IP Library › Granted Patent US 9,791,641
Granted Patent B2
US 9,791,641 · App. 14/884,430 · Granted Oct 17, 2017

Inverted 45° mirror for photonic integrated circuits

Inventors: John Heck (Berkeley, CA); Haisheng Rong (Pleasanton, CA)
Assignee: Intel Corporation
G02B6/4214G02B6/122G02B6/136G02B6/26G02B6/42G02B6/4208H01L21/30604G02B2006/12104
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Quick Facts
Patent No.
US 9,791,641
App. No.
14/884,430
Granted
Oct 17, 2017
Kind
B2
Abstract

Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.

Claims (23)

1. A photonic integrated circuit (PIC), comprising:

a {100} crystalline device layer disposed over a substrate;

a thin film dielectric layer disposed over the {110} crystal plane; and

an optical waveguide formed in the device layer, wherein the {110} crystal plane of the device layer forms an end facet optically coupled to the optical waveguide and oriented 45° with respect to a top surface of the substrate, and further wherein the device layer with the end facet and portions of the device layer opposite the end facet being in direct contact with the optical waveguide form a bridge over a void located over the substrate and beneath the dielectric layer.

2. The PIC of claim 1 , wherein the substrate is crystalline silicon, the device layer is crystalline silicon, and the dielectric layer comprises silica.

3. A method of forming a mirror in a photonic integrated circuit (PIC), the method comprising:

performing an etch of a crystalline semiconductor substrate to form a facet oriented 45° from a top surface of the substrate;

bonding the top surface of the substrate to a handle wafer; and

forming, in the substrate, an optical waveguide that is optically coupled with the facet.

4. The method of claim 3 , further comprising oxidizing the top surface of the substrate and the facet prior to the bonding.

5. The method of claim 3 , wherein forming the optical waveguide further comprises:

thinning the substrate to form an device layer; and

etching a portion of the device layer to define the waveguide.

6. A mobile computing platform comprising:

a processor;

a memory;

a display; and

an photonic integrated circuit (PIC) chip comprising

a {100} crystalline device layer disposed over a substrate,

a thin film dielectric layer disposed over the {110} crystal plane, and

an optical waveguide formed in the device layer, wherein the {110} crystal plane of the device layer forms an end facet optically coupled to the optical waveguide and oriented 45° with respect to a top surface of the substrate, and further wherein the device layer with the end facet and portions of the device layer opposite the end facet being in direct contact with the optical waveguide form a bridge over a void located over the substrate and beneath the dielectric layer.

7. The computing platform of claim 6 , wherein the PIC chip further comprises a laser optically coupled to the end facet.

8. The computing platform of claim 6 , wherein a {110} crystal plane of the device layer forms the end facet.

Continuity (2)
Division 13536723 · Jun 28, 2012
Related Publication 20160139350A1 · May 19, 2016