Ultraviolet light emitting device

1. A light emitting device comprising:

a substrate;

a light emitting structure on the substrate and including a plurality of compound semiconductors, the light emitting structure including:

at least a first conductive semiconductor layer, the first conductive semiconductor layer having a first surface and a second surface provided at a peripheral region of the first surface of the first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a first electrode layer on the second surface of the first conductive semiconductor layer;

a second electrode layer on a surface of the second conductive semiconductor layer, the second electrode layer including a first surface and a second surface;

a third electrode layer on the first electrode layer; and

a protective layer disposed between the first electrode layer and the second electrode layer,

wherein the protective layer contacts the first surface and the second surface of the first conductive semiconductor layer, the first surface and the second surface of the second electrode layer, the active layer, and the second conductive semiconductor layer,

wherein the active layer is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,

wherein the first electrode layer is spaced apart from a side surface of the active layer, and the first electrode layer is provided along a peripheral portion of the active layer,

wherein the first electrode layer and the third electrode layer are vertically overlapped with the protective layer,

wherein the third electrode layer comprises an ohmic layer on the second surface of the first conductive semiconductor layer, and

wherein the ohmic layer has a closed-loop shape surrounding the side surface of the active layer.

2. The light emitting device of claim 1 , wherein the first electrode layer includes one or two or more layers.

3. The light emitting device of claim 1 , wherein the first electrode layer includes a material to reflect an ultraviolet light having a wavelength in a range of 240 nm to 500 nm.

4. The light emitting device of claim 1 , wherein a height difference between the second surface of the first conductive semiconductor layer and a third surface of the first conductive semiconductor layer is a thickness of the active layer and the second conductive semiconductor layer.

5. The light emitting device of claim 1 , wherein the first conductive semiconductor layer extends to an outer side direction with respect to a side surface of the active layer.

6. The light emitting device of claim 1 , further comprising:

a groove formed along a peripheral portion of the first conductive semiconductor layer corresponding to the first surface and having a depth corresponding to a thickness of at least the active layer and the second conductive semiconductor layer.

7. The light emitting device of claim 1 , wherein the first electrode layer has a bottom surface disposed at a position higher than that of a top surface of the active layer.

8. The light emitting device of claim 1 , wherein the first surface of the first conductive semiconductor layer protrudes in a lower direction with respect to the second surface.

9. The light emitting device of claim 1 , wherein one or two or more portions of side surfaces of the active layer and the second conductive semiconductor layer protrude to an outer side direction.

10. The light emitting device of claim 1 , wherein a distance between a side surface of the first electrode layer and a side surface of the second electrode layer is 1-10 μm.

11. The light emitting device of claim 1 , further comprising:

a first electrode on the first electrode layer; and

a second electrode on the second electrode layer.

12. The light emitting device of claim 1 , wherein the protective layer has a circular shape and surrounds the second electrode layer.

13. The light emitting device of claim 1 , wherein a width of the third electrode layer is less than a width of the first electrode layer, and

wherein the first electrode layer is in contact with both a side surface and a top surface of the third electrode layer.

14. A light emitting device comprising:

a substrate;

a light emitting structure on the substrate and including a plurality of compound semiconductors, the light emitting structure including:

at least a first conductive semiconductor layer, the first conductive semiconductor layer having a first surface and a second surface provided at a peripheral region of the first surface of the first conductive semiconductor layer, and the first surface of the first conductive semiconductor layer protruding in a lower direction with respect to the second surface of the first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer;

a second conductive semiconductor layer on the active layer;

a first electrode layer on the second surface of the first conductive semiconductor layer;

a second electrode layer on a surface of the second conductive semiconductor layer, the second electrode layer including a first surface and a second surface;

a third electrode layer on the first electrode layer; and

a protective layer disposed between the first electrode layer and the second electrode layer, and between a side surface of the active layer and the first electrode layer,

wherein the protective layer contacts the first surface and the second surface of the first conductive semiconductor layer, the first surface and the second surface of the second electrode layer, the active layer, and the second conductive semiconductor layer,

wherein the active layer is disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,

wherein the first electrode layer is provided along a peripheral portion of the active layer,

wherein the first electrode layer and the third electrode layer are vertically overlapped with the protective layer,

wherein the third electrode layer comprises an ohmic layer on the second surface of the first conductive semiconductor layer, and

wherein the ohmic layer has a closed-loop shape surrounding the side surface of the active layer.

15. The light emitting device of claim 14 , wherein the protective layer has a circular shape and surrounds the second electrode layer.

16. The light emitting device of claim 14 , wherein a distance between a side surface of the first electrode layer and a side surface of the second electrode layer is 1-10 μm.

17. The light emitting device of claim 14 , wherein a width of the third electrode layer is less than a width of the first electrode layer, and

wherein the first electrode layer is in contact with both a side surface and a top surface of the third electrode layer.

18. An ultraviolet light emitting device comprising:

a substrate;

a light emitting structure on the substrate and including a plurality of compound semiconductors, the light emitting structure including:

at least a first conductive semiconductor layer;

an active layer on the first conductive semiconductor layer; and

a second conductive semiconductor layer on the active layer, the first conductive semiconductor layer having a first surface corresponding to a light emitting region and a second surface provided at a peripheral region of the first surface, the active layer and the second conductive semiconductor layer provided on the first surface at the light emitting region;

a transparent conductive layer including an ohmic layer and disposed on the second surface of the first conductive semiconductor layer;

a first reflective metal layer on the second surface of the first conductive semiconductor layer and the transparent conductive layer; and

a second reflective metal layer on an entire upper surface of the second conductive semiconductor layer,

wherein the transparent conductive layer and the first reflective metal layer are spaced apart from a side surface of the active layer, and

wherein the transparent conductive layer has a closed-loop shape surrounding the side surface of the active layer.