Back-side illuminated (BSI) image sensor with global shutter scheme
In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.
1. A back-side illuminated (BSI) image sensor, comprising:
an image sensing element arranged within a semiconductor substrate;
a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element; and
a reflective material arranged within the semiconductor substrate at a location between the pixel-level memory node and a plane extending along a back-side of the semiconductor substrate and having an aperture that overlies the image sensing element.
2. The BSI image sensor of claim 1 , wherein the reflective material has a horizontal surface that is co-planar with the back-side of the semiconductor substrate.
3. The BSI image sensor of claim 1 , wherein the reflective material is laterally separated from the image sensing element by the semiconductor substrate.
4. The BSI image sensor of claim 1 , wherein the reflective material comprises a metal or a multi-layer reflective film.
5. The BSI image sensor of claim 1 , wherein the reflective material has an angled sidewall that decreases a width of the reflective material as a distance from the back-side of the semiconductor substrate increases.
6. The BSI image sensor of claim 1 ,
wherein the image sensing element comprises a photodiode with a first region within the semiconductor substrate having a first doping type that is different than a second doping type of the semiconductor substrate; and
wherein the pixel-level memory node comprises a second region within the semiconductor substrate having the first doping type.
7. The BSI image sensor of claim 6 , further comprising:
a first transfer transistor gate arranged along a front-side of the semiconductor substrate laterally between the first region and the second region.
8. The BSI image sensor of claim 7 , further comprising:
a memory transistor gate arranged along the front-side of the semiconductor substrate over the second region.
9. The BSI image sensor of claim 8 , further comprising:
a second transfer transistor gate arranged along the front-side of the semiconductor substrate at a position laterally between the memory transistor gate and a floating diffusion node arranged within the semiconductor substrate.
10. The BSI image sensor of claim 1 , further comprising:
a plurality of metal interconnect layers arranged within a dielectric structure disposed along a front-side of the semiconductor substrate opposing the back-side of the semiconductor substrate.
11. A back-side illuminated (BSI) image sensor, comprising:
a photodiode comprising a first region having a first doping type arranged within a semiconductor substrate having a second doping type;
a pixel-level memory node comprising a second region having the first doping type arranged within the semiconductor substrate at a location laterally offset from the first region;
a reflective material arranged within the semiconductor substrate at a location between the pixel-level memory node and a plane extending along a back-side of the semiconductor substrate, wherein the reflective material has sidewall that is separated from the first region by the semiconductor substrate; and
a transfer transistor gate arranged along a front-side of the semiconductor substrate, which opposes the back-side of the semiconductor substrate, at a location laterally between the first region and the second region.
12. The BSI image sensor of claim 11 , wherein the reflective material has a horizontal surface that is co-planar with the back-side of the semiconductor substrate.
13. The BSI image sensor of claim 11 , further comprising:
a third region having the second doping type, wherein the third region is arranged between the first region and the front-side of the semiconductor substrate;
a fourth region having the second doping type, wherein the fourth region is arranged between the second region and the front-side of the semiconductor substrate; and
wherein the transfer transistor gate is laterally arranged between the third region and the fourth region.
14. The BSI image sensor of claim 13 , further comprising:
a memory transistor gate arranged along the front-side of the semiconductor substrate over the fourth region; and
a second transfer transistor gate arranged along the front-side of the semiconductor substrate at a position laterally separated from the transfer transistor gate by the memory transistor gate.
15. The BSI image sensor of claim 11 , wherein the reflective material comprises a metal or a multi-layer reflective film.
16. The BSI image sensor of claim 11 , wherein the reflective material has an angled sidewall that decreases a width of the reflective material as a distance from the back-side of the semiconductor substrate increases.
17. The BSI image sensor of claim 11 , further comprising:
a plurality of metal interconnect layers arranged within a dielectric structure disposed along the front-side of the semiconductor substrate.
18. A back-side illuminated (BSI) image sensor, comprising:
an image sensing element arranged within a semiconductor substrate;
a gate structure arranged along a front-side of the semiconductor substrate between the image sensing element and a memory node arranged within the semiconductor substrate; and
a reflective material embedded within the semiconductor substrate at a location vertically between the memory node and a plane extending along a back-side of the semiconductor substrate, wherein the reflective material has a sidewall that is laterally separated from the image sensing element by the semiconductor substrate.
19. The BSI image sensor of claim 18 , further comprising:
a passivation layer having a surface facing the semiconductor substrate, wherein the surface contacts the back-side of the semiconductor substrate and the reflective material.
20. The BSI image sensor of claim 18 , wherein the reflective material has a surface facing the front-side of the semiconductor substrate, which is vertically separated from the memory node by the semiconductor substrate.