Semiconductor module and inverter device
In a semiconductor module of the invention, a heat sink has a convex portion in which a convex plane has an area smaller than a joint area to the joint layer, a first stepped portion provided to an edge of the convex portion, a thickness of the heat sink in a portion corresponding to the first stepped portion being smaller than a thickness of the heat sink in a portion corresponding to the convex portion, and a second stepped portion provided to an edge of the first stepped portion, a thickness of the heat sink in a portion corresponding to the second stepped portion being further smaller than the thickness of the heat sink in the portion corresponding to the first stepped portion. The joint layer is joined by the convex portion and the first stepped portion of the heat sink.
1. A semiconductor module, comprising:
a ceramic circuit board having a first conductor layer on a first surface of a ceramic base and a second conductor layer on a second surface of the ceramic base on an opposite side to the first surface;
a semiconductor element mounted on the first conductor layer;
a heat sink having a third surface and a fourth surface on an opposite side to the third surface, the second conductor layer and the third surface being joined via a joint layer;
a fin provided to the fourth surface of the heat sink; and
a refrigerant-channel forming casing firmly fixed to the heat sink along a circumferential edge so as to wrap the fin, wherein:
the third surface of the heat sink has,
a convex portion in which a convex plane has an area smaller than a joint area to the joint layer,
a first stepped portion provided to an edge of the convex portion, a thickness of the heat sink in a portion corresponding to the first stepped portion being smaller than a thickness of the heat sink in a portion corresponding to the convex portion, and
a second stepped portion provided to an edge of the first stepped portion, a thickness of the heat sink in a portion corresponding to the second stepped portion being further smaller than the thickness of the heat sink in the portion corresponding to the first stepped portion;
the joint layer is joined to the convex portion and the first stepped portion of the heat sink and joined to the second stepped portion while a surface of the second stepped portion is exposed partially; and
an edge of the second conductor layer is encapsulated with the joint layer and the second stepped portion is directly adjacent to the first stepped portion.
2. The semiconductor module according to claim 1 , wherein:
corners of the convex plane in the convex portion and corners of the first stepped portion are of an arc shape.
3. The semiconductor module according to claim 1 , wherein:
the first stepped portion and the second stepped portion are provided on only two opposite sides out of four sides of the convex plane of a square shape in the convex portion.
4. The semiconductor module according to claim 1 , wherein:
an angle which a second step wall surface between the first stepped portion and the second stepped portion forms with a surface of the first stepped portion is between 90 degrees and less than 180 degrees.
5. The semiconductor module according to claim 1 , wherein:
the edge of the second conductor layer is disposed outside an edge of the convex plane in the convex portion;
an edge of a surface of the first stepped portion is disposed outside the edge of the second conductor layer; and
an edge of a surface of the second stepped portion is disposed outside the edge of the surface of the first stepped portion.
6. The semiconductor module according to claim 1 , wherein:
a peripheral portion is provided to an edge of the second stepped portion; and
a thickness of the heat sink in a portion corresponding to the peripheral portion is equal to a thickness of the heat sink in a portion corresponding to the convex portion.
7. An inverter device, comprising:
the semiconductor module set forth in claim 1 .