Semiconductor memory device and method for manufacturing same
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, and a columnar portion. The stacked body includes a first insulating layer provided on the substrate, a first electrode layer provided on the first insulating layer and including polycrystalline silicon, a second insulating layer provided on the first electrode layer, and a second electrode layer provided on the second insulating layer. The columnar portion includes a semiconductor layer extending in a stacking direction of the stacked body and a memory layer provided between the semiconductor layer and the stacked body. The first and second electrode layers respectively have a first thickness and a second thickness in the stacking direction, and the first thickness of the first electrode layer is thicker than the second thickness of the second electrode layer.
1. A semiconductor memory device comprising:
a base;
a stacked body including a first insulating layer provided on the base, a first electrode layer provided on the first insulating layer and including polycrystalline silicon, a second insulating layer provided on the first electrode layer, and a second electrode layer provided on the second insulating layer; and
a columnar portion including a semiconductor layer extending in a stacking direction of the stacked body and a memory layer provided between the semiconductor layer and at least the second electrode layer, a lower end of the semiconductor layer contacting the base,
the first and second electrode layers respectively having a first thickness and a second thickness in the stacking direction,
the first thickness of the first electrode layer being thicker than the second thickness of the second electrode layer, and
the first electrode layer including a first layer including the polycrystalline silicon and a second layer including a metal or a metal compound.
2. The semiconductor memory device according to claim 1 , wherein the first thickness is three times or more thicker than the second thickness.
3. The semiconductor memory device according to claim 1 , wherein the first electrode layer includes boron or phosphorus.
4. The semiconductor memory device according to claim 1 , wherein
the stacked body further includes a plurality of third insulating layers and a plurality of third electrode layers alternately stacked one layer by one layer on the second electrode layer, and
the first thickness is greater than the thickness of each of the third electrode layers.
5. The semiconductor memory device according to claim 4 , wherein
the first thickness is three times or more thicker than the second thickness, and
the first thickness is three times or more thicker than the thickness of each of the third electrode layers.
6. The semiconductor memory device according to claim 1 , wherein the second layer is provided on the first layer.
7. The semiconductor memory device according to claim 6 , wherein the second layer includes tungsten or molybdenum.
8. The semiconductor memory device according to claim 6 , wherein
the first and second layers respectively have a third thickness and a fourth thickness in the stacking direction, and
the third thickness of the first layer is thicker than the fourth thickness of the second layer.
9. The semiconductor memory device according to claim 1 , wherein the first electrode layer is a source side selection gate.
10. The semiconductor memory device according to claim 1 , wherein the second electrode layer includes tungsten or molybdenum.
11. The semiconductor memory device according to claim 1 , further comprising:
an interconnection portion provided in the stacked body and extending in the stacking direction and a first direction crossing the stacking direction,
wherein a lower end of the interconnection portion contacts an upper surface of the base.
12. The semiconductor memory device according to claim 11 , wherein an end portion of the stacked body is a stepped shape so as to form a step for each of the electrode layers, and
the first electrode layer is positioned in a first region and a second region, the columnar portion being disposed in the first region, the steps being forming in the second region, and the second region being adjacent to the first region in the first direction.
13. The semiconductor memory device according to claim 12 , further comprising:
a switching element provided on the first insulating layer; and
a fourth insulating layer provided on the switching element,
wherein the switching element and the fourth insulating layer is positioned in a third region, the third region being adjacent to the second region in the first direction,
the first electrode layer has a first surface opposite to the second insulating layer in the first region,
the fourth insulating layer has a second surface opposite to a surface facing the switching element in the third region, and
the first and second surfaces are substantially positioned on a same plane.
14. The semiconductor memory device according to claim 1 , wherein the memory layer includes a fifth insulating layer provided on a side surface of the semiconductor layer, a charge storage layer provided on a side surface of the fifth insulating layer, and a sixth insulating layer provided on a side surface of the charge storage layer.