Semiconductor device and method for manufacturing same
According to the embodiment, the semiconductor device includes: a substrate; a stacked body; and a plurality of columnar portions. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The stacked body includes a stacked portion and a staircase portion. The plurality of electrode layers includes a first portion and a second portion. The columnar portions are provided in the stacked portion of the stacked body. The columnar portions extend in a stacking direction of the stacked body. The columnar portions include a semiconductor body extending in the stacking direction and a charge storage film. The second portion includes a third portion. A thickness of the third portion along the stacking direction is thinner than a thickness of the first portion along the stacking direction.
1. A semiconductor device, comprising:
a substrate;
a stacked body provided on the substrate,
the stacked body including a plurality of electrode layers stacked with an insulator interposed,
the stacked body including a stacked portion and a staircase portion,
the staircase portion provided outside the stacked portion,
the plurality of electrode layers including a first portion and a second portion,
the first portion provided in the stacked portion,
the second portion provided in the staircase portion,
the second portion stacked in a staircase pattern in the staircase portion; and
a plurality of columnar portions provided in the stacked portion of the stacked body,
the plurality of columnar portions extending in a stacking direction of the stacked body,
the plurality of columnar portions including a semiconductor body extending in the stacking direction, and a charge storage film,
the charge storage film provided between the semiconductor body and the plurality of electrode layers, wherein
the second portion of the electrode layers includes a third portion, and
a thickness of the third portion of the electrode layers along the stacking direction of the stacked body is thinner than a thickness of the first portion of the electrode layers along the stacking direction of the stacked body.
2. The semiconductor device according to claim 1 , wherein, the third portion is provided in an entire area of the staircase portion.
3. The semiconductor device according to claim 1 , wherein, the third portion is provided in a portion of the staircase portion.
4. The semiconductor device according to claim 1 , including a first insulating film provided between the third portion of the electrode layers and the insulator.
5. The semiconductor device according to claim 1 , further comprising a contact portion provide on the staircase portion, wherein
the contact portion is electrically connected to the second portion of the electrode layers.
6. The semiconductor device according to claim 1 , including a plurality of support pillars provided in the staircase portion, wherein
an array density of the plurality of support pillars is lower than an array density of the plurality of columnar portions.
7. The semiconductor device according to claim 6 , wherein the third portion of the electrode layers is provided around the support pillars.
8. The semiconductor device according to claim 7 , wherein
at least one of the support pillar includes a flange portion, and
the flange portion is provided to correspond to the third portion of the electrode layers.
9. The semiconductor device according to claim 8 , including a second insulating film between the third portion of the electrode layers and the flange portion of the support pillars.
10. The semiconductor device according to claim 9 , wherein
the second insulating film and the insulator include silicon oxide, and
a film density of the insulating film is higher than a film density of the insulator.
11. The semiconductor device according to claim 1 , wherein
the first portion of the electrode layers includes a fourth portion around the columnar portions,
a thickness of the fourth portion of the electrode layers along the stacking direction of the stacked body is
thinner than the thickness of the first portion of the electrode layers along the stacking direction of the stacked body, and
equal to the thickness of the third portion of the electrode layers along the stacking method of the stacked body.
12. The semiconductor device according to claim 11 , including a third insulating film provided between the fourth portion of the electrode layers and the insulator.
13. The semiconductor device according to claim 1 , wherein
the insulator of the stacked body includes a fifth portion provided in the stacked portion, and a sixth portion provided in the staircase portion and stacked in a staircase pattern in the staircase portion,
the sixth portion of the insulator includes a seven portion, and
a thickness of the seventh portion of the insulator along the stacking direction of the stacked body is thicker than a thickness of the fifth portion of the insulator along the stacking direction of the stacked body.
14. The semiconductor device according to claim 13 , wherein, the seventh portion is provided in an entire area of the staircase portion.
15. The semiconductor device according to claim 13 , wherein, the seventh portion is provided in a portion of the staircase portion.
16. The semiconductor device according to claim 13 , wherein
the seventh portion of the insulator includes a fourth insulating film, and
the fourth insulating film is provided in contact with the electrode layers.