circuit, and an input side of the inverting circuit being connected to the alarm signal input terminal;
receiving the temperature information via an input/output route of the temperature information, compositing the alarm signal and the received temperature information, and outputting a result of the compositing, by the composition unit; and
controlling ON and OFF of the switch by the alarm signal.
8. The drive control method of a power semiconductor module according to claim 1 , further comprising the steps of
blocking/allowing passage of input of the temperature information by a switch of the composition unit in accordance with the alarm signal, the switch being connected between a temperature information input/output terminal and a reference potential, the switch including a PNP transistor, an emitter of the PNP transistor being connected to the temperature information input/output terminal, a collector of the PNP transistor being connected to the reference potential, and a base of the PNP transistor being connected to the alarm signal input terminal;
controlling ON and OFF of the switch by the alarm signal; and
receiving the temperature information input via an input/output route of the temperature information and the alarm signal, compositing the alarm signal and the received temperature information, and outputting a result of the compositing, by the composition unit.
9. The drive control method according to claim 1 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
10. The drive control method according to claim 2 , wherein said step of outputting the composited temperature information and the alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
11. The drive control method according to claim 3 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
12. The drive control method according to claim 4 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
13. The drive control method according to claim 5 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
14. The drive control method according to claim 6 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
15. The drive control method according to claim 7 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
16. The drive control method according to claim 8 , wherein said step of outputting the composited temperature information and alarm signal to one insulation element is outputting the composited temperature information and alarm signal to a photocoupler.
17. A drive control circuit that is provided on a high voltage side and that controls a power semiconductor module provided on a high voltage side, the drive control circuit comprising:
a gate drive unit configured to apply a prescribed voltage to a gate of a power semiconductor device and to control ON and OFF of the power semiconductor device;
a short-circuit protection unit configured to interrupt control of ON and OFF of the power semiconductor device conducted by the gate drive unit and output an alarm signal when an overcurrent of the power semiconductor device has been detected;
a temperature information generating unit configured to convert, into a digital signal, a temperature detected by a temperature detection element arranged on a board of the power semiconductor module and to generate temperature information; and
a composition unit to which the alarm signal and temperature information generated by the temperature information generating unit are input and which composites the alarm signal and the inputted temperature information, wherein
the composition unit composites temperature information obtained from the power semiconductor module, and an alarm signal, and outputs the composited temperature information and alarm signal to one insulation element provided between the high voltage side and the low voltage side.
18. The drive control circuit according to claim 17 , wherein said one insulation element is a photocoupler.