Oxide semiconductor transistor used as pixel element of display device and manufacturing method therefor
An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.
1. An oxide semiconductor transistor used in a pixel element of a display device, the oxide semiconductor transistor comprising:
a substrate;
a first gate electrode located on the substrate;
a source electrode and a drain electrode located on the first gate electrode; and
a second gate electrode located on the source electrode and the drain electrode, wherein
the first gate electrode is electrically connected to the second gate electrode,
the same voltage is applied to the first gate electrode and the second gate electrode,
a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode, and
an offset indicating a distance between one terminal of the second gate electrode and the source electrode or a distance between another terminal of the second gate electrode and the drain electrode is 0.5μm to 5μm.
2. The oxide semiconductor transistor of the claim 1 , wherein the width of the second gate electrode is 2μm or more.
3. The oxide semiconductor transistor of claim 1 , further comprising:
a connection electrode configured to connect electrically the first gate electrode to the second gate electrode.
4. The oxide semiconductor transistor of claim 1 , further comprising:
a gate insulator located between the first gate electrode and the source electrode/the drain electrode;
an oxide semiconductor layer located between the gate insulator and the source electrode/the drain electrode; and
a passivation layer located between the source electrode/the drain electrode and the second gate electrode.
5. The oxide semiconductor transistor of claim 4 , wherein the source electrode and the drain electrode are disposed in parallel with each other,
the oxide semiconductor transistor further comprises an etch stopper of which a part or more locates between the source electrode and the drain electrode.
6. The oxide semiconductor transistor of claim 5 , wherein at least one of the gate insulator, the etch stopper and the passivation layer is made up of an oxide or a metal oxide.
7. The oxide semiconductor transistor of claim 1 , wherein an oxide semiconductor layer has an amorphous or polycrystalline structure formed with any one of an indium gallium zinc oxide IGZO, a zinc oxide ZnO, an indium zinc oxide IZO, an indium tin oxide ITO, a zinc tin oxide ZTO, a gallium zinc oxide GZO, a hafnium indium zinc oxide HIZO, a zinc indium tin oxide ZITO and an aluminum zinc oxide AZTO.
8. An oxide semiconductor transistor used in a pixel element of a display device, the oxide semiconductor transistor comprising:
a substrate;
a first gate electrode located on the substrate;
a source electrode and a drain electrode located on the first gate electrode; and
a second gate electrode located on the source electrode and the drain electrode, wherein
the first gate electrode and the second gate electrode are located on the same axis,
a width of the second gate electrode is shorter than a width of the first gate electrode,
the first gate electrode is electrically connected to the second gate electrode,
the same voltage is applied to the first gate electrode and the second gate electrode, and
an offset indicating a distance between one terminal of the second gate electrode and the source electrode or a distance between another terminal of the second gate electrode and the drain electrode is 0.5μm to 5μm.
9. The oxide semiconductor transistor of claim 8 , wherein the width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.