Level shifter, digital-to-analog converter, and buffer amplifier, and source driver and electronic device including the same

1. A digital-to-analog converter, comprising;

a resistor string in which a plurality of resistors are connected; and

a plurality of N-type metal oxide semiconductor (NMOS) transistors in which a plurality of gradation voltages formed by an upper limit voltage and a lower limit voltage being received through one end and the other end of the resistor string respectively are provided to drain electrodes, control signals are provided to gate electrodes, and the gradation voltages are output through source electrodes,

wherein the plurality of NMOS transistors are arranged in a P well, and the P well and body electrodes of the plurality of NMOS transistors are electrically connected and receive a well bias voltage,

wherein the digital-to-analog converter further comprises a plurality of P-type (PMOS) transistors in which the plurality of gradation voltages are respectively provided to source electrodes, the control signals are provided to control gate electrodes, and the gradation voltages are output through drain electrodes,

wherein one or more PMOS transistors among the plurality of PMOS transistors are arranged in an N well, and the N well and body electrodes of the one or more PMOS transistors are electrically connected and receive a well bias voltage, and

wherein the plurality of NMOS transistors arranged in the P well and the plurality of PMOS transistors arranged in the N well have an enduring voltage corresponding to a difference between the upper limit voltage and the lower limit voltage.

2. The digital-to-analog converter of claim 1 , further comprising a decoder configured to control the plurality of NMOS transistors and the plurality of PMOS transistors using control signals having the same swing.

3. The digital-to-analog converter of claim 1 , wherein the upper limit voltage and the lower limit voltage respectively are a maximum voltage and a minimum voltage of a gamma voltage.

4. A digital-to-analog converter, comprising;

a resistor string in which a plurality of resistors are connected; and

a plurality of N-type metal oxide semiconductor (NMOS) transistors in which a plurality of gradation voltages formed by an upper limit voltage and a lower limit voltage being received through one end and the other end of the resistor string respectively are provided to drain electrodes, control signals are provided to gate electrodes, and the gradation voltages are output through source electrodes,

wherein the plurality of NMOS transistors are arranged in a P well, and the P well and body electrodes of the plurality of NMOS transistors are electrically connected and receive a well bias voltage, and

wherein the upper limit voltage is a voltage in which an upper headroom voltage is added to the gamma voltage, and the lower limit voltage is a voltage in which a lower headroom voltage is subtracted from the gamma voltage.

5. A digital-to-analog converter, comprising;

a resistor string in which a plurality of resistors are connected; and

a plurality of N-type metal oxide semiconductor (NMOS) transistors in which a plurality of gradation voltages formed by an upper limit voltage and a lower limit voltage being received through one end and the other end of the resistor string respectively are provided to drain electrodes, control signals are provided to gate electrodes, and the gradation voltages are output through source electrodes,

wherein the plurality of NMOS transistors are arranged in a P well, and the P well and body electrodes of the plurality of NMOS transistors are electrically connected and receive a well bias voltage, and

wherein the control signal is a signal that swings between any one of a maximum voltage of the gradation voltages and the upper limit voltage and any one of a minimum voltage of the gradation voltages and the lower limit voltage.

6. The digital-to-analog converter of claim 1 , wherein the well bias voltage provided to the P well is any one of a minimum voltage of the plurality of gradation voltages and the lower limit voltage.

7. The digital-to-analog converter of claim 1 , wherein the well bias voltage provided to the N well is any one of a maximum voltage of the plurality of gradation voltages and the upper limit voltage.

8. A digital-to-analog converter, comprising;

a resistor string in which a plurality of resistors are connected; and

a plurality of N-type metal oxide semiconductor (NMOS) transistors in which a plurality of gradation voltages formed by an upper limit voltage and a lower limit voltage being received through one end and the other end of the resistor string respectively are provided to drain electrodes, control signals are provided to gate electrodes, and the gradation voltages are output through source electrodes,

wherein the plurality of NMOS transistors are arranged in a P well, and the P well and body electrodes of the plurality of NMOS transistors are electrically connected and receive a well bias voltage,

wherein the digital-to-analog converter further comprises a plurality of P-type (PMOS) transistors in which the plurality of gradation voltages are respectively provided to source electrodes, the control signals are provided to control gate electrodes, and the gradation voltages are output through drain electrodes,

wherein one or more PMOS transistors among the plurality of PMOS transistors are arranged in an N well, and the N well and body electrodes of the one or more PMOS transistors are electrically connected and receive a well bias voltage, and

wherein the plurality of NMOS transistors arranged in the P well and the plurality of PMOS transistors arranged in the N well have an enduring voltage corresponding to a difference between a maximum voltage and a minimum voltage among the plurality of gradation voltages.