IP Library Granted Patent US 9,773,968
Granted Patent B2
US 9,773,968 · App. 14/575,109 · Granted Sep 26, 2017

Piezoelectric film, ferroelectric ceramics and inspection method of piezoelectric film

Inventors: Takeshi Kijima (Chiba, JP); Yuuji Honda (Chiba, JP); Yukinori Tani (Chiba, JP)
Assignee: YOUTEC CO., LTD.
H01L41/1876C04B35/491H01L41/0815H01L41/319C04B2235/787
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Quick Facts
Patent No.
US 9,773,968
App. No.
14/575,109
Granted
Sep 26, 2017
Kind
B2
Abstract

To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention is a piezoelectric film having a crystal oriented in the c-axis direction and a crystal oriented in the a-axis direction, in which, when denoting the amount of a (004) component of the crystal oriented in the c-axis direction by C and denoting the amount of a (400) component of the crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below. C /( A+C )≧0.1  formula 1

Claims (43)

1. A piezoelectric film comprising a crystal oriented in a c-axis direction and a crystal oriented in an a-axis direction, wherein, when denoting an amount of a (004) component of said crystal oriented in the c-axis direction by C and denoting an amount of a (400) component of said crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below,

C /( A+C )≧0.1  formula 1.

2. The piezoelectric film according to claim 1 , wherein 2θ004 in a result of XRD of said (004) component of the crystal oriented in the c-axis direction satisfies a formula 2 below,

95°<2θ004<102°  formula 2.

3. The piezoelectric film according to claim 1 , wherein a d004 value in a result of XRD of said (004) component of the crystal oriented in the c-axis direction satisfies a formula 3 below,

0.9919 <d 004<1.0457  formula 3.

4. The piezoelectric film according to claim 1 , wherein said piezoelectric film is a PZT film, and a c-axis length satisfies formula 4 below,

0.39678 nm< c -axis length<0.41825 nm  formula 4.

5. A ferroelectric ceramics, comprising:

a first stacked film; and

the piezoelectric film according to claim 1 formed on said first stacked film, wherein:

said first stacked film is a film in which a first ZrO2 film and an XOY film are formed sequentially and repeatedly N times and a second ZrO2 film is formed on the film formed repeatedly said N times;

said X is Ca, Mg or Hf;

said Y is 1 or 2; and

said N is an integer of 1 or more.

6. The ferroelectric ceramics according to claim 5 , comprising a second stacked film obtained by stacking a SrTiO3 film and a SrRuO3 film, or a SrTiO3 film or a SrRuO3 film, formed between said first stacked film and said piezoelectric film.

7. The ferroelectric ceramics according to claim 6 , wherein a lead titanate film is formed between said second stacked film or SrTiO3 film or SrRuO3 film and said piezoelectric film.

8. The ferroelectric ceramics according to claim 5 , wherein a second stacked film obtained by stacking a ZrO2 film and an Y2O3 film is formed under said first stacked film, or between said first stacked film and said piezoelectric film.

9. The ferroelectric ceramics according to claim 5 , including an electrode film formed between said first stacked film and said piezoelectric film.

10. The ferroelectric ceramics according to claim 9 , wherein said electrode film is in contact with said first stacked film.

11. The ferroelectric ceramics according to claim 9 , wherein said electrode film includes an oxide or a metal.

12. The ferroelectric ceramics according to claim 9 , wherein said electrode film is a Pt film or an Ir film.

13. The ferroelectric ceramics according to claim 5 , wherein said first stacked film is formed on a Si substrate.

14. A ferroelectric ceramics comprising:

a first stacked film in which a first ZrO2 film, an Y2O3 film and a second ZrO2 film are stacked sequentially;

a second stacked film obtained by stacking a SrTiO3 film and a SrRuO3 film, or a SrTiO3 film or a SrRuO3 film, formed on said first stacked film; and

a piezoelectric film according to claim 1 formed on said second stacked film or the SrTiO3 film or the SrRuO3 film.

15. The ferroelectric ceramics according to claim 14 , comprising an electrode film formed between said first stacked film and said second stacked film or SrTiO3 film or SrRuO3 film.

16. The ferroelectric ceramics according to claim 14 , wherein said first stacked film is formed on a Si substrate.

17. An inspection method of a piezoelectric film, comprising the steps of:

measuring each of a (004) component of a crystal oriented in a c-axis direction and a (400) component of a crystal oriented in an a-axis direction of the piezoelectric film by XRD that uses a multilayer film mirror;

detecting an amount C of said (004) component and an amount A of said (400) component from said measurement result; and

determining from said detection result that the piezoelectric film has excellent piezoelectric properties when a formula 1 below is satisfied, or that the piezoelectric film does not have excellent piezoelectric properties when the formula 1 below is not satisfied,

C /( A+C )≧0.1  formula 1.

18. The inspection method of a piezoelectric film according to claim 17 , wherein the formula 1 is satisfied; and

wherein the method determines that the piezoelectric film has excellent piezoelectric properties when 2θ004 in a result of XRD of said (004) component of the crystal oriented in the c-axis direction satisfies a formula 2 below, or that the piezoelectric film does not have excellent piezoelectric properties when 2θ004 does not satisfy the formula 2 below,

95°<2θ004<102°  formula 2.

19. The inspection method of a piezoelectric film according to claim 17 , wherein the formula 1 is satisfied; and

wherein the method determines that the piezoelectric film has excellent piezoelectric properties when a d004 value in a result of XRD of said (004) component of the crystal oriented in the c-axis direction satisfies a formula 3 below, or that the piezoelectric film does not have excellent piezoelectric properties when a d004 value does not satisfy the formula 3 below,

0.9919 <d 004<1.0457  formula 3.

20. The inspection method of a piezoelectric film according to claim 17 , wherein the formula 1 is satisfied; and

wherein said piezoelectric film is a PZT film, and the method determines that the piezoelectric film has excellent piezoelectric properties when a c-axis length satisfies a formula 4 below, or that the piezoelectric film does not have excellent piezoelectric properties when a c-axis length does not satisfy the formula 4 below,

0.39678 nm< c -axis length<0.41825 nm  formula.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Jul 1, 2022
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: UMI I INVESTMENT LIMITED PARTNERSHIP
Reel/Frame 060572/0037 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2022
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: KRYSTAL INC.
Reel/Frame 060572/0227 →
SECURITY INTEREST Recorded Jan 25, 2022
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: UMI I INVESTMENT LIMITED PARTNERSHIP
Reel/Frame 058763/0517 →
NON-EXCLUSIVE LICENSE Recorded Sep 17, 2019
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: CORETRONIC MEMS CORPORATION
Reel/Frame 050394/0468 →
CHANGE OF NAME Recorded Jun 29, 2018
From: YOUTEC CO., LTD.
To: ADVANCED MATERIAL TECHNOLOGIES, INC.
Reel/Frame 046463/0924 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 28, 2015
From: KIJIMA, TAKESHI; HONDA, YUUJI; TANI, YUKINORI
To: YOUTEC CO., LTD.
Reel/Frame 034830/0866 →
Priority Claims (1)
JP 2013-272681 · Dec 27, 2013 · national
Continuity (1)
Related Publication 20150183190A1 · Jul 2, 2015