Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device includes at least one semiconductor fin, a gate electrode, at least one gate spacer, and a gate dielectric. The semiconductor fin includes at least one recessed portion and at least one channel portion. The gate electrode is present on at least the channel portion of the semiconductor fin. The gate spacer is present on at least one sidewall of the gate electrode. The gate dielectric is present at least between the channel portion of the semiconductor fin and the gate electrode. The gate dielectric extends farther than at least one end surface of the channel portion of the semiconductor fin.
1. A semiconductor device comprising:
at least one semiconductor fin comprising at least one recessed portion and at least one channel portion;
a gate electrode present on at least the channel portion of the semiconductor fin;
at least one gate spacer present on at least one sidewall of the gate electrode;
a gate dielectric present at least between the channel portion of the semiconductor fin and the gate electrode, wherein the gate dielectric extends farther than at least one end surface of the channel portion of the semiconductor fin; and
at least one epitaxy structure present on the recessed portion of the semiconductor fin and in contact with the channel portion of the semiconductor fin, wherein the gate dielectric has opposite inner sidewalls, the inner sidewalls and the end surface of the channel portion of the semiconductor fin define a recess, and the epitaxy structure is at least partially present in the recess.
2. The semiconductor device of claim 1 , wherein the gate dielectric extends farther than said at least one sidewall of the gate electrode.
3. The semiconductor device of claim 1 , wherein the end surface of the channel portion of the semiconductor fin is separated from at least one sidewall of the gate spacer at a lateral distance, and the gate spacer has a width less than the lateral distance.
4. The semiconductor device of claim 1 , wherein the end surface of the channel portion of the semiconductor fin is separated from at least one sidewall of the gate spacer at a lateral distance, and the gate spacer has a width greater than the lateral distance.
5. The semiconductor device of claim 1 , wherein the end surface of the channel portion of the semiconductor fin is separated from at least one sidewall of the gate spacer at a lateral distance, and the gate spacer has a width substantially equal to the lateral distance.
6. The semiconductor device of claim 1 , wherein the recess is further defined by the gate spacer.
7. The semiconductor device of claim 1 , wherein the recess has a first region and a second region, the first region has a width greater than that of the second region.
8. A semiconductor device comprising:
at least one semiconductor fin comprising at least one recessed portion and at least one channel portion;
a gate electrode present on at least the channel portion of the semiconductor fin;
at least one gate spacer present on at least one sidewall of the gate electrode;
a gate dielectric present at least between the channel portion of the semiconductor fin and the gate electrode, wherein a combination of the semiconductor fin, the gate dielectric, and the gate spacer define a recess therein, the recess has a first region and a second region, the first region has a width greater than that of the second region; and
at least one epitaxy structure present on the recessed portion of the semiconductor fin and at least partially in the recess to be in contact with the channel portion of the semiconductor fin.
9. The semiconductor device of claim 8 , wherein the gate spacer is in contact with the gate dielectric.
10. The semiconductor device of claim 8 , wherein an end surface of the gate dielectric is separated from at least one sidewall of the gate spacer at a lateral distance, and the gate spacer has a width greater than the lateral distance.
11. The semiconductor device of claim 8 , wherein the epitaxy structure is present on at least one inner wall of the gate spacer.
12. The semiconductor device of claim 8 , wherein the epitaxy structure is present on at least one inner wall of the gate dielectric.
13. The semiconductor device of claim 8 , wherein the gate electrode is further present on a part of the recessed portion of the semiconductor fin.
14. The semiconductor device of claim 8 , wherein the gate spacer is present on a part of the channel portion of the semiconductor fin.
15. A semiconductor device comprising:
at least one semiconductor fin comprising at least one recessed portion and at least one channel portion;
a gate electrode present on at least the channel portion of the semiconductor fin;
at least one gate spacer present on at least one sidewall of the gate electrode;
a gate dielectric present at least between the channel portion of the semiconductor fin and the gate electrode, wherein the gate dielectric extends farther than at least one end surface of the channel portion of the semiconductor fin; and
at least one epitaxy structure present on the recessed portion of the semiconductor fin and in contact with the channel portion of the semiconductor fin, wherein the recessed portion of the semiconductor fin, the channel portion of the semiconductor fin, and the gate dielectric define a recess, and the epitaxy structure is at least partially present in the recess.
16. The semiconductor device of claim 15 , wherein the gate electrode overlies the epitaxy structure.
17. The semiconductor device of claim 15 , wherein the recess is further defined by the gate spacer.
18. The semiconductor device of claim 15 , wherein the
gate dielectric has a sidewall in contact with the epitaxy structure and the channel portion of the semiconductor fin.
19. The semiconductor device of claim 15 , wherein the recess has a first region and a second region, the first region has a width greater than that of the second region.
20. The semiconductor device of claim 15 , wherein the epitaxy structure is in contact with the gate spacer.