Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)
A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.
1. A method for treating a substrate, comprising:
forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer;
removing portions of the patterning layer to form sidewalls of the patterning layer and expose portions of the coating layer;
depositing a carbon-containing layer on the exposed portions of the coating layer and non-sidewall portions of the patterning layer;
removing the carbon-containing layer and a portion of the coating layer to expose other portions of the coating layer and the patterning layer;
repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.
2. The method of claim 1 , wherein the deposition of the carbon-containing layer comprises:
exposing the substrate to a plurality of carbon-containing gas; and
applying deposition power to the plurality carbon-containing gases.
3. The method of claim 2 , wherein the removing of the carbon-containing layer comprises:
exposing the substrate to the nitrogen-containing gas and hydrogen-containing gas; and
applying etching power to the nitrogen-containing gas and hydrogen-containing gas.
4. The method of claim 3 , wherein deposition power and the etching power comprise a similar magnitude.
5. The method of claim 1 , wherein d the carbon-containing gases comprise CH 3 F and CF 4 .
6. The method of claim 4 , wherein the deposition power and the etching power comprises about 1500V.
7. The method of claim 4 , wherein the deposition power and the etching power comprise between 800V and 2000V.