IP Library › Granted Patent US 9,799,497
Granted Patent B2
US 9,799,497 · App. 13/968,633 · Granted Oct 24, 2017

Patterned processing kits for material processing

Inventors: Chen-Fang Chung (Hsinchu County, TW); Chih-Tsang Tseng (Hsinchu, TW); Hsiao-Chuan Lee (Hsinchu County, TW); Kuo-Pin Chuang (Hsinchu County, TW); Shuen-Liang Tseng (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company Limited
H01J37/34C23C14/564H01J37/32477
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Quick Facts
Patent No.
US 9,799,497
App. No.
13/968,633
Granted
Oct 24, 2017
Kind
B2
Abstract

Systems and methods are provided for material processing. An example apparatus includes a process-kit component containing a first groove and a second groove. The first groove and the second groove are disposed to form a pattern on a surface of the process-kit component. The process-kit component is configured to be placed into a chamber to reduce material deposition on one or more parts of the chamber during material processing.

Claims (47)

1. An apparatus for material processing using a chamber that includes a substrate support, the apparatus comprising:

a process kit including:

a cover ring disposed in the chamber, including a horizontal ring portion having an inner circumferential member that extends downward from the horizontal ring portion;

a deposition ring coupled to the substrate support, having a substantially U-shaped cross section, including a horizontal portion, and inner and outer vertical portions that extend upward from the horizontal portion, and movable with the substrate support relative to the cover ring from a lower position to an upper position, where in the upper position the outer vertical portion of the deposition ring abuts a bottom surface of the horizontal ring portion of the cover ring, and the inner circumferential member of the cover ring is received into a space defined by the inner and outer vertical portions of the deposition ring;

a first groove; and

a second groove, each of the first groove and the second groove being disposed to form a circular pattern on at least one of a top surface of the cover ring or a top surface of the horizontal portion of the deposition ring and extending along substantially the entire circumference of the at least one of the cover ring or the deposition ring, wherein the process kit is configured to reduce material deposition on one or more parts of the chamber during material processing.

2. The apparatus of claim 1 , wherein the at least one of the cover ring and the deposition ring includes an annular part, the first groove and the second groove being disposed in the annular part.

3. The apparatus of claim 1 , wherein the first groove and the second groove are approximately parallel to each other.

4. The apparatus of claim 1 , wherein:

the cover ring has a horizontal portion that includes the top surface of the cover ring, and a vertical portion that extends downward from the horizontal portion of the cover ring and toward the horizontal portion of the deposition ring; and

the outer vertical portion of the deposition ring abuts the horizontal portion of the cover ring when the deposition ring is at the upper position.

5. The apparatus of claim 1 , wherein the first groove has a width of about 1 mm and a depth of about 0.5 mm, and the second groove has a width of about 1 mm and a depth of about 0.5 mm.

6. The apparatus of claim 1 , wherein:

the process kit further includes a shield disposed in the chamber;

the deposition ring and the shield define therebetween a gap when the deposition ring is at the upper position; and

the cover ring is configured to cover the gap.

7. The apparatus of claim 1 , wherein the process kit further includes a third groove and a fourth groove.

8. The apparatus of claim 7 , wherein the third groove intersects with the fourth groove at an angle.

9. The apparatus of claim 8 , wherein the angle is smaller than or larger than 90°.

10. The apparatus of claim 8 , wherein the angle is approximately 90°.

11. The apparatus of claim 7 , wherein the third groove is approximately parallel to the fourth groove.

12. The apparatus of claim 7 , wherein the first groove, the second groove, the third groove and the fourth groove are disposed to form a mesh pattern.

13. The apparatus of claim 7 , wherein the third groove and the fourth groove intersects on the top surface of the horizontal portion of the deposition ring.

14. The apparatus of claim 7 , wherein the third groove has a width of about 0.5 mm and a depth of about 0.5 mm, and the fourth groove has a width of about 0.5 mm and a depth of about 0.5 mm.

15. The apparatus of claim 7 , wherein the process kit further includes a coil-support component configured to support one or more coils used for material processing.

16. The apparatus of claim 15 , wherein:

the coil-support component includes a globe-shaped part; and

the third groove and the fourth groove are disposed in the globe-shaped part.

17. An apparatus for material processing, the apparatus comprising:

a first process-kit component including:

a circumferential member having a substantially U-shaped cross section and comprising a horizontal surface and an outer vertical wall facing an inner vertical wall, the outer vertical wall, the inner vertical wall, and the horizontal surface defining a circumferential space; and

a first plurality of grooves disposed to form a first pattern on a first surface of the first process-kit component; and

a second process-kit component including:

a second plurality of grooves disposed to form a second pattern on a top surface of the second process-kit component;

a circumferential projection extending away from the top surface, wherein

each of the second plurality of grooves forms a circular pattern and extends along substantially the entire circumference of the second process-kit component,

one of the first plurality of grooves intersects with another of the first plurality of grooves at an angle,

the second plurality of grooves are approximately parallel to each other and are configured to improve adhesion of material deposits,

wherein the circumferential projection is received into the circumferential space and either a bottom surface of the second process-kit component is in contact with the first process-kit component, or the circumferential projection is in contact with the first process-kit component.

18. An apparatus for material processing using a chamber that includes a substrate support and a chamber wall, the apparatus comprising:

a deposition ring configured to reduce formation of material deposits on a top surface of the substrate support, having a substantially U-shaped cross section, and including a horizontal portion, a pair of vertical portions that extend from the horizontal portion, and a first plurality of grooves disposed to form a first pattern on a top surface of the horizontal portion of the deposition ring;

an outer shield configured to reduce formation of material deposits on the chamber wall and to define a gap with the deposition ring;

an inner shield configured to reduce formation of material deposits on the outer shield;

a cover ring configured to cover the gap and including a second plurality of grooves disposed to form a second pattern on a second surface of the cover ring, the cover ring is arranged to contact the deposition ring during material processing and includes an inner circumferential member that extends towards the deposition ring, the inner circumferential member arranged to be received into a space defined by the pair of vertical portions that extend from the horizontal portion; and

a coil-support component mounted to the inner shield and including a third plurality of grooves disposed to form a third pattern on a third surface of the coil-support component, wherein each of the grooves in at least one of the deposition ring, the cover ring, and the coil-support component forms a circular pattern and extends along substantially the entire circumference of the at least one of the deposition ring, the cover ring, and the coil-support component.

19. The apparatus of claim 1 , wherein the top surface of the horizontal portion of the deposition ring is formed with the first and second grooves.

20. The apparatus of claim 1 , wherein the top surface of the cover ring is formed with the first and second grooves.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2013
From: CHUNG, CHEN-FANG; TSENG, CHIH-TSANG; LEE, HSIAO-CHUAN; CHUANG, KUO-PIN; TSENG, SHUEN-LIANG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
Reel/Frame 031060/0491 →
Continuity (1)
Related Publication 20150047563A1 · Feb 19, 2015