Display device including a photoluminescent panel and a magnetic anisotropy barrier wall; and method of manufacturing the display device
A display device includes a first substrate including a first surface and a second surface, a second substrate disposed on the second surface of the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, a color conversion layer disposed on the second substrate, and a third substrate disposed on the color conversion layer. The second surface of the first substrate is opposite the first surface of first substrate. The color conversion layer includes a magnetic anisotropy barrier wall.
1. A display device, comprising:
a first substrate comprising a first surface and a second surface;
a second substrate disposed on the second surface of the first substrate,
a liquid crystal layer disposed between the first substrate and the second substrate;
a color conversion layer disposed on the second substrate; and
a third substrate disposed on the color conversion layer,
wherein the second surface of the first substrate is opposite the first surface of first substrate and the color conversion layer comprises a magnetic anisotropy barrier wall.
2. The display device of claim 1 , wherein the magnetic anisotropy barrier wall comprises at least one of alnico, barium ferrite, vicalloy, and manganese aluminum.
3. The display device of claim 1 , wherein the magnetic anisotropy barrier wall is aligned perpendicular to a surface of the second substrate.
4. The display device of claim 3 , wherein the color conversion layer further comprises a photo-excited member.
5. The display device of claim 4 , wherein the photo-excited member is disposed in a lower portion of the color conversion layer compared to the magnetic anisotropy barrier wall.
6. The display device of claim 4 , wherein the photo-excited member is disposed in an upper portion of the color conversion layer compared to the magnetic anisotropy barrier wall.
7. The display device of claim 4 , wherein the photo-excited members and the magnetic anisotropy barrier walls are uniformly distributed in the color conversion layer.
8. The display device of claim 4 , further comprising a light blocking member on one of the first substrate, the second substrate, and the third substrate.
9. The display device of claim 8 , wherein the photo-excited member comprises at least two materials selected from the group consisting of a green phosphor, a red phosphor, and a yellow phosphor.
10. The display device of claim 8 , wherein the photo-excited member comprises at least two materials selected from the group consisting of a green quanutm dot, a red quanutm dot, and a blue quanutm dot.
11. The display device of claim 10 , wherein the photo-excited member comprises at least one one of cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and indium arsenide (InAs).
12. The display device of claim 10 , wherein the photo-excited member has a core-shell structure comprising a shell covering a core,
wherein the core comprises at least one of cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), cadmium selenium telluride (CdSeTe), cadmium zinc sulfide (CdZnS), cadmium selenium sulfide (CdSeS), lead selenide (PbSe), lead sulfide (PbS), lead telluride (PbTe), silver indium zinc sulfide (AgInZnS), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), indium zinc phosphide (InZnP), indium gallium phosphide (InGaP), indium gallium nitride (InGaN), indium arsenide (InAs), and zinc oxide (ZnO), and
the shell comprises at least one of cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), cadmium oxide (CdO), zinc sulfide (ZnS), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc oxide (ZnO), indium phosphide (InP), indium sulfide (InS), gallium phosphide (GaP), gallium nitride (GaN), gallium oxide (GaO), indium zinc phosphide (InZnP), indium gallium phosphide (InGaP), indium gallium nitride (InGaN), indium zinc sulfide cadmium selenide (InZnSCdSe), lead sulfide (PbS), titanium oxide (TiO), strontium selenide (SrSe), and mercury selenide (HgSe).
13. The display device of claim 8 , further comprising an optical filter layer disposed between the color conversion layer and the second substrate.
14. The display device of claim 13 , further comprising a backlight disposed on the first surface of the first substrate.
15. The display device of claim 14 , wherein the color conversion layer further comprises a light scattering member.
16. A method of manufacturing a display device, the method comprising:
forming a light blocking pattern having color regions spaced apart from one another on a substrate;
forming a photo-excited pattern comprising a photo-excited member and a magnetic anisotropy barrier wall among the color regions;
forming a planarization layer on the photo-excited pattern; and
aligning the magnetic anisotropy barrier wall to be perpendicular to the substrate.
17. The method of claim 16 , further comprising forming an optical filter layer on the planarization layer.
18. The method of claim 16 , wherein the magnetic anisotropy barrier wall comprises at least one of alnico, barium ferrite, vicalloy, and manganese aluminum.
19. The method of claim 16 , wherein forming the photo-excited pattern comprises forming the photo-excited member in a lower portion of the photo-excited pattern compared to the magnetic anisotropy barrier wall.
20. The method of claim 16 , wherein forming the photo-excited pattern comprises forming the photo-excited member in an upper portion of the photo-excited pattern compared to the magnetic anisotropy barrier wall.