Voltage-controlled magnetic-based devices having topological insulator/magnetic insulator heterostructure
A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.
1. A voltage-controlled magnetic-based device, comprising:
a magnetic material having a first contact plane;
a topological insulator adjacent the magnetic material at the first contact plane;
magnetic dopants within the topological insulator;
a first electrode at one side of the topological insulator at a second contact plane; and
a second electrode at an opposite side of the topological insulator at a third contact plane, wherein the second contact plane and the third contact plane are orthogonal to the first contact plane.
2. The device of claim 1 , wherein the magnetic dopants are located within an edge region of the topological insulator.
3. The device of claim 1 , wherein the topological insulator comprises Bi 2 Se 3 .
4. The device of claim 1 , wherein the topological insulator comprises BiSb.
5. The device of claim 1 , wherein the magnetic dopants comprise chromium.
6. The device of claim 1 , wherein the magnetic dopants comprise iron.
7. The device of claim 1 , wherein the magnetic material comprises garnet.
8. A method of operating a voltage-controlled magnetic-based device comprising a magnetic material having a first contact plane; a topological insulator adjacent the magnetic material at the first contact plane; magnetic dopants within the topological insulator; a first electrode at one side of the topological insulator at a second contact plane; and a second electrode at an opposite side of the topological insulator at a third contact plane, wherein the second contact plane and the third contact plane are orthogonal to the first contact plane, the method comprising:
applying a switching voltage across the first electrode and the second electrode to generate an electric field through the topological insulator for a length of time sufficient to change a first magnetization direction of the magnetic material to a second magnetization direction opposite of the first magnetization direction.
9. The method of claim 8 , wherein applying the switching voltage comprises applying a constant 0V to the first electrode and a switching voltage to the second electrode.
10. The method of claim 9 , wherein the switching voltage is a positive voltage.
11. The method of claim 9 , wherein the switching voltage is a negative voltage.
12. The method of claim 9 , wherein the switching voltage has a magnitude of 0.1 V to 1 V.
13. The method of claim 12 , wherein the switching voltage is applied at a switching frequency of 30 GHz.