Thin film transistor substrate and display apparatus using the same

1. A thin film transistor substrate comprising:

a substrate;

a blocking layer, a source electrode, and a drain electrode disposed on a same layer over the substrate;

an active layer disposed to overlap the blocking layer, the source electrode, and the drain electrode;

a gate insulation layer disposed over the active layer;

a first gate electrode disposed over the gate insulation layer;

an interlayer dielectric disposed over the first gate electrode;

a first connection electrode disposed over the interlayer dielectric and connected to the active layer and the source electrode through a first contact hole;

a second connection electrode disposed over the interlayer dielectric and connected to the active layer and the drain electrode through a second contact hole;

a planarization layer disposed over the first connection electrode and the second connection electrode; and

a pixel electrode disposed over the planarization layer and connected to the second connection electrode through a third contact hole.

2. The thin film transistor substrate of claim 1 , further comprising:

a thin film transistor area and a capacitor area; and

at least one capacitor formed in the capacitor area,

wherein the blocking layer, the source electrode, and the drain electrode are formed in the thin film transistor area.

3. The thin film transistor substrate of claim 1 , further comprising:

a first buffer layer disposed over the substrate; and

a second buffer layer disposed over the first buffer layer,

wherein the source electrode and the drain electrode are interposed between the first buffer layer and the second buffer layer.

4. The thin film transistor substrate of claim 1 ,

wherein the source electrode and the drain electrode are formed of a material which differs from the material of the blocking layer.

5. The thin film transistor substrate of claim 2 ,

wherein the at least one capacitor comprises a first capacitor electrode and a second capacitor electrode, and

wherein the second capacitor electrode and the first gate electrode are formed on a same layer.

6. The thin film transistor substrate of claim 5 ,

wherein the second capacitor electrode and the first gate electrode are formed of a same material.

7. The thin film transistor substrate of claim 5 ,

wherein the first capacitor electrode and the second capacitor electrode laterally overlap each other.

8. The thin film transistor substrate of claim 1 , further comprising:

a second gate electrode;

wherein the second gate electrode, the first connection electrode, and the second connection electrode are formed on a same layer, and

wherein the second gate electrode, the first connection electrode, and the second connection electrode are formed on the interlayer dielectric.

9. The thin film transistor substrate of claim 1 ,

wherein the first connection electrode and the second connection electrode each extend through the interlayer dielectric, the gate insulation layer, and the active layer and electrically connect to the source electrode and the drain electrode, respectively.

10. The thin film transistor substrate of claim 1 ,

wherein the first contact hole and the second contact hole each are in direct contact with the active layer.

11. The thin film transistor substrate of claim 1 ,

wherein the active layer comprises a first region having two first partial regions, the first partial regions having a first doping concentration, a second region having two second partial regions, the second partial regions having a second doping concentration being smaller than the first doping concentration, and a channel region,

wherein one second partial region is arranged adjacent to the channel region on one side of the channel region, and another second partial region is arranged adjacent to the channel region on an opposite side of the channel region,

wherein one first partial region is arranged adjacent to one second partial region on one side, and another first partial region is arranged adjacent to the other second partial region,

wherein the first connection electrode is electrically coupled with the one first partial region and with the source electrode, and

wherein the second connection electrode is electrically coupled with the other first partial region and with the drain electrode.

12. The thin film transistor substrate of claim 11 ,

wherein one first partial region laterally overlaps the source electrode, wherein the other first partial region laterally overlaps the drain electrode, and

wherein the channel region laterally overlaps the blocking layer.

13. A display apparatus, comprising:

a thin film transistor substrate; and

a further substrate arranged opposite the thin film transistor substrate,

wherein the thin film transistor substrate comprises:

a substrate;

a blocking layer, a source electrode, and a drain electrode disposed on a same layer over the substrate;

an active layer disposed to overlap the blocking layer, the source electrode, and the drain electrode;

a gate insulation layer disposed over the active layer;

a first gate electrode disposed over the gate insulation layer;

an interlayer dielectric disposed over the first gate electrode;

a first connection electrode disposed over the interlayer dielectric and connected to the active layer and the source electrode through a first contact hole;

a second connection electrode disposed over the interlayer dielectric and connected to the active layer and the drain electrode through a second contact hole;

a planarization layer disposed over the first connection electrode and the second connection electrode; and

a pixel electrode disposed over the planarization layer and connected to the second connection electrode through a third contact hole.

14. The display apparatus of claim 13 , further comprising:

a liquid crystal layer formed between the thin film transistor substrate and the further substrate.

15. A display apparatus, comprising:

a thin film transistor substrate; and

an organic layer structure configured to emit light,

wherein the organic layer structure is disposed over a pixel electrode and

wherein the thin film transistor substrate comprises:

a substrate;

a blocking layer, a source electrode, and a drain electrode disposed on a same layer over the substrate;

an active layer disposed to overlap the blocking layer, the source electrode, and the drain electrode;

a gate insulation layer disposed over the active layer;

a first gate electrode disposed over the gate insulation layer;

an interlayer dielectric disposed over the first gate electrode;

a first connection electrode disposed over the interlayer dielectric and connected to the active layer and the source electrode through a first contact hole;

a second connection electrode disposed over the interlayer dielectric and connected to the active layer and the drain electrode through a second contact hole;

a planarization layer disposed over the first connection electrode and the second connection electrode; and

a pixel electrode disposed over the planarization layer and connected to the second connection electrode through a third contact hole.