Memory devices with improved refreshing operation
A method and a system for memory cell programming and erasing with refreshing operation are disclosed. The system includes a selecting module, a processing module and a refresh module. In the method, at first, a target memory cell from a plurality of memory cells in a memory device is selected. Thereafter, the target memory cell belonging to a line of the matrix is programmed or erased by applying a selecting voltage on the target memory cell and a location-related memory cell belonging to the line of the matrix. Then, a refreshing operation to refresh the location-related cell is performed.
1. A memory device, comprising:
a first memory cell coupled to a bit line;
a second memory cell coupled to the bit line; and
a refresh module configured to read data in the second memory cell and then write the data back to the second memory cell in a condition that the first memory cell is programmed or erased.
2. The memory device of claim 1 , wherein the refresh module is further configured to determine if a voltage level of the second memory cell is lower than a predetermined verifying voltage level, or if a current level of the second memory cell is lower than a predetermined verifying current level.
3. The memory device of claim 2 , wherein the refresh module is further configured to rewrite the data back to the second memory cell, in a condition that the voltage level of the second memory cell is higher than or equal to the predetermined verifying voltage level, or that the current level of the second memory cell is lower than the predetermined verifying current level.
4. The memory device of claim 1 , wherein the refresh module is further configured to determine if a voltage level of the second memory cell is higher than or equal to a predetermined verifying voltage level, or if a current level of the second memory cell is lower than a predetermined verifying current level.
5. The memory device of claim 4 , wherein the refresh module is further configured to rewrite the data back to the second memory cell, in a condition that the voltage level of the second memory cell is lower than or equal to the predetermined verifying voltage level, or that the current level of the second memory cell is lower than or equal to the predetermined verifying current level.
6. The memory device of claim 1 , further comprising:
a selecting module configured to select the first memory cell from both of the first memory cell and the second memory cell to be programmed or erased; and
a processing module configured to apply a selecting voltage to the first memory cell and the second memory cell, in order to program or erase the first memory cell.
7. A memory device, comprising:
a plurality of memory cells coupled to a bit line; and
a refresh module configured to refresh, in a condition that a first memory cell of the memory cells is programmed or erased, remaining memory cells excluding the first memory cell of the memory cells, by a plurality of sub-refreshing operations,
wherein each of the sub-refreshing operations comprises:
reading data stored in a first remaining memory cell of the remaining memory cells; and
rewriting the data back to the first remaining memory cell in a condition that, for the first remaining memory cell, a first requirement or a second requirement is met,
wherein whether the first requirement is met is determined based on a comparison result of a voltage level of the first remaining memory cell and a predetermined verifying voltage level, and whether the second requirement is met is determined based on a comparison result of a current level of the first remaining memory cell and a predetermined verifying current level.
8. The memory device of claim 7 , wherein the refresh module is configured to determine that the first requirement is met in a condition that the voltage level of the first remaining memory cell is higher than or equal to the predetermined verifying voltage level, or to determine that the second requirement is met in a condition that the current level of the first remaining memory cell is lower than the predetermined verifying current level.
9. The memory device of claim 7 , wherein the refresh module is configured to determine that the first requirement is met in a condition that the voltage level of the first remaining memory cell is lower than or equal to the predetermined verifying voltage level, or to determine the second requirement is met in a condition that the current level of the first remaining memory cell is lower than or equal to the predetermined verifying current level.
10. The memory device of claim 7 , further comprising:
a selecting module configured to select the first memory cell from the memory cells to be programmed or erased; and
a processing module configured to apply a selecting voltage to the first memory cell and the remaining memory cells, in order to program or erase the first memory cell.
11. The memory device of claim 7 , wherein the memory cells are located at respective intersections of the bit line and a plurality of word lines.
12. A method, comprising:
reading data stored in a first memory cell of a plurality of memory cells, in a condition that a second memory cell of the memory cells is programmed or erased,
wherein the memory cells are coupled to a bit line; and
rewriting the data back to the first memory cell to refresh the first memory cell.
13. The method of claim 12 , further comprising:
determining if a voltage level of the first memory cell is lower than a predetermined verifying voltage level, or if a current level of the second memory cell is lower than a predetermined verifying current level.
14. The method of claim 13 , wherein rewriting the data comprises:
rewriting the data back to the first memory cell, in a condition that the voltage level of the second memory cell is higher than or equal to the predetermined verifying voltage level, or that the current level of the first memory cell is lower than the predetermined verifying current level.
15. The method of claim 12 , further comprising:
determining if a voltage level of the first memory cell is higher than or equal to a predetermined verifying voltage level, or if a current level of the first memory cell is lower than a predetermined verifying current level.
16. The method of claim 15 , wherein rewriting the data comprises:
rewriting the data back to the first memory cell, in a condition that the voltage level of the first memory cell is lower than or equal to the predetermined verifying voltage level, or that the current level of the first memory cell is lower than or equal to the predetermined verifying current level.
17. The method of claim 12 , further comprising:
selecting the second memory cell from the memory cells to be programmed or erased; and
applying a selecting voltage to the second memory cell and remaining memory cells of the memory cells, in order to program or erase the second memory cell.
18. The method of claim 12 , further comprising initializing an operation count.
19. The method of claim 18 , further comprising:
increasing the operation count when a voltage level of the first memory cell is lower than a predetermined verifying voltage level; and
determining if all of the memory cells are checked in accordance with the operation count.
20. The method of claim 18 , further comprising:
increasing the operation count when a current level of the first memory cell is lower than a predetermined verifying current level; and
determining if all of the memory cells are checked in accordance with the operation count.