Integrated LED light-emitting device and fabrication method thereof
A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.
1. A light-emitting diode (LED), comprising:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;
at least one insulating layer over the lower surface; and
an electrode pad layer over the at least one insulating layer;
wherein:
the electrode pad layer comprises a P electrode region and an N electrode region;
the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer; and
the electrode pad layer is thicker than 50 μm to support the epitaxial structure.
2. The LED of claim 1 , further comprising:
a first insulating layer and a conducting layer between the lower surface and the at least one insulating layer;
wherein the first insulating layer and the conducting layer is configured to uniformly inject current to the epitaxial structure.
3. The LED of claim 1 , further comprising:
an insulator in the electrode pad layer to divide the electrode pad layer under the epitaxial structure into the P and N electrode regions,
wherein a lower surface of the insulator is not higher than a lower surface of the electrode pad layer.
4. A light-emitting diode (LED), comprising:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;
at least one insulating layer over the lower surface; and
an electrode pad layer over the at least one insulating layer;
wherein:
the electrode pad layer comprises a P electrode region and an N electrode region; and
the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer;
the LED further comprising:
an insulator in the electrode pad layer to divide the electrode pad layer under the epitaxial structure into the P and N electrode regions,
wherein a lower surface of the insulator is not higher than a lower surface of the electrode pad layer; and
wherein a height difference between the lower surface of the insulator and the lower surface of the electrode pad layer is 20 - 100 μm.
5. The LED of claim 3 , wherein a melting or softening point of the insulator is lower than a melting point of the electrode pad layer.
6. A light-emitting diode (LED), comprising:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;
at least one insulating layer over the lower surface; and
an electrode pad layer over the at least one insulating layer;
wherein:
the electrode pad layer comprises a P electrode region and an N electrode region; and
the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer;
the LED further comprising:
an insulator in the electrode pad layer to divide the electrode pad layer under the epitaxial structure into the P and N electrode regions,
wherein a lower surface of the insulator is not higher than a lower surface of the electrode pad layer; and
wherein the insulator comprises a colloid material.
7. The LED of claim 1 , wherein areas of the P and N electrode regions are same.
8. The LED of claim 1 , wherein edges of the P and N electrode regions are beyond an edge of the epitaxial structure.
9. A light-emitting system comprising a plurality of integrated light-emitting diode (LED) devices, each device comprising:
at least two isolated LEDs forming a series, a parallel, or a series-parallel circuit;
wherein each LED comprises:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;
at least one insulating layer over the lower surface; and
an electrode pad layer over the at least one insulating layer;
wherein:
the electrode pad layer comprises a P electrode region and an N electrode region;
the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer;
each device further comprises an insulator in the electrode pad layer to divide the electrode pad layer under the epitaxial structure into the P and N electrode regions; and
a lower surface of the insulator is not higher than a surface of the electrode pad layer.
10. The system of claim 9 , wherein the electrode pad layer has a sufficient thickness for supporting the epitaxial structure and coupling each LED in the integrated LED device to form a connection circuit plane with no height difference.
11. The system of claim 9 , wherein the electrode pad layer is directly applied in surface-mounted technology (SMT) packaging.