IP Library › Granted Patent US 9,832,914
Granted Patent B2
US 9,832,914 · App. 15/010,618 · Granted Nov 28, 2017

Structure for shielding electronomagnetic waves

Inventors: Soon Young Hyun (Seoul, KR); Seok Bae (Seoul, KR); Hyung Yoon (Seoul, KR); Yong Jae Kwon (Seoul, KR); Hyung Eui Lee (Seoul, KR)
Assignee: LG INNOTEK CO., LTD.
H05K9/0024C23C18/1653C23C18/38C25D5/12H05K9/003H05K9/0045
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Quick Facts
Patent No.
US 9,832,914
App. No.
15/010,618
Granted
Nov 28, 2017
Kind
B2
Abstract

A structure and a device may include an electromagnetic wave generator configured to generate electromagnetic waves; a shielding structure configured to surround at least a portion of the electromagnetic wave generator; and a metal layer provided on inner surfaces of upper and side portions of the shielding structure, wherein the metal layer having a predetermined surface roughness.

Claims (33)

1. A structure for shielding electromagnetic waves comprising:

an electromagnetic wave generator configured to generate electromagnetic waves;

a shielding structure configured to surround at least a portion of the electromagnetic wave generator; and

a metal layer provided on inner surfaces of upper and side portions of the shielding structure, the metal layer having a predetermined surface roughness,

wherein the surface roughness of the inner surface of the upper portion of the shielding structure is in a range of 5.0 to 7.0 μm, and the surface roughness of the inner surface of the side portion of the shielding structure is in a range of 0.1 to 3.0 μm,

wherein the surface roughness of the upper portion of the shielding structure and the surface roughness of the side portion of the shielding structure are different from each other, and

wherein the shielding structure has an electromagnetic wave shielding efficiency in a range of 72.1˜75.4 for electromagnetic waves having a frequency band of 30 MHz to 1 GHz, and the shielding structure has an electromagnetic wave shielding efficiency in a range of 28.3˜33.4 for electromagnetic waves having a frequency band of 1.1 GHz˜10 GHz.

2. The structure for shielding electromagnetic waves of claim 1 , wherein a thickness of the metal layer is in a range of 1 to 10 μm.

3. The structure for shielding electromagnetic waves of claim 2 , wherein a surface roughness is formed on the inner surfaces of the upper and side portions of the shielding structure.

4. The structure for shielding electromagnetic waves of claim 2 , wherein the surface roughness is formed by patterning the metal layer.

5. The structure for shielding electromagnetic waves of claim 1 , wherein the metal layer includes a first metal layer and a second metal layer provided on the first metal layer.

6. The structure for shielding electromagnetic waves of claim 5 , wherein the first metal layer includes Cu, and the second metal layer includes at least one of Cu and Ni.

7. The structure for shielding electromagnetic waves of claim 1 , wherein the metal layer includes at least one of an electroless Cu plated layer, an electro Cu plated layer, and electro Ni plated layer.

8. An electronic device, comprising:

a printed circuit board;

an electronic component mounted on the printed circuit board and configured to generate electromagnetic waves;

a shielding structure configured to surround at least a portion of the electronic component; and

a metal layer provided on inner surfaces of upper and side portions of the shielding structure, the metal layer having a predetermined surface roughness,

wherein the surface roughness of the inner surface of the upper portion of the shielding structure is in a range of 5.0 to 7.0 μm and the surface roughness of the inner surface of the side portion of the shielding structure is in a range of 0.1 to 3.0 μm,

wherein the surface roughness of the upper portion of the shielding structure and the surface roughness of the side portion of the shielding structure are different from each other, and

wherein the shielding structure has an electromagnetic wave shielding efficiency in a range of 72.1˜75.4 for electromagnetic waves having a frequency band of 30 MHz to 1 GHz, and the shielding structure has an electromagnetic wave shielding efficiency in a range of 28.3˜33.4 for electromagnetic waves having a frequency band of 1.1 GHz˜10 GHz.

9. The electronic device of claim 8 , wherein a thickness of the metal layer is in a range of 1 to 10 μm.

10. The electronic device of claim 8 , wherein a surface roughness is formed on the inner surfaces of the upper and side portions of the shielding structure.

11. The electronic device of claim 8 , wherein a surface roughness is formed by patterning the metal layer.

12. The electronic device of claim 8 , wherein the metal layer includes a first metal layer and a second metal layer formed on the first metal layer.

13. An electromagnetic wave shield, comprising:

a shield configured to surround at least a portion of an electromagnetic wave generator that generates electromagnetic waves;

a first metal layer having a first predetermined surface roughness provided on an inner surface of an upper portion of the shield; and

a second metal layer having a second predetermined surface roughness provided on an inner surface of a side portion of the shield,

wherein the first predetermined surface roughness of the inner surface of the upper portion of the shield is in a range of 5.0 to 7.0 μm, and the second predetermined surface roughness of the inner surface of the side portion of the shield is in a range of 0.1 to 3.0 μm,

wherein the surface roughness of the upper portion of the shield and the surface roughness of the side portion of the shield are different from each other, and

wherein the shielding structure has an electromagnetic wave shielding efficiency in a range of 72.1˜75.4 for electromagnetic waves having a frequency band of 30 MHz to 1 GHz, and the shielding structure has an electromagnetic wave shielding efficiency in a range of 28.3˜33.4 for electromagnetic waves having a frequency band of 1.1 GHz˜10 GHz.

14. The electromagnetic wave shield of claim 13 , wherein a thickness of the first metal layer and a thickness of the second metal layer is in a range of 1 to 10 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2016
From: BAE, SEOK; YOON, HYUNG; KWON, YONG JAE; LEE, HYUNG EUI
To: LG INNOTEK CO., LTD.
Reel/Frame 038448/0873 →
Priority Claims (1)
KR 10-2015-0014374 · Jan 29, 2015 · national
Continuity (1)
Related Publication 20160227680A1 · Aug 4, 2016