Amplifier arrangement

1. An amplifier arrangement, comprising:

a first differential stage comprising at least two transistors having a first threshold voltage,

at least a second differential stage comprising at least two transistors having a second threshold voltage different from the first threshold voltage,

at least one of the transistors of the first and second differential stage, respectively, has a control input commonly coupled to an input of the amplifier arrangement,

at least one transistor of the first differential stage and one transistor of the second differential stage are arranged in a common current path, which is coupled to an output of the amplifier arrangement, and

the input of the amplifier arrangement comprising a differential input with two terminals, a first of which being coupled to the control input of at least one transistor of the first differential stage and to the control input of at least one transistor of the second differential stage, and a second of the differential input terminals being coupled to the control input of at least another transistor of the first differential stage and to the control input of at least another transistor of the second differential stage.

2. The amplifier arrangement of claim 1 , in which the two transistors of the first differential stage have a common source node, and in which the two transistors of the second differential stage have a common source node.

3. The amplifier arrangement of claim 2 , in which the common source node of the two transistors of the second differential stage is coupled to a drain terminal of one of the transistors of the first differential stage, and wherein the second differential stage comprises a further transistor pair having a common source node, the common source node being coupled to a drain terminal of another one of the transistors of the first differential stage, thus forming a cascade structure.

4. The amplifier arrangement of claim 1 , wherein the common current path further comprises a load.

5. The amplifier arrangement of claim 4 , the load comprising at least one of the following: a resistor, a current source, a current mirror, a cascode transistor.

6. An amplifier arrangement comprising:

a first differential stage comprising at least two transistors having a first threshold voltage,

at least a second differential stage comprising at least two transistors having a second threshold voltage different from the first threshold voltage,

at least one of the transistors of the first and second differential stage, respectively, has a control input commonly coupled to an input of the amplifier arrangement,

at least one transistor of the first differential stage and one transistor of the second differential stage are arranged in a common current path, which is coupled to an output of the amplifier arrangement, and

a complementary first differential stage comprising at least two transistors having opposite conductivity type compared to the transistors of the first differential stage, and comprising at least a complementary second differential stage comprising at least two transistors having opposite conductivity type compared to the transistors of the second differential stage.

7. The amplifier arrangement of claim 1 , in which at least one control input of one transistor of the first and/or second differential stage is connected to a constant bias voltage.

8. The amplifier arrangement of claim 1 , in which the transistors are of Metal Oxide Semiconductor or other field-effect transistor type.

9. The amplifier arrangement of claim 1 , wherein the first threshold voltage is defined by a first thickness of the gate oxide of the transistors of the first differential stage, and wherein the second threshold voltage is defined by a second thickness of the gate oxide of the transistors of the second differential stage, different from the first thickness.

10. The amplifier arrangement of claim 1 , wherein the first threshold voltage is defined by a first doping of the transistors of the first differential stage, and wherein the second threshold voltage is defined by a second doping of the transistors of the second differential stage, different from the first doping.

11. The amplifier arrangement of claim 1 , wherein the first threshold voltage is defined by a first bulk voltage of the transistors of the first differential stage, and wherein the second threshold voltage is defined by a second bulk voltage of the transistors of the second differential stage, different from the first bulk voltage.

12. The amplifier arrangement of claim 1 , wherein the first and second threshold voltage is defined by respective dual gate transistors with floating gate.