Semiconductor device comprising oxide conductor and display device including the semiconductor device
The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.
1. A semiconductor device comprising a transistor, the transistor comprising:
an oxide semiconductor film, the oxide semiconductor film comprising:
a source region;
a drain region; and
a channel region between the source region and the drain region,
a gate insulating film over the oxide semiconductor film;
an oxide conductor over the gate insulating film; and
a first insulating film over the oxide semiconductor film and the oxide conductor,
wherein the first insulating film is directly in contact with a top surface of the source region, a top surface of the drain region, and a side surface of the oxide conductor,
wherein the oxide conductor includes at least oxygen, In, Zn, and M (M is Al, Ga, Y, or Sn), and
wherein the oxide conductor has a higher carrier density than the oxide semiconductor film.
2. The semiconductor device according to claim 1 , further comprising a conductive film between the oxide conductor and the first insulating film,
wherein the first insulating film is in contact with top and side surfaces of the conductive film.
3. The semiconductor device according to claim 1 , wherein an upper end portion of the gate insulating film is aligned with a lower end portion of the oxide conductor or positioned outside the lower end portion of the oxide conductor.
4. The semiconductor device according to claim 1 , wherein the first insulating film contains at least one of nitrogen and hydrogen.
5. The semiconductor device according to claim 1 , the transistor further comprising:
a second insulating film over the first insulating film;
a source electrode connected to the source region through a first opening in the first insulating film and the second insulating film; and
a drain electrode connected to the drain region through a second opening in the first insulating film and the second insulating film.
6. The semiconductor device according to claim 1 , wherein the source region and the drain region each include a region with the same hydrogen concentration as the oxide conductor.
7. The semiconductor device according to claim 1 , wherein the source region and the drain region each contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, and a rare gas.
8. The semiconductor device according to claim 1 , wherein the oxide semiconductor film includes at least oxygen, In, Zn, and M (M is Al, Ga, Y, or Sn).
9. The semiconductor device according to claim 1 ,
wherein at least one of the oxide semiconductor film and the oxide conductor contains a crystal part, and
wherein the crystal part has c-axis alignment.
10. A display device comprising:
the semiconductor device according to claim 1 ; and
a display element.
11. A display module comprising:
the display device according to claim 10 ; and
a touch sensor.
12. An electronic appliance comprising:
the semiconductor device according to claim 1 ; and
an operation key or a battery.
13. A semiconductor device comprising a transistor, the transistor comprising:
a first conductive film;
a first insulating film over the first conductive film;
a first oxide semiconductor film, the first oxide semiconductor film comprising:
a source region;
a drain region; and
a channel region between the source region and the drain region,
a gate insulating film over the first oxide semiconductor film;
an oxide conductor over the gate insulating film; and
a second insulating film over the first oxide semiconductor film and the oxide conductor,
wherein the oxide conductor includes at least oxygen, In, Zn, and M (M is Al, Ga, Y, or Sn), and
wherein the oxide conductor has a higher carrier density than the first oxide semiconductor film.
14. The semiconductor device according to claim 13 , wherein the second insulating film is in contact with a top surface of the source region, a top surface of the drain region, and a side surface of the oxide conductor.
15. The semiconductor device according to claim 13 , further comprising a second conductive film between the oxide conductor and the first insulating film,
wherein the second insulating film is in contact with top and side surfaces of the second conductive film.
16. The semiconductor device according to claim 13 , wherein the first conductive film is connected to the oxide conductor through a first opening in the first insulating film and the gate insulating film.
17. The semiconductor device according to claim 13 , further comprising:
a second oxide semiconductor film over the first oxide semiconductor film.
18. The semiconductor device according to claim 17 , further comprising:
a third oxide semiconductor film over the second oxide semiconductor film.
19. The semiconductor device according to claim 13 , wherein an upper end portion of the gate insulating film is aligned with a lower end portion of the oxide conductor or positioned outside the lower end portion of the oxide conductor.
20. The semiconductor device according to claim 13 , wherein the second insulating film contains at least one of nitrogen and hydrogen.
21. The semiconductor device according to claim 13 , the transistor further comprising:
a third insulating film over the second insulating film;
a source electrode connected to the source region through a second opening in the second insulating film and the third insulating film; and
a drain electrode connected to the drain region through a third opening in the second insulating film and the third insulating film.
22. The semiconductor device according to claim 13 , wherein the source region and the drain region each include a region with the same hydrogen concentration as the oxide conductor.
23. The semiconductor device according to claim 13 , wherein the source region and the drain region each contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, and a rare gas.
24. The semiconductor device according to claim 13 , wherein the first oxide semiconductor film includes at least oxygen, In, Zn, and M (M is Al, Ga, Y, or Sn).
25. The semiconductor device according to claim 13 ,
wherein at least one of the first oxide semiconductor film and the oxide conductor contains a crystal part, and
wherein the crystal part has c-axis alignment.
26. A display device comprising:
the semiconductor device according to claim 13 ; and
a display element.
27. A display module comprising:
the display device according to claim 26 ; and
a touch sensor.
28. An electronic appliance comprising:
the semiconductor device according to claim 13 ; and
an operation key or a battery.