OLED display device with auxiliary electrode and preparation method thereof, display apparatus

1. An organic light emitting diode (OLED) display device, comprising a thin film transistor, a first electrode, a second electrode, an organic functional layer located between the first electrode and the second electrode, and a first auxiliary electrode formed from a topological insulator, the topological insulator is a material having an insulator energy gap in its bulk and a Dirac type spin non-degeneration electro-conductive marginal state without an energy gap on its boundary or surface;

wherein, the thin film transistor comprises a gate electrode, a source electrode and a drain electrode; the first electrode is electrically connected with the drain electrode;

the first auxiliary electrode is electrically connected with the second electrode to provide electrical signals for the second electrode; and

wherein the topological insulator comprises at least one selected from the group consisting of HgTe, Bi x Sb 1-x , Sb 2 Te 3 , Bi 2 Te 3 , Bi 2 Se 3 , TlBiTe 2 , TlBiSe 2 , Ge 1 Bi 4 Te 7 , Ge 2 Bi 2 Te 5 , Ge 1 Bi 2 Te 4 , AmN, PuTe, monolayer tin and a variant material of monolayer tin,

wherein the variant material of monolayer tin is formed by surface-modifying or magnetic-doping the monolayer tin through adding a functional group such as —F, —Cl, —Br, —I and —OH.

2. The display device as defined according to claim 1 , wherein the first electrode and the second electrode are an anode and a cathode, respectively.

3. The display device as defined according to claim 1 , wherein the variant material of monolayer tin is a tin fluorine compound formed by surface-modifying monolayer tin with fluorine atom.

4. The display device as defined according to claim 1 , wherein the first auxiliary electrode is strip-shaped, and the display device comprises a plurality of the first auxiliary electrode strips.

5. A display apparatus, comprising an array substrate and a package substrate, the array substrate and the package substrate being provided with an organic light emitting diode (OLED) display device,

wherein the OLED display device comprises a thin film transistor, a first electrode, a second electrode, an organic functional layer located between the first electrode and the second electrode, and a first auxiliary electrode formed from a topological insulator, the topological insulator is a material having an insulator energy gap in its bulk and a Dirac type spin non-degeneration electro-conductive marginal state without an energy gap on its boundary or surface,

wherein, the thin film transistor comprises a gate electrode, a source electrode and a drain electrode; the first electrode is electrically connected with the drain electrode; and

the first auxiliary electrode is electrically connected with the second electrode to provide electrical signals for the second electrode; and

wherein the topological insulator comprises at least one selected from the group consisting of HgTe, Bi x Sb 1-x , Sb 2 Te 3 , Bi 2 Te 3 , Bi 2 Se 3 , TlBiTe 2 , TlBiSe 2 , Ge 1 Bi 4 Te 7 , Ge 2 Bi 2 Te 5 , Ge 1 Bi 2 Te 4 , AmN, PuTe, monolayer tin and a variant material of monolayer tin,

wherein the variant material of monolayer tin is formed by surface-modifying or magnetic-doping the monolayer tin through adding a functional group such as —F, —Cl, —Br, —I and —OH.

6. The display apparatus as defined according to claim 5 , wherein the thin film transistor, the first electrode, the second electrode, the organic functional layer and the first auxiliary electrode are formed on the array substrate, and the first auxiliary electrode is formed on the second electrode, directly contacts the second electrode and is electrically connected with the second electrode.

7. The display apparatus as defined according to claim 6 , wherein a black matrix is formed on the package substrate; and upon the first auxiliary electrode is strip-shaped, the first auxiliary electrode is located at a position corresponding to the black matrix.

8. The display apparatus as defined according to claim 5 , wherein the thin film transistor, the first electrode, the second electrode and the organic functional layer are formed on the array substrate; and the first auxiliary electrode is formed on the package substrate.

9. The display apparatus as defined according to claim 8 , wherein a second auxiliary electrode is also formed on the package substrate; and upon the first auxiliary electrode is strip-shaped, the first auxiliary electrode is electrically connected with the second electrode through the second auxiliary electrode.

10. The display apparatus as defined according to claim 8 , wherein a black matrix is formed on the package substrate; and upon the first auxiliary electrode is strip-shaped, the first auxiliary electrode is located at a position corresponding to the black matrix.

11. The display apparatus as defined according to claim 5 , wherein a black matrix is formed on the package substrate; and upon the first auxiliary electrode is strip-shaped, the first auxiliary electrode is located at a position corresponding to the black matrix.

12. A method for preparing an organic light emitting diode (OLED) display device, comprising:

forming a thin film transistor, comprising a gate electrode, a source electrode and a drain electrode of the thin film transistor;

forming a first electrode which is electrically connected with the drain electrode;

forming an organic functional layer and a second electrode, the organic functional layer located between the first electrode and the second electrode;

forming a topological insulator into a first auxiliary electrode which is electrically connected with the second electrode, the first auxiliary electrode being configured for providing electrical signals for the second electrode,

wherein the topological insulator is a material having an insulator energy gap in its bulk and a Dirac type spin non-degeneration electro-conductive marginal state without an energy gap in its boundary or surface,

wherein the topological insulator comprises at least one selected from the group consisting of HgTe, Bi x Sb 1-x , Sb 2 Te 3 , Bi 2 Te 3 , Bi 2 Se 3 , TlBiTe 2 , TlBiSe 2 , Ge 1 Bi 4 Te 7 , Ge 2 Bi 2 Te 5 , Ge 1 Bi 2 Te 4 , AmN, PuTe, monolayer tin and a variant material of monolayer tin, and

wherein the variant material of monolayer tin is formed by surface-modifying or magnetic-doping the monolayer tin through adding a functional group such as —F, —Cl, —Br, —I and —OH.

13. The method as defined according to claim 12 , wherein forming of a topological insulator into a first auxiliary electrode which is electrically connected with the second electrode comprises:

etching to pattern a substrate to form a pattern corresponding to the first auxiliary electrode;

forming a thin film of the topological insulator on a surface of the substrate that is patterned;

removing the substrate to obtain a first auxiliary electrode pattern formed by the topological insulator; and

adhering the first auxiliary electrode pattern on a zone corresponding to the first auxiliary electrode to electrically connect the first auxiliary electrode pattern with the second electrode.

14. The method as defined according to claim 13 , wherein the first electrode and the second electrode are an anode and a cathode, respectively.

15. The method as defined according to claim 12 , wherein the first electrode and the second electrode are an anode and a cathode, respectively.