Impedance adjustment in a memory device
Methods and apparatus for impedance adjustment operations in memory devices are disclosed. One such method includes adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance, determining configuration information corresponding to a configuration of the particular driver circuit adjusted to the desired impedance, transferring the configuration information to a different memory device and configuring an impedance of a driver circuit of the different memory device responsive to the configuration information.
1. A method of operating a plurality of memory devices, the method comprising:
adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance;
determining configuration information corresponding to a configuration of the particular driver circuit adjusted to the desired impedance;
after determining the configuration information, transferring the configuration information to a different memory device; and
configuring an impedance of a driver circuit of the different memory device responsive to the configuration information.
2. The method of claim 1 , wherein transferring the configuration information to a different memory device further comprises adjusting the configuration information responsive to a correction factor corresponding to the different memory device relative to the particular memory device prior to or subsequent to transferring the configuration information to the different memory device.
3. The method of claim 2 , wherein adjusting the configuration information occurs prior to transferring the configuration information to the different memory device.
4. The method of claim 1 , wherein adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance comprises activating termination devices of the particular driver circuit to produce resistance values of the activated termination devices in an order selected from the group consisting of increasing resistance values and decreasing resistance values.
5. The method of claim 4 , wherein activating the termination devices proceeds until an output voltage of the particular driver circuit reaches a desired voltage.
6. The method of claim 5 , further comprising:
wherein activating the termination devices comprises activating pull-up termination devices;
wherein, if the order produces increasing resistance values, the output voltage is deemed to reach the desired voltage when the output voltage equals or falls below the desired voltage; and
wherein, if the order produces decreasing resistance values, the output voltage is deemed to reach the desired voltage when the output voltage equals or exceeds the desired voltage.
7. The method of claim 5 , further comprising:
wherein activating the termination devices comprises activating pull-down termination devices;
wherein, if the order produces increasing resistance values, the output voltage is deemed to reach the desired voltage when the output voltage equals or exceeds the desired voltage; and
wherein, if the order produces decreasing resistance values, the output voltage is deemed to reach the desired voltage when the output voltage equals or falls below the desired voltage.
8. The method of claim 2 , wherein the correction factor is determined responsive to one or more characteristics of the different memory device relative to the particular memory device.
9. The method of claim 8 , wherein configuring an impedance of a driver circuit of the different memory device responsive to the configuration information comprises configuring the impedance of the driver circuit of the different memory device responsive to the adjusted configuration information.
10. The method of claim 1 , further comprising:
configuring an impedance of one or more other driver circuits of the particular memory device responsive to the configuration information.
11. The method of claim 1 , further comprising:
configuring an impedance of one or more other driver circuits of the particular memory device responsive to the configuration information and correction factors corresponding to the one or more other driver circuits of the particular memory device.
12. The method of claim 1 , further comprising:
configuring an impedance of one or more other driver circuits of the different memory device responsive to the configuration information.
13. The method of claim 1 , wherein adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance further comprises periodically adjusting an impedance of the particular driver circuit of the particular memory device to the desired impedance.
14. The method of claim 1 , wherein adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance further comprises adjusting an impedance of the particular driver circuit to the desired impedance responsive to a change in an operating characteristic of the particular memory device.
15. The method of claim 14 , wherein the change in the operating characteristic of the particular memory device comprises a change selected from the group consisting of an operating temperature of the particular memory device and a change in a power supply potential coupled to the particular driver circuit.
16. The method of claim 1 , wherein adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance further comprises adjusting an impedance of the particular driver circuit to the desired impedance responsive to a reset operation of the particular memory device.
17. The method of claim 1 , further comprising configuring an impedance of a driver circuit of a third memory device responsive to the configuration information.
18. A method of operating a plurality of memory devices, the method comprising:
adjusting an impedance of a particular driver circuit of a particular memory device to a desired impedance;
determining configuration information corresponding to a configuration of the particular driver circuit adjusted to the desired impedance;
transferring the configuration information to a different memory device;
configuring an impedance of a driver circuit of the different memory device responsive to the configuration information;
determining if a command corresponding to a memory device operation to be performed in the particular memory device or another memory device coupled to the particular memory device was received while adjusting the impedance of the particular driver circuit and determining the configuration information corresponding to the configuration of the particular driver circuit adjusted to the desired impedance; and
executing the memory device operation while pausing the adjusting of the impedance of the particular drive circuit and the determining of the configuration information corresponding to the configuration of the particular driver circuit adjusted to the desired impedance.
19. An electronic system, comprising:
a first memory device having an output node coupled to a data node;
a second memory device having an output node coupled to the data node; and
a controller, wherein the controller is configured to:
adjust an impedance of a particular driver circuit of the first memory device to a desired impedance;
determine configuration information corresponding to a configuration of the particular driver circuit of the first memory device adjusted to the desired impedance; and
configure a driver circuit of the second memory device responsive to the configuration information after determining the configuration information.
20. The electronic system of claim 19 , wherein the controller is further configured to transfer the configuration information to the second memory device.
21. The electronic system of claim 19 , wherein the controller is further configured to:
configure the driver circuit of the second memory device responsive to the configuration information and a correction factor corresponding to the second memory device relative to the first memory device.
22. The electronic system of claim 21 , wherein the controller is further configured to generate the correction factor.
23. The electronic system of claim 21 , wherein the controller being configured to configure the driver circuit of the second memory device responsive to the configuration information and the correction factor comprises:
determining adjusted configuration information from the configuration information responsive to the correction factor; and
configuring the driver circuit of the second memory device responsive to the adjusted configuration information.
24. A method of calibrating impedance of a plurality of memory devices, the method comprising:
concurrently coupling termination circuitry of each of two or more memory devices to a reference resistance during a calibration operation of the termination circuitry of each of the two or more memory devices, wherein each of the two or more memory devices is configured to selectively decouple its termination circuitry from the reference resistance for operations other than the calibration operation; and
adjusting an impedance of a shared node coupled to the termination circuitry of each of the two or more memory devices to a desired impedance while the termination circuitry of the two or more memory devices are concurrently coupled to the reference resistance during the calibration operation.
25. A method of calibrating impedance of a plurality of memory devices, the method comprising:
concurrently coupling termination circuitry of each of two or more memory devices to a reference resistance;
adjusting an impedance of a shared node coupled to the termination circuitry of each of the two or more memory devices to a desired impedance while the termination circuitry of the two or more memory devices are concurrently coupled to the reference resistance; and
decoupling the reference resistance from the termination circuitry of the two or more memory devices and adjusting the impedance of the shared node while the reference resistance is decoupled from the termination circuitry.
26. The method of claim 24 , wherein adjusting an impedance of the shared node further comprises adjusting the impedance of the shared node by selectively activating and deactivating one or more termination devices in the termination circuitry of the two or more memory devices.
27. The method of claim 24 , wherein adjusting an impedance of the shared node to a desired impedance further comprises adjusting the impedance of the shared node by selectively activating and deactivating one or more termination devices coupled to the shared node of the two or more memory devices until a voltage sensed on the shared node reaches a desired voltage.
28. A method of calibrating impedance of a plurality of memory devices, the method comprising:
concurrently coupling termination circuitry of each of two or more memory devices to a reference resistance; and
adjusting an impedance of a shared node coupled to the termination circuitry of each of the two or more memory devices to a desired impedance while the termination circuitry of the two or more memory devices are concurrently coupled to the reference resistance, wherein adjusting an impedance of the shared node to a desired impedance further comprises adjusting the impedance of the shared node by selectively activating and deactivating one or more termination devices coupled to the shared node of the two or more memory devices until a voltage sensed on the shared node reaches a desired voltage;
individually determining a number of activated termination devices of a particular memory device of the two or more memory devices to produce the desired impedance on the shared node of the two or more memory devices before concurrently coupling the termination circuitry of each of the two or more memory devices to the reference resistance; and
activating a divided number of termination devices in each of the two or more memory devices as a starting point for selectively activating and deactivating the one or more termination devices in each of the two or more memory devices until a voltage sensed on the shared node reaches the desired voltage;
wherein the divided number of termination devices is determined by dividing the number of activated termination devices of the particular memory device by a number of the two or more memory devices.
29. The electronic system of claim 28 , wherein the divided number is an integer value selected from the group consisting of a closest integer value, a next higher integer value, and a next lower integer value of the number of activated termination devices of the particular memory device divided by the number of the two or more memory devices.
30. An electronic system, comprising:
a first memory device comprising first termination circuitry;
a second memory device comprising second termination circuitry, wherein the first and second memory devices are coupled to a shared node;
a reference resistance selectively coupled to the first termination circuitry and selectively coupled to the second termination circuitry; and
a controller, wherein the controller is configured to cause the first and second termination circuitry to be concurrently coupled to the reference resistance, and to adjust an impedance of the shared node while the first and second termination circuitry are concurrently coupled to the reference resistance.
31. The electronic system of claim 30 , wherein the controller being configured to adjust the impedance of the shared node comprises the controller being configured to adjust the impedance of the shared node to a desired impedance while the first and second termination circuitry are concurrently coupled to the reference resistance.
32. The electronic system of claim 30 , wherein the controller being configured to adjust the impedance of the shared node comprises the controller being configured to adjust the impedance of the shared node while the first and second termination circuitry are concurrently coupled to the reference resistance in response to a change in operating temperature of the electronic system and/or a change in a potential of a power supply of the electronic system.
33. An electronic system, comprising:
a first memory device comprising first termination circuitry;
a second memory device comprising second termination circuitry, wherein the first and second memory devices are coupled to a shared node;
a reference resistance; and
a controller, wherein the controller is configured to cause the first and second termination circuitry to be concurrently coupled to the reference resistance, and to adjust an impedance of the shared node while the first and second termination circuitry are concurrently coupled to the reference resistance, and wherein the controller is further configured to sense a voltage on the shared node and to adjust the impedance of the shared node responsive to the voltage sensed on the shared node while the first and second termination circuitry are concurrently coupled to the reference resistance.
34. An electronic system, comprising:
a first memory device comprising first termination circuitry;
a second memory device comprising second termination circuitry, wherein the first and second memory devices are coupled to a shared node;
a reference resistance; and
a controller, wherein the controller is configured to cause the first and second termination circuitry to be concurrently coupled to the reference resistance, and to adjust an impedance of the shared node while the first and second termination circuitry are concurrently coupled to the reference resistance, and wherein the controller comprises a controller of the first memory device, a controller of the second memory device, and a controller external to the first memory device and the second memory device.