Complementary tunneling FET devices and method for forming the same
Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.
1. A tunneling field effect transistor (TFET), comprising:
a substrate;
a doped first region, disposed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table;
a doped second region, disposed above the substrate, having transparent or semi-transparent oxide n-type semiconductor material; and
a gate stack coupled to the doped first and second regions.
2. The TFET of claim 1 , wherein the transparent or semi-transparent oxide n-type semiconductor material is selected from a group consisting of α-Ga 2 —O 3 , β-Ga 2 —O 3 , In 2 O 3 , and SnO 2 .
3. The TFET of claim 1 , wherein the TFET is a FinFET, Tri-Gate, or square nano-wire based device.
4. The TFET of claim 1 further comprises a lightly doped n-type material coupled to the gate stack, the lightly doped n-type material separating the first and second doped regions from one another.
5. The TFET of claim 1 further comprises a lightly doped p-type material coupled to the gate stack, the lightly doped p-type material separating the first and second doped regions from one another.
6. The TFET of claim 1 , wherein the doped first region is a source region, and wherein the doped second region is a drain region.