Capacitive physical quantity sensor

1. A capacitive physical quantity sensor, comprising:

a first substrate having one surface;

a movable electrode disposed on the one surface of the first substrate and displaceable along the one surface in response to an application of a physical quantity;

a fixed electrode disposed on the one surface of the first substrate and facing the movable electrode, an interval between the fixed electrode and the movable electrode changing in response to a displacement of the movable electrode; and

a second substrate joining with the first substrate, wherein

an auxiliary electrode is disposed on a portion of the second substrate to face the movable electrode, and the auxiliary electrode has a facing area that faces the movable electrode,

the facing area in a case where the movable electrode is displaced in one direction is different from the facing area in a case where the movable electrode is displaced in an opposite direction opposite to the one direction, and

the physical quantity applied in a displacement direction of each of the movable electrodes with respect to the fixed electrode is detected based on both of a first capacitance, which is generated corresponding to the interval between the fixed electrode and the movable electrode, and a second capacitance, which is generated corresponding to an interval between the facing area of the movable electrode and the auxiliary electrode.

2. The capacitive physical quantity sensor according to claim 1 , wherein

the auxiliary electrode is disposed to face only a part of the movable electrode.

3. The capacitive physical quantity sensor according to claim 1 , wherein

the second substrate is disposed on another surface of the first substrate, which is opposite to the one surface of the first substrate, and

the second substrate supports the first substrate.

4. The capacitive physical quantity sensor according to claim 1 , wherein

the first substrate includes a support layer, an insulating film disposed on the support layer and a semiconductor layer disposed on the insulating film, and

the second substrate is disposed on the one surface of the first substrate and seals the movable electrode, the fixed electrode, and the auxiliary electrode.

5. The capacitive physical quantity sensor according to claim 4 , wherein

the support layer and the semiconductor layer are made of silicon.

6. The capacitive physical quantity sensor according to claim 1 , wherein

the second substrate is disposed on the one surface of the first substrate and seals the movable electrode, the fixed electrode, and the auxiliary electrode,

another second substrate is provided in addition to the second substrate, a second electrode is disposed on an opposite side of the first substrate from the one surface of the first substrate and supports the first substrate, and

the auxiliary electrode is disposed both on the second substrate and on the another second substrate.

7. The capacitive physical quantity sensor according to claim 1 , wherein

the movable electrode has a rectangular shape in a cross-section taken along a displacement direction of the movable electrode and has a surface facing the second substrate, and

when the surface of the movable electrode is divided into two regions in a direction perpendicular to the displacement direction of the movable electrode, only one of the two regions faces the auxiliary electrode.

8. The capacitive physical quantity sensor according to claim 1 , wherein

a plurality of the movable electrodes are disposed alternately with a plurality of the fixed electrodes,

a wiring part is disposed on the second substrate at portions facing the plurality of the movable electrodes and the plurality of the fixed electrodes,

the wiring part includes a plurality of protruded portions that narrow intervals between the wiring part and the plurality of the movable electrodes,

a plurality of the auxiliary electrodes are provided by the plurality of protruded portions of the wiring part which narrow the intervals between the wiring part and the plurality of the movable electrodes,

an interval between each of the plurality of the auxiliary electrodes and each of the plurality of the movable electrodes is equal to an interval between each of the plurality of the movable electrodes and the corresponding fixed electrode, and

an interval between a remaining portion of the wiring part, which is excluded from the plurality of protruded portions that configuring the plurality of the auxiliary electrodes, and each of the plurality of the movable electrodes is equal to an interval between each of the plurality of the movable electrodes and one of the plurality of the fixed electrodes between which the interval from the movable electrode is increased in response to the application of the physical quantity.

9. The capacitive physical quantity sensor according to claim 1 , wherein

the fixed electrode includes a first fixed electrode and a second fixed electrode, an interval between the first fixed electrode and the movable electrode becomes smaller when the movable electrode is displaced in the one direction, and an interval between the second fixed electrode and the movable electrode becomes larger when the movable electrode is displaced in the one direction,

the auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode, a facing area of the first auxiliary electrode facing the movable electrode becomes larger when the movable electrode is displaced in the one direction, and a facing area of the second auxiliary electrode facing the movable electrode becomes smaller when the movable electrode is displaced in the one direction, and

a difference between a sum of the first capacitance between the movable electrode and the first fixed electrode and the second capacitance between the movable electrode and the first auxiliary electrode, and a sum of a third capacitance between the movable electrode and the second fixed electrode and a fourth capacitance between the movable electrode and the second auxiliary electrode is referred in generation of a sensor signal to be output.