Semiconductor memory device and memory system including the same
A semiconductor memory device includes a memory cell array and a first buffer. The memory cell array includes a plurality of bank arrays. Each of the plurality of bank arrays includes a plurality of memory cells. The memory cell array and the first buffer are configured for performing a first internal read operation, which represents operations of retrieving first data from a first region of the memory cell array and of storing the first data into the first buffer, based on a first read command and a first read address. The first internal read operation is performed based on a deterministic interface in which the first data is stored into the first buffer within a predetermined first duration after the first read command is received and a generation of a first acknowledgement signal is unnecessary after storing the first data into the first buffer is completed.
1. A semiconductor memory device comprising:
a memory cell array including a plurality of bank arrays, each of the plurality of bank arrays including a plurality of memory cells; and
a first internal buffer,
wherein the memory cell array and the first internal buffer are configured to perform a first internal read operation, including retrieving first data from a first region of the memory cell array and storing the first data into the first internal buffer based on a first read command and a first read address received by the semiconductor memory device, and
wherein the first internal read operation is performed such that no acknowledgement signal is output from the semiconductor memory device in response to the first read command after the storing of the first data into the first internal buffer is completed, and
wherein the first internal read operation is performed without outputting the first data from the semiconductor memory device.
2. The semiconductor memory device of claim 1 , wherein the memory cell array and the first internal buffer are configured to perform a first internal write operation, including retrieving the first data from the first internal buffer and storing the first data into a second region of the memory cell array based on a first write command and a first write address received by the semiconductor memory device,
wherein the second region is different from the first region, and
wherein the first internal write operation is performed based on a deterministic interface such that the first data is stored into the second region within a predetermined time period after the first write command is received by the semiconductor memory device and a second acknowledgement signal is not generated after the storing of the first data into the second region is completed.
3. The semiconductor memory device of claim 2 , wherein the first and second regions are arranged in a first row of a first bank array among the plurality of bank arrays.
4. The semiconductor memory device of claim 2 , wherein the first region is arranged in a first row of a first bank array among the plurality of bank arrays, and
wherein the second region is arranged in a second row of the first bank array different from the first row of the first bank array.
5. The semiconductor memory device of claim 2 , wherein the first region is arranged in a first bank array among the plurality of bank arrays, and
wherein the second region is arranged in a second bank array among the plurality of bank arrays, the second bank array being different from the first bank array.
6. The semiconductor memory device of claim 2 , wherein a third acknowledgement signal is not generated after copying the first data in the first region to the second region is completed.
7. The semiconductor memory device of claim 1 , wherein while the first internal read operation is performed, the memory cell array is configured to concurrently perform a first normal read operation based on a second read command and a second read address, or a first normal write operation based on a first write command and a first write address,
wherein the first normal read operation includes retrieving second data from a second region of the memory cell array and outputting the second data to an external device, and
wherein the first normal write operation includes receiving third data from the external device and storing the third data into a third region of the memory cell array.
8. The semiconductor memory device of claim 7 , wherein the second read command is different from the first read command.
9. The semiconductor memory device of claim 1 , wherein a size of the first data is substantially the same as a storage capacity of the first internal buffer.
10. The semiconductor memory device of claim 1 , wherein a size of the first data is smaller than a storage capacity of the first internal buffer.
11. The semiconductor memory device of claim 10 , wherein the memory cell array and the first internal buffer are further configured to perform a second internal read operation, including retrieving second data from a second region of the memory cell array and storing the second data into the first internal buffer based on a second read command and a second read address received by the semiconductor memory device, and
wherein the second region is different from the first region.
12. The semiconductor memory device of claim 11 , wherein the first internal buffer is further configured to store first tag information for identifying the first data and second tag information for identifying the second data.
13. The semiconductor memory device claim 1 , further comprising:
a second internal buffer separate from the first internal buffer,
wherein the memory cell array and the second internal buffer are configured to perform a second internal read operation, including retrieving second data from a second region of the memory cell array and storing the second data into the second internal buffer based on a second read command and a second read address received by the semiconductor memory device, and
wherein the second region is different from the first region.
14. The semiconductor memory device of claim 1 , wherein the first internal buffer is a portion of the memory cell array.
15. A memory system comprising:
a memory controller configured to generate a first read command and a first read address; and
a semiconductor memory device controlled by the memory controller, the semiconductor memory device comprising:
a memory cell array including a plurality of bank arrays, each of the plurality of bank arrays including a plurality of memory cells; and
a first internal buffer,
wherein the memory cell array and the first internal buffer are configured to perform a first internal read operation, including retrieving first data from a first region of the memory cell array and storing the first data into the first internal buffer, based on the first read command and the first read address,
wherein the first internal read operation is performed such that no acknowledgement signal is output from the semiconductor memory device in response to the first read command after the storing the first data into the first internal buffer is completed, and
wherein the first internal read operation is performed without outputting the first data from the semiconductor memory device.
16. A semiconductor memory device comprising:
a memory cell array including a plurality of bank arrays, each of the plurality of bank arrays including a plurality of memory cells arranged in rows and columns;
a first input/output buffer configured to receive input data from a memory controller external to the semiconductor memory device and output data to the memory controller; and
a first internal buffer,
wherein the semiconductor memory device is configured to receive a first command, a first address, a second command, and a second address,
wherein the memory cell array and the first internal buffer are configured to perform a first internal read operation based on the first command and the first address received by the semiconductor memory device, including retrieving first data from a first region of the memory cell array and storing the first data into the first internal buffer, wherein the first data is not output from the semiconductor memory device in performing the first internal read operation,
wherein the memory cell array and the first input/output buffer are configured to perform a second operation based on the second command and the second address received by the semiconductor memory device concurrently with performing the first internal read operation, and
wherein no acknowledgement signal is output from the semiconductor memory device in response to the first command after the storing of the first data into the first internal buffer is completed.
17. The semiconductor memory device of claim 16 , wherein the second operation is an access operation in which second data is transmitted between the semiconductor memory device and an external device.
18. The semiconductor memory device of claim 16 , wherein the second operation is one of an external read operation that includes retrieving second data from a second region of the memory cell array and outputting the second data to an external device or an external write operation that includes receiving third data from the memory controller and storing the third data in the second region of the semiconductor memory device.
19. The semiconductor memory device claim 18 , wherein the first region is arranged in a first bank array among the plurality of bank arrays, and
wherein the second region is arranged in a second bank array among the plurality of bank arrays, the second bank array being different from the first bank array.
20. The semiconductor memory device of claim 16 , wherein the first internal buffer is further configured to store first tag information for identifying the first data.