Photoelectric conversion apparatus and camera
A photoelectric conversion apparatus includes a charge accumulation region of a first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, and an element isolation. The first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation, and the second semiconductor region includes a portion arranged below the charge accumulation region, and impurity concentration distributions of the charge accumulation region, the first semiconductor region and the second semiconductor region in a depth direction respectively have peaks at depth Rp1, Rp2, and Rp3, and Rp1<Rp2<Rp3 is satisfied. Impurity concentration C1 of the first semiconductor region at Rp2 is higher than impurity concentration C2 of the second semiconductor region at Rp3.
1. A photoelectric conversion apparatus comprising:
a charge accumulation region of a first conductivity type, the charge accumulation region being arranged in a semiconductor substrate;
a first semiconductor region of a second conductivity type different from the first conductivity type, the first semiconductor region being arranged in the semiconductor substrate;
a second semiconductor region of the second conductivity type, the second semiconductor region being arranged in the semiconductor substrate; and
an element isolation made of an insulator, the element isolation being arranged on the semiconductor substrate,
wherein the first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation, and the second semiconductor region includes a portion arranged below the charge accumulation region, and
wherein an impurity concentration distribution of the charge accumulation region in a depth direction of the semiconductor substrate has a peak at a depth Rp1, an impurity concentration distribution of the first semiconductor region in the depth direction has a peak at a depth Rp2, an impurity concentration distribution of the second semiconductor region in the depth direction has a peak at a depth Rp3, and
Rp1<Rp2<Rp3
is satisfied, and
wherein C1 is an impurity concentration of the first semiconductor region at the depth Rp2, C2 is an impurity concentration of the second semiconductor region at the depth Rp3, and
C1>C2
is satisfied.
2. The apparatus according to claim 1 , wherein a lower end of the first semiconductor region is in a position deeper than an upper end of the second semiconductor region and shallower than a lower end of the second semiconductor region.
3. The apparatus according to claim 1 , wherein a third semiconductor region of the second conductivity type is further arranged in the semiconductor substrate, the third semiconductor region is arranged in a lateral direction of the second semiconductor region, and the first semiconductor region includes a portion arranged between the third semiconductor region and the portion of the second semiconductor region.
4. The apparatus according to claim 3 , wherein a lower end of the third semiconductor region is in a position deeper than a lower end of the second semiconductor region.
5. The apparatus according to claim 3 , wherein an impurity concentration distribution of the third semiconductor region in the depth direction has a peak at a depth Rp4, and
Rp1<Rp2<Rp3<Rp4
is satisfied.
6. The apparatus according to claim 3 , wherein a fourth semiconductor region of the second conductivity type and a fifth semiconductor region of the first conductivity type are further arranged in the semiconductor substrate,
wherein the fourth semiconductor region is arranged on the third semiconductor region, and
wherein the fifth semiconductor region is arranged on the fourth semiconductor region and forms a diffusion region of a transistor.
7. The apparatus according to claim 3 , wherein an impurity concentration distribution of the third semiconductor region has a plurality of peaks in the depth direction.
8. The apparatus according to claim 1 , wherein the impurity concentration distribution of the second semiconductor region has a plurality of peaks in the depth direction.
9. The apparatus according to claim 1 , wherein an impurity concentration distribution of the first semiconductor region has a plurality of peaks in the depth direction.
10. A photoelectric conversion apparatus comprising:
a charge accumulation region of a first conductivity type, the charge accumulation region being arranged in a semiconductor substrate;
a first semiconductor region of a second conductivity type different from the first conductivity type, the first semiconductor region being arranged in the semiconductor substrate;
a second semiconductor region of the second conductivity type, the second semiconductor region being arranged in the semiconductor substrate;
a third semiconductor region of the second conductivity type, the third semiconductor region being arranged in the semiconductor substrate; and
an element isolation made of an insulator, the element isolation being arranged on the semiconductor substrate,
wherein the first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation,
wherein the second semiconductor region includes a portion arranged below the charge accumulation region,
wherein the third semiconductor region is arranged in a lateral direction of the second semiconductor region, and
wherein the first semiconductor region includes a portion arranged between the third semiconductor region and the portion of the second semiconductor region.
11. The apparatus according to claim 10 , wherein a lower end of the third semiconductor region is in a position deeper than a lower end of the second semiconductor region.
12. The apparatus according to claim 10 , wherein a lower end of the first semiconductor region is in a position deeper than an upper end of the second semiconductor region and shallower than a lower end of the second semiconductor region.
13. The apparatus according to claim 10 , wherein the element isolation is an STI (Shallow Trench Isolation).
14. The apparatus according to claim 10 , wherein a lower end of the third semiconductor region is in a position deeper than a lower end of the second semiconductor region.
15. The apparatus according to claim 10 , wherein a fourth semiconductor region of the second conductivity type and a fifth semiconductor region of the first conductivity type are further arranged in the semiconductor substrate,
wherein the fourth semiconductor region is arranged on the third semiconductor region, and
wherein the fifth semiconductor region is arranged on the fourth semiconductor region and forms a diffusion region of a transistor.
16. The apparatus according to claim 10 , wherein an impurity concentration distribution of the third semiconductor region has a plurality of peaks in a depth direction of the semiconductor substrate.
17. The apparatus according to claim 10 , wherein an impurity concentration distribution of the second semiconductor region has a plurality of peaks in a depth direction of the semiconductor substrate.
18. The apparatus according to claim 10 , wherein an impurity concentration distribution of the first semiconductor region has a plurality of peaks in a depth direction of the semiconductor substrate.
19. A camera comprising:
a photoelectric conversion apparatus; and
a processing unit configured to process a signal output from the photoelectric conversion apparatus,
wherein the photoelectric conversion apparatus comprises:
a charge accumulation region of a first conductivity type, the charge accumulation region being arranged in a semiconductor substrate,
a first semiconductor region of a second conductivity type different from the first conductivity type, the first semiconductor region being arranged in the semiconductor substrate,
a second semiconductor region of the second conductivity type, the second semiconductor region being arranged in the semiconductor substrate, and
an element isolation made of an insulator, the element isolation being arranged on the semiconductor substrate,
wherein the first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation, and the second semiconductor region includes a portion arranged below the charge accumulation region,
wherein an impurity concentration distribution of the charge accumulation region in a depth direction of the semiconductor substrate has a peak at a depth Rp1, an impurity concentration distribution of the first semiconductor region in the depth direction has a peak at a depth Rp2, an impurity concentration distribution of the second semiconductor region in the depth direction has a peak at a depth Rp3, and
Rp1<Rp2<Rp3
is satisfied, and
wherein C1 is an impurity concentration of the first semiconductor region at the depth Rp2, C2 is an impurity concentration of the second semiconductor region at the depth Rp3, and
C1>C2
is satisfied.
20. A camera comprising:
a photoelectric conversion apparatus; and
a processing unit configured to process a signal output from the photoelectric conversion apparatus,
wherein the photoelectric conversion apparatus comprises:
a charge accumulation region of a first conductivity type, the charge accumulation region being arranged in a semiconductor substrate,
a first semiconductor region of a second conductivity type different from the first conductivity type, the first semiconductor region being arranged in the semiconductor substrate,
a second semiconductor region of the second conductivity type, the second semiconductor region being arranged in the semiconductor substrate,
a third semiconductor region of the second conductivity type, the third semiconductor region being arranged in the semiconductor substrate, and
an element isolation made of an insulator, the element isolation being arranged on the semiconductor substrate,
wherein the first semiconductor region is arranged so as to extend downward from a portion between the charge accumulation region and the element isolation,
wherein the second semiconductor region includes a portion arranged below the charge accumulation region,
wherein the third semiconductor region is arranged in a lateral direction of the second semiconductor region, and
wherein the first semiconductor region includes a portion arranged between the third semiconductor region and the portion of the second semiconductor region.