Organic light emitting diode and method of fabricating the same
Provided is an organic light emitting diode including a substrate, a light scattering structure including nano-structures on the substrate, a thin film on the nano-structures, and an air gap between the nano-structures, a planarizing layer covering the thin film and thicker than the thin film, a first electrode on the planarizing layer, an organic emission layer on the first electrode, and a second electrode on the organic emission layer.
1. An organic light emitting diode comprising:
a substrate;
a light scattering structure including nano-structures on the substrate, a thin film on the nano-structures, and an air gap between the nano-structures;
a planarizing layer covering the thin film and thicker than the thin film;
a first electrode on the planarizing layer;
an organic emission layer on the first electrode; and
a second electrode on the organic emission layer.
2. The organic light emitting diode of claim 1 , wherein the nano-structures have a particle shape or a line shape.
3. The organic light emitting diode of claim 1 , wherein the nano-structures have a width ranging from 50 nm to 3000 nm and a distance therebetween ranging from 50 nm to 3000 nm.
4. The organic light emitting diode of claim 1 , wherein the thin film comprises any one of graphene, molybdenum disulfide, or tungsten sulfide.
5. The organic light emitting diode of claim 1 , wherein the thin film has a thickness ranging from 0.1 nm to 10 nm and the planarizing layer has a thickness ranging from 1 nm to 100 nm.
6. A method of fabricating an organic light emitting diode, the method comprising:
forming nano-structures on a substrate;
transferring a thin film on the nano-structures to form an air gap between the nano-structures;
forming a planarizing layer covering the thin film;
forming a first electrode on the planarizing layer; and
forming an organic emission layer on the first electrode.
7. The method of claim 6 , wherein transferring the thin film on the nano-structures comprises:
growing the thin film on a seed film;
separating the thin film from the seed film;
transferring the thin film on the nano-structures; and
heat-treating the thin film.
8. The method of claim 6 , wherein the planarizing layer is formed thicker than the thin film.
9. The method of claim 6 , wherein the thin film comprises any one of graphene, molybdenum disulfide, and tungsten sulfide.