Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
1. A photovoltaic device, comprising:
a silicon substrate having a thickness in a range of about 2 microns to about 260 microns and a resistivity in a range of about 0.01 to about 0.1 Ohm-m and including a microstructured layer having a plurality of protrusions with a height in a range of about 0.5 microns to about 8 microns, said silicon substrate further including a diode comprising said microstructured layer,
one or more metallic contacts disposed on said silicon substrate to facilitate generation of an electrical signal in response to exposure of said silicon substrate to incident radiation,
wherein said photovoltaic device exhibits a responsivity greater than about 0.1 A/W for one or more wavelengths in a range of about 1050 nm to about 3500 nm.
2. The photovoltaic device of claim 1 , wherein said protrusions comprise a plurality of cone-like protrusions.
3. The photovoltaic device of claim 1 , wherein said protrusions comprise a plurality of columnar protrusions.
4. The photovoltaic device of claim 3 , wherein said columnar protrusions have vertical walls.
5. The photovoltaic device of claim 3 , wherein said columnar protrusions have slanted walls.
6. The photovoltaic device of claim 1 , wherein said protrusions extend from a base to a tip having a radius of curvature of about a few hundred nanometers.
7. The photovoltaic device of claim 1 , wherein said photovoltaic device exhibits a responsivity in a range of about 0.1 A/W to about 100 A/W for one or more wavelengths in said range of about 1050 nm to about 3500 nm.
8. The photovoltaic device of claim 1 , wherein said photovoltaic device exhibits a responsivity greater than about 0.1 A/W for all wavelengths in said range of about 1050 nm to about 3500 nm.
9. The photovoltaic device of claim 1 , wherein said microstructured layer is adjacent a crystalline portion of the substrate.
10. The photovoltaic device of claim 1 , wherein said microstructured layer comprises a dopant.
11. The photovoltaic device of claim 10 , wherein said dopant is nitrogen.
12. The photovoltaic device of claim 10 , wherein said dopant is chlorine.
13. The photovoltaic device of claim 10 , wherein said dopant is any of selenium and tellurium.
14. The photovoltaic device of claim 1 , wherein said microstructured layer is formed by exposing a substrate surface to a plurality of short radiation pulses.
15. The photovoltaic device of claim 14 , wherein said short laser pulses have a pulsewidth in a range of about 100 fs to about 30 ns.
16. The photovoltaic device of claim 14 wherein said short laser pulses have a pulsewidth in a range of about 50 fs to about 500 fs.
17. The photovoltaic device of claim 1 , wherein said one or more metallic contacts comprise a finger grid metallic pattern disposed on said microstructured layer and a metallic coating disposed on an opposed surface of the substrate.