Multilayer magnetic storage element and storage device
A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.
1. A storage element comprising:
a storage layer having a magnetization state of a first magnetic material;
a fixed magnetization layer having a fixed magnetization state of a second magnetic material;
an interlayer including a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer;
a coercive force enhancement layer adjacent to the storage layer and opposite to the interlayer, the coercive force enhancement layer includes Cr and has a thickness from 0.03 nm to 0.3 nm;
a spin barrier layer including an oxide, the spin barrier layer adjacent to the coercive force enhancement layer and opposite to the storage layer; and
a ground layer, a magnetic coupling layer, and a high coercive force layer, wherein the magnetic coupling layer and the high coercive force layer are positioned between the fixed magnetization layer and the ground layer,
and the storage layer comprises at least 30% by atom of the first magnetic material, and the fixed magnetization layer comprises at least 30% by atom of the second magnetic material.
2. The storage element according to claim 1 , wherein the storage layer includes a ferromagnetic material.
3. The storage element according to claim 2 , wherein the ferromagnetic material includes Co, Fe, and B.
4. The storage element according to claim 1 , wherein the storage layer includes at least one of Fe, Co, and Ni as a main component.
5. The storage element according to claim 1 , wherein the spin barrier layer includes at least one of magnesium oxide, chromium oxide, barium oxide, aluminum oxide, and calcium oxide.
6. The storage element according to claim 1 , wherein each of the storage layer and the fixed magnetization layer has a magnetization substantially perpendicular to a reference layer surface.
7. The storage element according to claim 6 , wherein the reference layer surface is a top surface of at least one of the storage layer, the fixed magnetization layer, the coercive force enhancement layer and the spin barrier layer.
8. The storage element according to claim 1 , wherein the fixed magnetization layer includes Co, Fe, and B.
9. The storage element according to claim 1 , wherein the magnetization state of the first magnetic material is configured to be changed by a current.
10. The storage element according to claim 1 , wherein the storage layer and the fixed magnetization layer each comprise an alloy comprising at least one of Fe, Co, and Ni as a main component and 5-30% by atom of at least one of B and C.
11. A storage device comprising:
a storage element that stores information associated with a magnetization state of a first magnetic material; and
two types of lines that intersect with each other,
wherein the storage element is interposed between the two types of lines, and the storage element includes
a storage layer having the magnetization state of the first magnetic material;
a fixed magnetization layer having a fixed magnetization state of a second magnetic material;
an interlayer including a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer;
a coercive force enhancement layer adjacent to the storage layer and opposite to the interlayer, the coercive force enhancement layer includes Cr and has a thickness from 0.03 nm to 0.3 nm;
a spin barrier layer including an oxide, the spin barrier layer adjacent to the coercive force enhancement layer and opposite to the storage layer; and
a ground layer, a magnetic coupling layer, and a high coercive force layer, wherein the magnetic coupling layer and the high coercive force layer are positioned between the fixed magnetization layer and the ground layer,
and the storage layer comprises at least 30% by atom of the first magnetic material, and the fixed magnetization layer comprises at least 30% by atom of the second magnetic material.
12. The storage device according to claim 11 , wherein the storage layer includes a ferromagnetic material.
13. The storage device according to claim 12 , wherein the ferromagnetic material includes Co, Fe, and B.
14. The storage device according to claim 11 , wherein the storage layer includes at least one of Fe, Co, and Ni as a main component.
15. The storage device according to claim 11 , wherein the spin barrier layer includes at least one of magnesium oxide, chromium oxide, barium oxide, aluminum oxide, and calcium oxide.
16. The storage device according to claim 11 , wherein each of the storage layer and the fixed magnetization layer has a magnetization substantially perpendicular to a reference layer surface.
17. The storage device according to claim 16 , wherein the reference layer surface is a top surface of at least one of the storage layer, the fixed magnetization layer, the coercive force enhancement layer and the spin barrier layer.
18. The storage device according to claim 11 , wherein the fixed magnetization layer includes Co, Fe, and B.
19. The storage device according to claim 11 , wherein the magnetization state of the first magnetic material is configured to be changed by a current.