IP Library Granted Patent US 9,835,947
Granted Patent B2
US 9,835,947 · App. 15/256,990 · Granted Dec 5, 2017

Self-organization material and pattern formation method

Inventors: Yuriko Seino (Tokyo, JP); Naoko Kihara (Kanagawa, JP)
Assignee: Kabushiki Kaisha Toshiba
G03F7/165B81C1/00031B82Y30/00B82Y40/00C09D133/12C09D153/00C09D183/10G03F7/002G03F7/0035G03F7/11G03F7/40H01L21/0275H01L21/02118H01L21/30604H01L21/31138H01L21/31144B81C2201/0149C08G77/44
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Quick Facts
Patent No.
US 9,835,947
App. No.
15/256,990
Granted
Dec 5, 2017
Kind
B2
Abstract

A self-organization material according to an embodiment includes a block copolymer and a top coat material. The block copolymer contains a first block and a second block. The second block has a surface free energy higher than that of the first block. The top coat material contains a first portion having a surface free energy higher than that of the first block and lower than that of the second block, and a second portion having a surface free energy lower than that of the first block. The first portion is one of a homopolymer miscible with both the first block and the second block, and a random copolymer having a repeating unit of the first block and a repeating unit of the second block. The second portion is one of an organic siloxane-containing polymer and a fluorine-containing polymer.

Claims (31)

1. A self-organization material comprising:

a block copolymer containing a first block and a second block, the second block having a surface free energy higher than a surface free energy of the first block;

a top coat material which contains a first portion having a surface free energy higher than that of the first block and lower than that of the second block, and a second portion having a surface free energy lower than that of the first block, the first portion being one of a homopolymer miscible with both the first block and the second block, and a random copolymer having a repeating unit of the first block and a repeating unit of the second block, and the second portion being one of an organic siloxane-containing polymer and a fluorine-containing polymer.

2. The self-organization material according to claim 1 , wherein the first block is composed of polystyrene, and the second block is composed of polyvinylpyridine.

3. The self-organization material according to claim 1 , wherein the first portion is a random copolymer having the repeating unit of the first block and the repeating unit of the second block, and the second portion is one of the organic siloxane-containing polymer and the fluorine-containing polymer.

4. The self-organization material according to claim 3 , wherein the first block is composed of polystyrene, and the second block is composed of polyvinylpyridine.

5. The self-organization material according to claim 1 , wherein the second portion is polydimethylsiloxane.

6. The self-organization material according to claim 1 , wherein the second portion is a material selected from the group consisting of perfluoropolyether, polymethacrylate substituted by a fluorine-substituted alkyl group, and polystyrene substituted by a fluorine-substituted alkyl group.

7. The self-organization material according to claim 1 , wherein the first portion is a homopolymer composed of methacrylic ester, and the second portion is a material selected from the group consisting of perfluoropolyether and polystyrene substituted by a fluorine-substituted alkyl group.

8. The self-organization material according to claim 7 , wherein the first block is composed of polystyrene, and the second block is composed of polyvinylpyridine.

9. The self-organization material according to claim 1 , wherein the second portion is a material selected from the group consisting of compounds represented by formulas (I), (II), and (III) below:

HOCH 2 CF 2 O(CF 2 CF 2 O) p (CF 2 O) q CF 2 CH 2 OH  (I)

HOOCCF 2 O(CF 2 CF 2 O) m (CFO) n CF 2 COOH  (II)

OCNC 6 H 3 (CH 3 )NHCOCF 2 O(CF 2 CF 2 O) m (CF 2 O) n CF 2 CONH—C 6 H 3 (CH 3 )—NCO  (III).

10. A pattern formation method comprising:

forming a layer of the self-organization material according to claim 1 on a substrate;

causing first phase separation of the self-organization material into a phase of the block copolymer and a phase of the top coat material to form a first layer containing the block copolymer and a second layer positioned above the first layer and containing the top coat material, and causing second phase separation of the block copolymer into a phase of the first block and a phase of the second block to form a lamella structure in which the phase of the first block and the phase of the second block are alternately arranged in a direction parallel to a surface of the substrate; and

removing the second layer and one of the phase of the first block and the phase of the second block.

11. The method according to claim 10 , wherein the first phase separation and the second phase separation are caused by heat-treating the layer of the self-organization material.

12. The method according to claim 10 , further comprising, before forming the layer of the self-organization material, forming, on the substrate, an undercoating layer of a material having a surface free energy higher than the surface free energy of the first block and lower than the surface free energy of the second block.

13. The method according to claim 10 , wherein the first block is composed of polystyrene, and the second block is composed of polyvinylpyridine.

14. The method according to claim 10 , wherein the first portion is a random copolymer having the repeating unit of the first block and the repeating unit of the second block, and the second portion is one of the organic siloxane-containing polymer and the fluorine-containing polymer.

15. The method according to claim 14 , wherein the first block is composed of polystyrene, and the second block is composed of polyvinylpyridine.

16. The method according to claim 10 , wherein the second portion is polydimethylsiloxane.

17. The method according to claim 10 , wherein the second portion is a material selected from the group consisting of perfluoropolyether, polymethacrylate substituted by a fluorine-substituted alkyl group, and polystyrene substituted by a fluorine-substituted alkyl group.

18. The method according to claim 10 , wherein the first portion is a homopolymer composed of methacrylic ester, and the second portion is a material selected from the group consisting of perfluoropolyether and polystyrene substituted by a fluorine-substituted alkyl group.

19. The method according to claim 18 , wherein the first block is composed of polystyrene, and the second block is composed of polyvinylpyridine.

20. The method according to claim 10 , wherein the second portion is a material selected from the group consisting of compounds represented by formulas (I), (II), and (III) below:

HOCH 2 CF 2 O(CF 2 CF 2 O) p (CF 2 O) q CF 2 CH 2 OH  (I)

HOOCCF 2 O(CF 2 CF 2 O) m (CFO) n CF 2 COOH  (II)

OCNC 6 H 3 (CH 3 )NHCOCF 2 O(CF 2 CF 2 O) m (CF 2 O) n CF 2 CONH—C 6 H 3 (CH 3 )—NCO  (III).

Assignments (4)
MERGER Recorded Jan 31, 2020
From: TOSHIBA MEMORY CORPORATION; K.K PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051679/0042 →
DE-MERGER Recorded Jan 31, 2020
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051762/0119 →
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2020
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 051762/0197 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2016
From: SEINO, YURIKO; KIHARA, NAOKO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 040134/0920 →
Priority Claims (1)
JP 2015-180040 · Sep 11, 2015 · national
Continuity (1)
Related Publication 20170073542A1 · Mar 16, 2017