Vapor deposition mask, frame-equipped vapor deposition mask, and method for producing organic semiconductor element

1. A vapor deposition mask comprising:

a metal mask having a slit; and

a resin mask having a first surface, an opposed second surface, and an opening extending in a thickness direction of the resin mask from the first surface to the second surface and corresponding to a pattern to be produced by vapor deposition,

wherein

the metal mask is stacked on the second surface of the resin mask,

an inner wall surface for composing the opening of the resin mask has at least one inflection point along said thickness direction,

in the thickness direction, an intersection of the first surface and the inner wall surface is a first intersection, an intersection of the second surface and the inner wall surface is a second intersection, and the inflection point is positioned between the first intersection and the second intersection,

an angle (θ 1 ), formed between a straight line connecting the first intersection and the inflection point and the first surface, is larger than an angle (θ 2 ), formed between an imaginary extension of a straight line connecting the inflection point and the second intersection and the second surface, and

at least a portion of the inner wall surface extends outwardly from the first surface toward the second surface in said thickness direction.

2. The vapor deposition mask according to claim 1 , wherein the angle (θ 1 ) is within a range of about 60° to 90°, and

the angle (θ 2 ) is within a range of about 30° to 70°.

3. The vapor deposition mask according to claim 1 , wherein

a plurality of slits are provided in the metal mask,

openings for composing a plurality of screens are provided in the resin mask, and

each of the slits is provided at a position overlapping an entirety of at least one screen.

4. The vapor deposition mask according to claim 1 , wherein

one slit is provided in the metal mask,

a plurality of openings are provided in the resin mask, and

all of the plurality of openings are provided at a position overlapping the one slit.

5. The vapor deposition mask according to claim 1 , wherein a thickness of the resin mask is about 3 μm or more and less than about 10 μm.

6. A frame-equipped vapor deposition mask comprising:

a frame; and

a vapor deposition mask fixed to the frame, wherein the vapor deposition mask comprises:

a metal mask having a slit; and

a resin mask having a first surface, an opposed second surface, and an opening extending in a thickness direction of the resin mask from the first surface to the second surface and corresponding to a pattern to be produced by vapor deposition,

wherein

the metal mask is stacked on the second surface of the resin mask,

an inner wall surface for composing the opening of the resin mask has at least one inflection point along said thickness direction,

in the thickness direction, an intersection of the first surface and the inner wall surface is a first intersection, an intersection of the second surface and the inner wall surface is a second intersection, and the inflection point is positioned between the first intersection, and the second intersection,

an angle (θ 1 ), formed between a straight line connecting the first intersection and the inflection point and the first surface, is larger than an angle (θ 2 ), formed between an imaginary extension of a straight line connecting the inflection point and the second intersection and the second surface, and

at least a portion of the inner wall surface extends outwardly from the first surface toward the second surface in said thickness direction.

7. A method for producing an organic semiconductor element comprising a step of forming a vapor deposition pattern on a vapor deposition target with use of a frame-equipped vapor deposition mask including a vapor deposition mask which is fixed to a frame, wherein

in the step of forming the vapor deposition pattern, the vapor deposition mask fixed to the frame includes:

a metal mask in which a slit is provided; and a resin mask having a first surface, an opposed second surface, and an opening extending in a thickness direction of the resin mask from the first surface to the second surface and corresponding to a pattern to be produced by vapor deposition is provided, the metal mask being stacked on the second surface of the resin mask,

an inner wall surface for composing the opening of the resin mask has at least one inflection point along said thickness direction, and wherein

in the thickness direction, an intersection of the first surface and the inner wall surface is a first intersection, an intersection of the second surface and the inner wall surface is a second intersection, and the inflection point is positioned between the first intersection and the second intersection,

an angle (θ 1 ), formed between a straight line connecting the first intersection and the inflection point and the first surface, is larger than an angle (θ 2 ), formed between an imaginary extension of a straight line connecting the inflection point and the second intersection and the second surface, and

at least a portion of the inner wall surface extends outwardly from the first surface toward the second surface in the thickness direction.

8. The vapor deposition mask according to claim 2 , wherein

a plurality of slits are provided in the metal mask,

openings for composing a plurality of screens are provided in the resin mask, and

each of the slits is provided at a position overlapping an entirety of at least one screen.

9. The vapor deposition mask according to claim 2 , wherein

one slit is provided in the metal mask,

a plurality of openings are provided in the resin mask, and

all of the plurality of openings are provided at a position overlapping the one slit.