Layout and operation of pixels for image sensors
Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.
1. An image sensor, comprising:
a first pixel electrode;
a second pixel electrode;
an optically sensitive layer overlying the first pixel electrode and the second pixel electrode; and
an optical filter continuously overlying the optically sensitive layer, the optical filter to provide substantially the same spectral response for light incident on the optically sensitive layer overlying the first pixel electrode and the second pixel electrode, the image sensor being configured to operate in at least two modes:
a first, unbinned, mode; and
a second, binned, mode;
in the first, unbinned mode, the first pixel electrode and the second pixel electrode are to be reset to substantially similar levels, and
in the second, binned mode, the first pixel electrode is to be reset to a high voltage that results in a collection of photocharge of a first efficiency, and second pixel electrode is to be reset to a low voltage that results in a collection of photocharge that is less efficient than the first efficiency.
2. The image sensor of claim 1 , wherein the optically sensitive layer that overlies the first pixel electrode and the second pixel electrode is pixellated.
3. The image sensor of claim 1 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 650 nm with a quantum efficiency exceeding about 70%.
4. The image sensor of claim 1 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 950 nm with a quantum efficiency exceeding about 50%.
5. An image sensor, comprising:
m pixel electrodes of a first class;
n pixel electrodes of a second class;
an optically sensitive layer overlying the m pixel electrodes and the n pixel electrodes; and
an optical filter continuously overlying the optically sensitive layer, the optical filter to provide substantially the same spectral response for light incident on the optically sensitive layer overlying the m pixel electrodes and the n pixel electrodes, the image sensor being configured to operate in at least two modes:
a first, unbinned, mode; and
a second, binned, mode;
in the first, unbinned mode, the m pixel electrodes and the n pixel electrodes of the first class and the second class, respectively, are to be reset to substantially similar levels; and
in the second, binned mode, the m pixel electrodes of the first class are to be reset to a high voltage that results in a collection of photocharge of a first efficiency, and the n pixel electrodes of the second class are to be reset to a low voltage that results in a collection of photocharge that is less efficient than the first efficiency.
6. The image sensor of claim 5 , wherein m is equal to 1 per color region, and n is equal to 3 per color region.
7. The image sensor of claim 5 , wherein the electrodes are laid out in a 2D hexagonal close-packed array.
8. The image sensor of claim 5 , wherein the electrodes are laid out in a 2D square close-packed array.
9. The image sensor of claim 5 , wherein m is equal to 1 per color region, and n is equal to 4 per color region.
10. The image sensor of claim 5 , wherein m is equal to 1 per color region, and n is equal to 6 per color region.
11. The image sensor of claim 5 , wherein the optically sensitive layer that overlies the m pixel electrodes and the n pixel electrodes is pixellated.
12. The image sensor of claim 5 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 650 nm with a quantum efficiency exceeding about 70%.
13. The image sensor of claim 5 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 950 nm with a quantum efficiency exceeding about 50%.
14. An image sensor, comprising:
a first pixel electrode;
a second pixel electrode;
an optically sensitive layer overlying the first pixel electrode and the second pixel electrode; and
an optical filter continuously overlying the optically sensitive layer, the optical filter to provide substantially the same spectral response for light incident on the optically sensitive layer overlying the first pixel electrode and the second pixel electrode, the image sensor being configured to operate in at least two modes:
a first, unbinned, mode; and
a second, binned, mode;
in the second, binned mode, charge collected by the first pixel electrode is, during a first period, to be switched into a charge store, and during a second period, to be switched to a low-impedance node.
15. The image sensor of claim 14 , wherein the optically sensitive layer that overlies the first pixel electrode and the second pixel electrode is pixellated.
16. The image sensor of claim 14 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 650 nm with a quantum efficiency exceeding about 70%.
17. The image sensor of claim 14 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 950 nm with a quantum efficiency exceeding about 50%.
18. An image sensor, comprising:
a first pixel electrode;
a second pixel electrode;
an optically sensitive layer overlying the first pixel electrode and the second pixel electrode; and
an optical filter continuously overlying the optically sensitive layer, the optical filter to provide substantially the same spectral response for light incident on the optically sensitive layer overlying the first pixel electrode and the second pixel electrode, the image sensor being configured to operate in at least two modes:
a first, unbinned, mode; and
a second, binned, mode;
in the second, binned mode, charge collected by a first pixel electrode, in a first submode, is to be switched into a first charge store, and, in a second submode, is to be switched to a second charge store; the first charge store having a capacitance at least two times smaller than that of the second charge store.
19. The image sensor of claim 18 , wherein the optically sensitive layer that overlies the first pixel electrode and the second pixel electrode is pixellated.
20. The image sensor of claim 18 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 650 nm with a quantum efficiency exceeding about 70%.
21. The image sensor of claim 18 , wherein the optically sensitive layer is capable of sensing light in the range of about 470 nm to about 950 nm with a quantum efficiency exceeding about 50%.
22. An image sensor having at least two color regions, the image sensor comprising:
a first pixel electrode;
a second pixel electrode;
an optically sensitive layer overlying the first pixel electrode and the second pixel electrode; and
an optical filter continuously overlying the optically sensitive layer, the optical filter to provide substantially the same spectral response for light incident on the optically sensitive layer overlying the first pixel electrode and the second pixel electrode, the image sensor being configured to operate in the at least two modes:
a first, unbinned, mode; and
a second, binned, mode;
in the first, unbinned mode, the first pixel electrode and the second pixel electrode per color region are to be reset to substantially similar levels; and
in the second, binned mode, the first pixel electrode is to be reset to a high voltage that results in a collection of photocharge of a first efficiency, and the second pixel electrode is to be reset to a low voltage that results in a collection of photocharge that is less efficient than the first efficiency.
23. The image sensor of claim 22 , further comprising:
overlying the first color region is an optically sensitive layer capable of sensing light in a first spectral range with a quantum efficiency exceeding about 80%, and further capable of sensing light in a second spectral range with a quantum efficiency less than about 20%; and
overlying the second color region is an optically sensitive layer capable of sensing light in the first spectral range with a quantum efficiency less than about 20%, and further capable of sensing light in the second spectral range with a quantum efficiency greater than about 80%.
24. The image sensor of claim 22 , further comprising:
overlying the first color region is an optically sensitive layer capable of sensing light in a first spectral range with a quantum efficiency exceeding about 80%, and further capable of sensing light in a second spectral range with quantum efficiency less than about 20%; and
overlying the second color region is an optically sensitive layer capable of sensing light in the first spectral range with a quantum efficiency less than about 20%, and further capable of sensing light in the second spectral range with a quantum efficiency greater than about 80%.