Method of enabling seamless cobalt gap-fill

1. A method for depositing a contact metal layer for forming a contact structure in a semiconductor device, comprising:

performing a barrier layer deposition process to deposit a barrier layer on a substrate the performing a barrier layer deposition process comprises depositing a TiN barrier layer;

performing a wetting layer deposition process to deposit a wetting layer on the barrier layer;

performing an annealing process on the wetting layer;

performing a PVD metal deposition process to deposit a contact metal layer on the wetting layer by exposing the wetting layer to a process gas to deposit a portion of the contact metal layer on the substrate, wherein the performing the PVD metal deposition process comprises depositing a PVD Co layer, and the PVD Co layer is sputtered onto the substrate at a temperature of between about 200° C. and about 500° C., an RF power at a frequency of between about 5000 W and 6000 W, and a process chamber pressure of between about 50 mTorr and about 200 mTorr;

exposing the portion of the contact metal layer to a plasma treatment process; and

annealing the contact metal layer deposited on the substrate.

2. The method of claim 1 , wherein the performing a barrier layer deposition process comprises depositing a TiN barrier layer.

3. The method of claim 2 , wherein the TiN barrier layer is deposited to a thickness of between about 5 Å and about 75 Å.

4. The method of claim 1 , wherein the performing a wetting layer deposition process comprises depositing a non-oxidized Ti or TiN layer, a CVD Co layer, or a PVD Co layer.

5. The method of claim 4 , wherein the CVD Co layer is deposited by a thermal deposition process.

6. The method of claim 5 , wherein the substrate is heated to a temperature of between about 100° C. and about 200° C. during the thermal deposition process.

7. The method of claim 1 , wherein the performing a wetting layer deposition process comprises depositing a CVD TiN layer, a CVD Ru layer, an ALD TaN layer, and combinations thereof.

8. The method of claim 1 , wherein the wetting layer annealing process is performed at a temperature of between about 200° C. and about 500° C.

9. The method of claim 8 , wherein the wetting layer annealing process is performed for a duration of between about 30 seconds and about 90 seconds.

10. The method of claim 8 , wherein the wetting layer annealing process is performed in an argon containing chamber environment.

11. The method of claim 10 , wherein the chamber environment is purged after performing the wetting layer annealing process.

12. The method of claim 8 , wherein the wetting layer annealing process is performed in a hydrogen containing chamber environment.

13. The method of claim 1 , wherein the plasma treatment process comprises exposing the contact metal layer to a hydrogen containing plasma for a duration of between about 1 second and about 60 seconds.

14. The method of claim 13 , wherein the substrate is heated to a temperature of between about 100° C. and about 200° C. during the plasma treatment process to reduce surface roughness of the contact metal layer and to reduce the percentage of impurities in the contact metal layer.

15. The method of claim 1 , wherein the annealing the contact metal layer is performed at a temperature of between about 200° C. and about 500° C.

16. The method of claim 15 , wherein the annealing the contact metal layer is performed in an argon containing and a hydrogen containing chamber environment.

17. A method for depositing a contact metal layer for forming a contact structure in a semiconductor device, comprising:

performing a barrier layer deposition process to deposit a TiN barrier layer on a substrate;

performing a wetting layer deposition process to deposit a Co wetting layer on the TiN barrier layer;

performing an annealing process on the wetting layer;

performing a PVD metal deposition process to deposit a Co contact metal layer on the Co wetting layer by exposing the wetting layer to a process gas to deposit a portion of the contact metal layer on the substrate, wherein the performing the PVD metal deposition process comprises depositing a PVD Co layer, and the PVD Co layer is sputtered onto the substrate at a temperature of between about 200° C. and about 500° C., an RF power at a frequency of between about 5000 W and 6000 W, and a process chamber pressure of between about 50 mTorr and about 200 mTorr;

exposing the portion of the Co contact metal layer to a plasma treatment process; and

annealing the Co contact metal layer deposited on the substrate.

18. A method for depositing a contact metal layer for forming a contact structure in a semiconductor device, comprising:

performing a barrier layer deposition process to deposit a TiN barrier layer on a substrate;

performing a wetting layer thermal deposition process to thermally deposit a Co wetting layer on the TiN barrier layer;

performing an annealing process on the wetting layer, wherein the wetting layer annealing process is performed at a temperature of about 400° C.;

performing a metal deposition process to deposit a Co contact metal layer on the Co wetting layer by exposing the Co wetting layer to a deposition precursor gas mixture to deposit a portion of the Co contact metal layer on the substrate;

exposing the portion of the Co contact metal layer to a plasma treatment process, wherein the substrate is heated to a temperature of about 150° C. during the plasma treatment process; and

annealing the Co contact metal layer deposited on the substrate at a temperature of about 400° C.

19. The method of claim 1 , further comprising reflowing the PVD Co layer at a temperature of between about 200° C. and about 500° C.

20. The method of claim 17 , further comprising reflowing the PVD Co layer at a temperature of between about 200° C. and about 500° C.