Three-dimensional semiconductor devices
A three-dimensional (3D) semiconductor device includes a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate, a channel structure passing through the gate electrodes and connected to the substrate, and a void disposed in the substrate and positioned below the channel structure.
1. A three-dimensional (3D) semiconductor device, comprising:
a plurality of gate electrodes stacked on a substrate in a direction normal to a top surface of the substrate;
a channel structure passing through the gate electrodes and connected to the substrate; and
a void disposed in the substrate and positioned below the channel structure.
2. The 3D semiconductor device of claim 1 , further comprising:
a residue layer disposed in the substrate and positioned below the channel structure, wherein the void is disposed between the channel structure and the residue layer.
3. The 3D semiconductor device of claim 2 , wherein the channel structure comprises:
a lower semiconductor pattern partially disposed within the substrate; and
an upper semiconductor pattern spaced apart from the substrate,
wherein the lower semiconductor pattern is disposed between upper semiconductor pattern and the substrate, and the void is disposed between the lower semiconductor pattern and the residue layer.
4. The 3D semiconductor device of claim 3 , wherein the void is defined by a bottom surface of the lower semiconductor pattern and a top surface of the residue layer.
5. The 3D semiconductor device of claim 4 , wherein the bottom surface of the lower semiconductor pattern is positioned at a lower level than the top surface of the substrate.
6. The 3D semiconductor device of claim 4 , wherein the bottom surface of the lower semiconductor pattern has a curved shape.
7. The 3D semiconductor device of claim 3 , wherein the lower semiconductor pattern is an epitaxial pattern that is grown using the substrate as a seed layer.
8. The 3D semiconductor device of claim 3 , wherein the residue layer comprises at least one of carbon and oxygen.
9. The 3D semiconductor device of claim 2 , further comprising:
a through hole penetrating the gate electrodes and a portion of the substrate,
wherein the channel structure is disposed in the through hole, and the residue layer and the void are disposed in a lower region of the through hole.
10. The 3D semiconductor device of claim 1 , further comprising:
a plurality of channel structures including the channel structure, and a plurality of voids including the void,
wherein the channel structures are spaced apart from one another in a direction substantially parallel to the top surface of the substrate, the voids are spaced apart from one another in the direction substantially parallel to the top surface of the substrate, and each of the voids is positioned below a corresponding one of the channel structures.
11. A three-dimensional (3D) semiconductor device, comprising:
a plurality of gate electrodes stacked on a substrate in a first direction normal to a top surface of the substrate;
a channel structure disposed in a through hole, wherein the through hole passes through the gate electrodes and at least a portion of the substrate, and the channel structure extends in the first direction; and
a void disposed in the through hole and positioned below the channel structure,
wherein the channel structure comprises a lower semiconductor pattern in contact with the substrate, and the lower semiconductor pattern comprises a bottom surface forming a portion of an inner surface of the void.
12. The 3D semiconductor device of claim 11 , wherein the bottom surface of the lower semiconductor pattern is positioned at a lower level than the top surface of the substrate.
13. The 3D semiconductor device of claim 12 , wherein the bottom surface of the lower semiconductor pattern has a curved shape.
14. The 3D semiconductor device of claim 12 , wherein the void is disposed between the bottom surface of the lower semiconductor pattern and a bottom surface of the through hole.
15. The 3D semiconductor device of claim 14 , further comprising:
a residue layer disposed in the through hole and positioned below the channel structure,
wherein the residue layer is disposed between the void and the bottom surface of the through hole.
16. The 3D semiconductor device of claim 15 , wherein the residue layer comprises a top surface forming another portion of the inner surface of the void.
17. The 3D semiconductor device of claim 15 , wherein the residue layer comprises at least one of carbon and oxygen.
18. The 3D semiconductor device of claim 11 , wherein the lower semiconductor pattern is an epitaxial pattern that is grown using the substrate exposed by the through hole as a seed layer.
19. The 3D semiconductor device of claim 11 , wherein the channel structure further comprises:
an upper semiconductor pattern spaced apart from the substrate,
wherein the lower semiconductor pattern is disposed between the upper semiconductor pattern and the substrate.
20. A three-dimensional (3D) semiconductor device, comprising:
a lower gate electrode disposed on a substrate;
a plurality of upper gate electrodes disposed on the substrate, wherein the lower gate electrode and the upper gate electrodes are sequentially stacked on the substrate in a direction normal to a top surface of the substrate;
a through hole penetrating the lower gate electrode, the upper gate electrodes, and a portion of the substrate;
a lower semiconductor pattern disposed in a lower region of the through hole and partially disposed within the substrate;
a residue layer comprising at least one of carbon and oxygen disposed in the lower region of the through hole below the lower semiconductor pattern; and
a void disposed in the lower region of the through hole between the residue layer and the lower semiconductor pattern, wherein an upper boundary of the void is defined by a bottom surface of the lower semiconductor pattern, and a lower boundary of the void is defined by an upper surface of the residue layer.