Co or Ni and Cu integration for small and large features in integrated circuits
In one embodiment of the present disclosure, a method for depositing metal in a feature on a workpiece is provided. The method includes electrochemically depositing a second metal layer on a first metal layer on a workpiece having at least two features of two different sizes in a dielectric layer, wherein the second metal layer is a copper layer and wherein the first metal layer includes a metal selected from the group consisting of cobalt and nickel, wherein the first metal layer completely fills the smallest feature but does not completely fill the largest feature.
1. A method for depositing metal in a feature on a workpiece, the method comprising:
electrochemically depositing a second metal layer on a first metal layer on the workpiece having at least two features of two different sizes in a dielectric layer, wherein the second metal layer is a copper layer and wherein the first metal layer includes a metal selected from one of a group consisting of cobalt and nickel, wherein the first metal layer completely fills a smallest feature of the at least two features but does not completely fill a largest feature of the at least two features.
2. The method of claim 1 , wherein one feature of the at least two features has a critical dimension comprising a width of less than or equal to 17 nm.
3. The method of claim 1 , wherein one feature of the at least two features has a critical dimension comprising a width of greater than 20 nm.
4. The method of claim 1 , further comprising heat treating the workpiece after deposition of the second metal layer.
5. The method of claim 4 , wherein a temperature for heat treating the workpiece is in a temperature range of 150 degrees C. to 400 degrees C.
6. The method of claim 4 , wherein heat treating the workpiece anneals the first and second metal layers.
7. The method of claim 4 , wherein heat treating the workpiece reflows the second metal layer to at least partially fill the largest feature.
8. The method of claim 4 , further comprising plasma treating the first metal layer using hydrogen plasma or hydrogen radicals (H*) prior to electrochemically depositing the second metal layer.
9. The method of claim 1 , further comprising heat treating the first metal layer before depositing the second metal layer.
10. The method of claim 9 , wherein heat treating the first metal layer is in a temperature range of 200 degrees C. to 400 degrees C.
11. The method of claim 1 , wherein the second metal layer is a conformal or superconformal layer.
12. The method of claim 1 , wherein the second metal layer includes an overburden.
13. The method of claim 1 , wherein the second metal layer at least partially fills the largest feature without depositing an overburden on the workpiece.
14. The method of claim 1 , further comprising electrochemically depositing a third metal layer on the second metal layer.
15. The method of claim 14 , wherein the third metal layer is an overburden, a cap, a fill layer, a conformal conductive layer, or a superconformal conductive layer.
16. The method of claim 1 , wherein the first metal layer is a first seed layer.
17. The method of claim 16 , further comprising depositing a second seed layer on the first seed layer prior to deposition of the second metal layer.
18. The method of claim 17 , wherein the second seed layer is different in metal composition from the first seed layer.
19. The method of claim 17 , wherein the second seed layer is a copper seed layer.
20. The method of claim 1 , wherein the second metal layer is deposited over an entire surface of the first metal layer.
21. The method of claim 1 , wherein the second metal layer is a bottom-up fill layer.