Image pixel including a plurality of trenches, image sensor including the same, and image processing system including the same
An image pixel includes a plurality of photodiodes formed in a semiconductor substrate, and a plurality of trenches. Each photodiode is configured to accumulate a plurality of photocharges corresponding to the intensity of light received at each photodiode through a microlens. The plurality of trenches is configured to electrically isolate the photodiodes from one another.
1. An image pixel, comprising
a plurality of photodiodes formed in a semiconductor substrate, wherein each photodiode is configured to accumulate a plurality of photocharges corresponding to an intensity of light received at each photodiode through a microlens; and
a plurality of trenches configured to electrically isolate the photodiodes from one another,
wherein at least one of the plurality of trenches extends from an upper surface of the semiconductor substrate to a lower surface of the semiconductor substratein a cross-sectional view.
2. The image pixel of claim 1 , further comprising:
a wiring layer formed on the lower surface of the semiconductor substrate,
wherein the microlens is disposed on the upper surface of the semiconductor substrate that opposes the lower surface, and the photodiodes are disposed between the wiring layer and the microlens,
wherein an operation is performed on a plurality of pixel signals generated by the photodiodes to obtain information relating to an autofocusing operation.
3. The image pixel of claim 1 , wherein each trench comprises:
a deep trench isolation (DTI) trench formed using a DTI process,
wherein each DTI trench is configured to electrically isolate adjacent photodiodes from among the plurality of photodiodes from each other.
4. The image pixel of claim 3 , wherein at least one of the DTI trenches is formed along an entirety of a vertical length of the semiconductor substrate.
5. The image pixel of claim 3 , wherein at least one of the DTI trenches is formed along a portion of a vertical length of the semiconductor substrate, wherein the portion of the vertical length is less than an entirety of the vertical length.
6. The image pixel of claim 3 , wherein the DTI trenches are formed using a back trench process.
7. The image pixel of claim 3 , wherein the DTI trenches are formed using a front trench process.
8. The image pixel of claim 1 , wherein each trench comprises;
a deep trench isolation (DTI) trench formed using a DTI process,
wherein at least one of the DTI trenches is configured to electrically isolate the plurality of photodiodes formed in the image pixel from a photodiode formed in an adjacent image pixel.
9. The image pixel of claim 8 , wherein, at least one of the DTI trenches is formed along an entirety of a vertical length of the semiconductor substrate.
10. The image pixel of claim 8 , wherein at least one of the DTI trenches is formed along a portion of a vertical length of the semiconductor substrate, wherein the portion of the vertical length is less than an entirety of the vertical length.
11. The image pixel of claim 8 , wherein the DTI trenches are formed using a back trench process.
12. The image pixel of claim 8 , wherein the DTI trenches are formed using a front trench process.
13. An image sensor, comprising:
a pixel array comprising a plurality of image pixels,
wherein each image pixel comprises:
a plurality of photodiodes formed in a semiconductor substrate, wherein each photodiode is configured to accumulate a plurality of photocharges corresponding to an intensity of light received at each photodiode through a microlens; and
a plurality of trenches configured to electrically isolate the photodiodes from one another,
wherein at least one of the plurality of trenches has a different depth from another one of the plurality of trenches.
14. The image sensor of claim 13 , further comprising:
a wiring layer formed on a first surface of the semiconductor substrate,
wherein the microlens is disposed on a second surface of the semiconductor substrate that opposes the first surface, and the photodiodes are disposed between the wiring layer and the microlens,
wherein an operation is performed on a plurality of pixel signals generated by the photodiodes to obtain information relating to an autofocusing operation.
15. The image sensor of claim 13 , wherein the trenches comprise:
a first deep trench isolation (DTI) trench formed using a DTI process and configured to electrically isolate adjacent photodiodes from among the plurality of photodiodes from each other; and
a second DTI trench formed using a DTI process and configured to electrically isolate the plurality of photodiodes formed in the image pixel from a photodiode formed in an adjacent image pixel.
16. The image sensor of claim 15 , wherein each of the first DTI trench and the second DTI trench is formed along an entirety of a vertical length of the semiconductor substrate, or along a portion of the vertical length of the semiconductor substrate that is less than the entirety of the vertical length.
17. The image sensor of claim 15 , wherein each of the first DTI trench and the second DTI trench is formed using one of a back trench process and a front trench process.
18. An image pixel, comprising:
a plurality of photodiodes formed in a semiconductor substrate, wherein each photodiode is configured to accumulate a plurality of photocharges corresponding to an intensity of light received at each photodiode through a microlens;
a first trench configured to electrically isolate adjacent photodiodes from among the plurality of photodiodes from each other;
a second trench configured to electrically isolate the plurality of photodiodes formed in the image pixel from a photodiode formed in a first adjacent image pixel disposed adjacent to a first side of the image pixel; and
a third configured to electrically isolate the polarity of photodiodes formed in the image pixel from a photodiode formed in a second adjacent image pixel disposed adjacent to a second side of the image pixel that opposes the first side,
wherein the first trench extends from an uppermost surface of the semiconductor substrate to a lowermost surface of the semiconductor substrate in a vertical direction,
wherein second and third trenches extend from the uppermost surface and do not fully extend to the lowermost surface in the vertical direction, or extend from the lowermost surface and do not fully extend to the uppermost surface in the vertical direction.