Method of forming thin film transistor array substrate

1. A method of forming an organic light emitting diode (OLED) display device, the method comprising:

forming a planarization film on a substrate in an emission region and a non-emission region to include an opening in the non-emission region;

forming a first bank pattern on the substrate and in the emission region, the first bank pattern having a portion in the opening of the planarization film in the non-emission region;

forming a second bank pattern on the first bank pattern, the second bank pattern having a portion in the opening of the planarization film in the non-emission region,

wherein a bottom surface of the portion of the second bank pattern is wider than a top surface of the portion of the second bank pattern; and

forming an organic emission layer on the substrate in the emission region.

2. The method according to claim 1 , wherein the portion of the first bank pattern included in the opening of the planarization film is a concave portion, and the portion of the second bank pattern is formed above the concave portion of the first bank pattern.

3. The method according to claim 2 , wherein a center of the portion of the second bank pattern is horizontally aligned with a center of the opening of the planarization film.

4. The method according to claim 3 , wherein the bottom surface of the portion of the second bank pattern that is wider than the top surface of the portion of the second bank pattern is positioned above a part of each of first and second color filter patterns.

5. The method according to claim 1 , further comprising:

forming a color filter layer directly below the first bank pattern in the non-emission region, the color filter layer including color filter patterns,

wherein a boundary region between the color filter patterns is below the opening of the planarization film.

6. The method according to claim 5 , wherein the planarization film is not disposed above the boundary region between the color filter patterns.

7. The method according to claim 5 , wherein the first bank pattern includes a concave portion to contact a thin portion of the planarization film that is in the opening of the planarization film.

8. The method according to claim 1 , further comprising:

forming a thin film transistor on the substrate in another non-emission region;

forming a first electrode on the thin film transistor; and

forming a contact hole in the another non-emission region to connect the first electrode to the thin film transistor.

9. The method according to claim 8 , wherein another portion of each of the first and second bank patterns is disposed on the first electrode in the contact hole.

10. The method according to claim 9 , wherein an edge of the concave portion of the first bank pattern formed in the non-emission region overlaps the first electrode at a side of the emission region, and an edge of another concave portion of the first bank pattern formed in the another non-emission region overlaps the first electrode at another side of the emission region.

11. A method of forming an organic light emitting diode (OLED) display device, the method comprising:

forming a first bank pattern on a substrate and in an emission region and a non-emission region;

forming a second bank pattern on the first bank pattern;

forming an organic emission layer on the substrate in the emission region;

forming a planarization film on the substrate to include an opening under the first and second bank patterns in the non-emission region; and

forming a color filter layer directly below the first bank pattern in the non-emission region, the color filter layer including color filter patterns,

wherein the second bank pattern is on the first bank pattern in the non-emission region, and the first bank pattern is in the opening of the planarization film in the non-emission region, and

wherein a boundary region between the color filter patterns is below the opening of the planarization film.