Wiring layer and manufacturing method therefor
To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.
1. A method for manufacturing a wiring layer, comprising:
forming a second insulator over a first insulator;
forming a third insulator over the second insulator;
forming an opening in the third insulator so that it reaches the second insulator;
forming a first conductor over the third insulator and in the opening;
forming a second conductor over the first conductor; and
after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator,
wherein an end of the first conductor is at a level lower than or equal to the top level of the opening,
wherein a top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor, and
wherein a bottom surface of the first conductor is in contact with an upper surface of the second insulator in the opening.
2. The wiring layer manufactured by the method according to claim 1 , wherein the first conductor allows less oxygen to pass therethrough than the second conductor.
3. A method for manufacturing a wiring layer, comprising:
forming a second insulator over a first insulator;
forming a third insulator over the second insulator;
forming an opening in the third insulator so that it reaches the second insulator;
forming a first conductor over the third insulator and in the opening;
forming a second conductor over the first conductor;
after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator;
forming a third conductor over the second conductor and the third insulator; and
performing polishing treatment on the third conductor until the third insulator is reached,
wherein an end of the first conductor is at a level lower than or equal to the top level of the opening,
wherein a top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor,
wherein the third conductor is in contact with the top surface of the second conductor, and is in contact with the end of the first conductor at the end of the opening, and
wherein a bottom surface of the first conductor is in contact with an upper surface of the second insulator in the opening.
4. The wiring layer manufactured by the method according to claim 3 , wherein the first conductor and the third conductor allow less oxygen to pass therethrough than the second conductor.
5. The method for manufacturing a wiring layer according to claim 1 , wherein an upper surface of the first conductor at a bottom of the opening is above a top surface of the second insulator outside the opening.
6. The method for manufacturing a wiring layer according to claim 1 , wherein an upper surface of the second conductor is above a top surface of the second insulator.
7. The method for manufacturing a wiring layer according to claim 3 , wherein an upper surface of the first conductor at a bottom of the opening is above a top surface of the second insulator outside the opening.
8. The method for manufacturing a wiring layer according to claim 3 , wherein an upper surface of the second conductor is above a top surface of the second insulator.
9. The method for manufacturing a wiring layer according to claim 3 , wherein a thickness of the third conductor near an edge of the third conductor is greater than a thickness of the third conductor at a center of the third conductor.
10. The method for manufacturing a wiring layer according to claim 3 , wherein the third conductor comprises a concave surface.