IP Library Granted Patent US 9,823,136
Granted Patent B2
US 9,823,136 · App. 14/534,419 · Granted Nov 21, 2017

Temperature sensor having a cover layer with aluminum oxide, silicon oxide, yttrium oxide and boron oxide

Inventors: Katherine O'Sullivan (Farranfore, IE); Anthony Herlihy (Tralee, IE); Anthony Maher (Foynes, IE); Balasubramaniam Vaidhyanathan (Leicestershire, GB); Yang Chen (Changchun, CN)
Assignee: SENSATA TECHNOLOGIES BERMUDA LTD
G01K7/183G01K1/08G01K1/12G01K7/18H01C7/021
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Quick Facts
Patent No.
US 9,823,136
App. No.
14/534,419
Granted
Nov 21, 2017
Kind
B2
Abstract

A temperature sensor includes a substrate, a platinum resistor arranged on at least one surface of the substrate, a protective layer covering at least a portion of the platinum resistor and a cover layer covering at least a portion of the protective layer, the cover layer including Al2O3, SiO2 and Y2O3. The cover layer may also include B2O3. A conductive wire may be electrically connected to the platinum resistor. A glass ceramic may be covering at least a portion of the conductive wire, platinum resistor, protective layer and cover layer.

Claims (36)

1. A temperature sensor, comprising:

a substrate;

a platinum resistor arranged on the substrate;

a protective layer covering the platinum resistor; and

a cover layer covering the protective layer, the cover layer containing Al 2 O 3 and Si 2 O, wherein the cover layer also contains Y 2 O 3 and B 2 O 3 :

wherein the cover layer contains 30 to 70% by weight of Si 2 O; and

wherein the cover layer contains 1 to 20% by weight of B 2 O 3 .

2. The temperature sensor according to claim 1 , wherein the cover layer contains at least 5% by weight of Y 2 O 3 .

3. The temperature sensor according to claim 1 , wherein the cover layer contains at least 10% by weight of Y 2 O 3 .

4. The temperature sensor according to claim 1 , wherein the cover layer contains more Si 2 O by weight than Al 2 O 3 .

5. The temperature sensor according to claim 1 , wherein the cover layer contains more Al 2 O 3 by weight than Y 2 O 3 .

6. The temperature sensor according to claim 1 , wherein the cover layer contains less than 30% by weight of Y 2 O 3 .

7. The temperature sensor according to claim 1 , wherein the cover layer contains less than 20% by weight of Y 2 O 3 .

8. The temperature sensor according to claim 1 , wherein the cover layer contains 15 to 30% by weight of Al 2 O 3 .

9. The temperature sensor according to claim 1 , wherein the cover layer contains 20 to 25% by weight of Al 2 O 3 .

10. The temperature sensor according to claim 1 , wherein the cover layer contains 40 to 60% by weight of Si 2 O.

11. The temperature sensor according to claim 1 , wherein the cover layer contains 1 to 25% by weight of B 2 O 3 .

12. The temperature sensor according to claim 1 , wherein the cover layer contains less than 20% by weight of components that are not Al 2 O 3 , Si 2 O, Y 2 O 3 , nor B 2 O 3 .

13. The temperature sensor according to claim 1 , wherein the cover layer contains less than 10% by weight of components that are not Al 2 O 3 , Si 2 O, Y 2 O 3 , nor B 2 O 3 .

14. The temperature sensor according to claim 1 , wherein the cover layer is a glaze layer.

15. A temperature sensor, comprising,

a substrate;

a platinum resistor arranged on the substrate;

a protective layer covering the platinum resistor; and

a cover layer covering the protective layer, the cover layer containing Al 2 O 3 and Si 2 O, wherein the Si 2 O is 30 to 70% by weight, wherein the cover layer also contains Y 2 O 3 and contains 1 to 20% by weight of B 2 O 3 ;

wherein the cover layer protects the temperature sensor above 1000° C., the temperature sensor configured to measure temperatures up to 1200° C.

16. A temperature sensor, comprising:

a substrate;

a platinum resistor arranged on at least one surface of the substrate;

a protective layer covering at least a portion of the platinum resistor; and

a cover layer covering at least a portion of the protective layer, the cover layer comprising Al 2 O 3 , Si 2 O, Y 2 O 3 and B 2 O 3

wherein the cover layer contains 1 to 20% by weight of B 2 O 3 ;

wherein the cover layer contains 30 to 70% by weight of Si 2 O; and

wherein the cover layer protects the temperature sensor above 1000° C., the temperature sensor configured to measure temperatures up to 1200° C.

17. The temperature sensor of claim 16 , including a conductive wire electrically connected to the platinum resistor.

18. The temperature sensor of claim 17 , including a glass ceramic covering at least a portion of the conductive wire, platinum resistor, protective layer and cover layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2022
From: SENSATA TECHNOLOGIES BERMUDA LTD.
To: SENSATA TECHNOLOGIES, INC.
Reel/Frame 062129/0638 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2017
From: O'SULLIVAN, KATHERINE; HERLIHY, ANTHONY; MAHER, ANTHONY; VAIDHYANATHAN, BALASUBRAMANIAM
To: SENSATA TECHNOLOGIES BERMUDA LTD
Reel/Frame 043850/0594 →
Priority Claims (1)
DE 10 2013 112 493 · Nov 13, 2013 · national
Continuity (1)
Related Publication 20150131702A1 · May 14, 2015