IP Library › Granted Patent US 9,831,211
Granted Patent B2
US 9,831,211 · App. 15/015,758 · Granted Nov 28, 2017

Anisotropic conductive material, electronic device including anisotropic conductive material, and method of manufacturing electronic device

Inventors: Kunmo Chu (Seoul, KR); Wonsuk Chang (Hwaseong-si, KR); Chanmoon Chung (Wonju-si, KR)
Assignees: Samsung Electronics Co., Ltd.; Yonsei University Wonju Industry-Academic Cooperation Foundation
H01L24/33H01B1/22H01L23/5328H01L23/53276H01L24/09H01L24/29H01R4/04H01L2224/29028H01L2224/2949H01L2224/2957H01L2224/29105H01L2224/29198H01L2224/29393H01L2224/29394H01L2224/29691H01L2224/32227H01L2924/01006H01L2924/0132H01L2924/0133H01L2924/0134H01L2924/1426H01R13/2414
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Quick Facts
Patent No.
US 9,831,211
App. No.
15/015,758
Granted
Nov 28, 2017
Kind
B2
Abstract

Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15° C. and less than or equal to about 110° C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

Claims (63)

1. An anisotropic conductive material comprising:

a matrix material layer; and

a plurality of particles in the matrix material layer,

at least some of the particles having a capsule structure including a conductive core portion and an insulating shell portion,

the conductive core portion including a conductive material that is in a liquid state at a temperature greater than about 15° C. and less than or equal to about 110° C., wherein

the insulating shell portion includes a polymer or a ceramic, and

the polymer has an elastic modulus of about 0.3 GN/m 2 to about 35 GN/m 2 .

2. The anisotropic conductive material of claim 1 , wherein the conductive material includes a liquid metal.

3. The anisotropic conductive material of claim 2 , wherein the liquid metal includes at least one of gallium (Ga), a gallium-indium (Ga—In) alloy, a gallium-indium-tin (Ga—In—Sn) alloy, and a gallium-indium-tin-zinc (Ga—In—Sn—Zn) alloy.

4. The anisotropic conductive material of claim 2 , wherein the conductive material further includes nanofillers contained in the liquid metal.

5. The anisotropic conductive material of claim 4 , wherein the nanofillers includes at least one of a carbon nanotube (CNT), a carbon nanofiber (CNF), a carbon black, a fullerene, a graphene flake, a graphene particle, a metal nanowire, and a metal nanoparticle.

6. The anisotropic conductive material of claim 1 , wherein the conductive material includes a suspension containing nanofillers.

7. The anisotropic conductive material of claim 6 , wherein the nanofillers include at least one of a carbon nanotube (CNT), a carbon nanofiber (CNF), a carbon black, a fullerene, a graphene flake, a graphene particle, a metal nanowire, and a metal nanoparticle.

8. The anisotropic conductive material of claim 1 , wherein the conductive material includes a solder having a melting point of about 110° C. or less.

9. The anisotropic conductive material of claim 8 , wherein the solder includes at least one of a bismuth-indium (Bi—In)-based alloy, a bismuth-tin (Bi—Sn)-based alloy, an indium-bismuth (In—Bi)-based alloy, a bismuth-indium-tin (Bi—In—Sn)-based alloy, an indium-bismuth-tin (In—Bi—Sn)-based alloy, and an indium-tin-zinc (In—Sn—Zn)-based alloy.

10. The anisotropic conductive material of claim 1 , wherein the insulating shell portion has a thickness of about 30 nm to about 200 nm.

11. The anisotropic conductive material of claim 1 , wherein the particles have a diameter of about 1 μm to about 100 μm.

12. The anisotropic conductive material of claim 1 , further comprising: at least one self-healing capsule in the matrix material layer.

13. The anisotropic conductive material of claim 12 , wherein the self-healing capsule includes an underfill material.

14. An electronic device comprising:

the anisotropic conductive material of claim 1 ;

a first member;

a second member;

a structure electrically connecting the first member the second member using the anisotropic conductive material.

15. An electronic device comprising:

a first member including at least one first electrode portion;

a second member including at least one second electrode portion, the second member facing the first member; and

the anisotropic conductive material of claim 1 between the first member and the second member,

the insulating shell portion of at least one of the particles being broken between the first electrode portion and the second electrode portion such that the insulating shell portion forms a broken shell portion and the conductive core portion forms an outflowed core portion that is outflowed to an outside of the broken shell portion, and the first electrode portion and the second electrode portion are electrically connected by the outflowed core portion.

16. The electronic device of claim 15 , wherein the conductive material includes a liquid metal.

17. The electronic device of claim 16 , wherein the conductive material further includes nanofillers contained in the liquid metal.

18. The electronic device of claim 15 , wherein the conductive material includes a suspension containing nanofillers.

19. The electronic device of claim 17 , wherein the nanofillers include at least one of a carbon nanotube (CNT), a carbon nanofiber (CNF), a carbon black, a fullerene, a graphene flake, a graphene particle, a metal nanowire, and a metal nanoparticle.

20. The electronic device of claim 15 , wherein the conductive material includes a solder having a melting point of about 110° C. or less.

21. The electronic device of claim 15 , further comprising:

an intermetallic compound, wherein

the intermetallic compound is between at least one of

the first electrode portion and the outflowed core portion, and

the second electrode portion and the outflowed core portion.

22. The electronic device of claim 15 , wherein

the insulating shell portion includes a polymer or a ceramic, and

the polymer has an elastic modulus of about 0.3 GN/m 2 to about 35 GN/m 2 .

23. The electronic device of claim 15 , wherein the insulating shell portion has a thickness of about 30 nm to about 200 nm.

24. The electronic device of claim 15 , wherein the particles have a diameter of about 1 μm to about 100 μm.

25. The electronic device of claim 15 , wherein the anisotropic conductive material further includes at least one self-healing capsule.

26. The electronic device of claim 15 , wherein

the first member includes a substrate, and

the second member includes a semiconductor chip.

27. The electronic device of claim 15 , wherein

the first member includes a substrate or a panel, and

the second member includes a driver integrated circuit (IC) or a driver IC package.

28. The electronic device of claim 15 , wherein the electronic device includes a display device.

29. An electronic device comprising:

a first member including at least one first electrode portion;

a second member including at least one second electrode portion, the second member facing the first member; and

the anisotropic conductive material of claim 1 between the first member and the second member, the anisotropic conductive material electrically connecting the first electrode portion to the second electrode portion,

the conductive core portion of the anisotropic conductive material including a metallic material,

the metallic material being between the first electrode portion and the second electrode portion; and

an intermetallic compound between the metallic material and at least one of the first electrode portion and the second electrode portion.

30. The electronic device of claim 29 , wherein

the insulating shell portion of at least one of the particles is broken between the first electrode portion and the second electrode portion such that the insulating shell portion forms a broken shell portion and the conductive core portion forms an outflowed core portion that is outflowed to an outside of the broken shell portion, and the first electrode portion and the second electrode portion are electrically connected by the outflowed core portion,

the outflowed core portion includes the metallic material, and

the intermetallic compound is between the outflowed core portion and at least one of the first electrode portion and the second electrode portion.

Assignments (3)
NUNC PRO TUNC ASSIGNMENT Recorded Jun 14, 2017
From: CHU, KUNMO; CHANG, WONSUK; CHUNG, CHANMOON
To: SAMSUNG ELECTRONICS CO., LTD.; YONSEI UNIVERSITY WONJU INDUSTRY-ACADEMIC COOPERATION FOUNDATION
Reel/Frame 042710/0907 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2016
From: CHU, KUNMO; CHANG, WONSUK
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 037676/0720 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2016
From: CHUNG, CHANMOON
To: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
Reel/Frame 037676/0788 →
Priority Claims (1)
KR 10-2015-0123207 · Aug 31, 2015 · national
Continuity (1)
Related Publication 20170062374A1 · Mar 2, 2017